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Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4634474 Coating of III-V and II-VI compound semiconductors Jan. 6, 1987
4627991 Method for forming a protective film on a semiconductor body Dec. 9, 1986
4622236 Boron nitride film and process for preparing same Nov. 11, 1986
4615766 Silicon cap for annealing gallium arsenide Oct. 7, 1986
4608097 Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer Aug. 26, 1986
4608096 Gettering Aug. 26, 1986
4608095 Gettering Aug. 26, 1986
4597825 Intermediate passivation and cleaning of compound semiconductor surfaces Jul. 1, 1986
4589006 Germanium detector passivated with hydrogenated amorphous germanium May. 13, 1986
4585489 Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer Apr. 29, 1986
4567503 MIS Device employing elemental pnictide or polyphosphide insulating layers Jan. 28, 1986
4565741 Boron nitride film and process for preparing same Jan. 21, 1986
4560642 Method of manufacturing a semiconductor device Dec. 24, 1985
4558340 Thin film field effect transistors utilizing a polypnictide semiconductor Dec. 10, 1985
4532150 Method for providing a coating layer of silicon carbide on the surface of a substrate Jul. 30, 1985
4529685 Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating Jul. 16, 1985
4513057 Process for forming sulfide layers Apr. 23, 1985
4510172 Technique for thin insulator growth Apr. 9, 1985
4509066 Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom Apr. 2, 1985
4494997 Ion implant mask and cap for gallium arsenide structures Jan. 22, 1985
4489103 SIPOS Deposition method Dec. 18, 1984
4473597 Method and structure for passivating a PN junction Sep. 25, 1984
4472206 Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing Sep. 18, 1984
4453172 Field effect transistor with gate insulation of cubic fluoride material Jun. 5, 1984
4447469 Process for forming sulfide layers by photochemical vapor deposition May. 8, 1984
4433469 Method of forming a self aligned aluminum polycrystalline silicon line Feb. 28, 1984
4434224 Method of pattern formation Feb. 28, 1984
4420765 Multi-layer passivant system Dec. 13, 1983
4406053 Process for manufacturing a semiconductor device having a non-porous passivation layer Sep. 27, 1983
4380773 Self aligned aluminum polycrystalline silicon contact Apr. 19, 1983
4363828 Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas Dec. 14, 1982
4356041 Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer Oct. 26, 1982
4351894 Method of manufacturing a semiconductor device using silicon carbide mask Sep. 28, 1982
4350541 Doping from a photoresist layer Sep. 21, 1982
4344985 Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer Aug. 17, 1982
4339285 Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation Jul. 13, 1982
4332837 Passivation process and structure for self-alignment with the location of a mask Jun. 1, 1982
4331709 Process of reducing density of fast surface states in MOS devices May. 25, 1982
4320178 Structure of the insulator--semiconductor type Mar. 16, 1982
4320191 Pattern-forming process Mar. 16, 1982
4297783 Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer Nov. 3, 1981
4276368 Photoinduced migration of silver into chalcogenide layer Jun. 30, 1981
4242697 Dielectrically isolated high voltage semiconductor devices Dec. 30, 1980
4231050 Reduction of surface recombination current in GaAs devices Oct. 28, 1980
4229474 Breakage resistant V-grooved <100> silicon substrates Oct. 21, 1980
4224636 Semiconductor device with thermally compensating SiO.sub.2 -silicate glass-SiC passivation layer Sep. 23, 1980
4207586 Semiconductor device having a passivating layer Jun. 10, 1980
4199384 Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands Apr. 22, 1980
4194934 Method of passivating a semiconductor device utilizing dual polycrystalline layers Mar. 25, 1980
4189826 Silicon charge-handling device employing SiC electrodes Feb. 26, 1980

1 2 3 4 5 6 7










 
 
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