Resources Contact Us Home
Browse by Category: Main > Physics
Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
5229332 Method for the growth of epitaxial metal-insulator-metal-semiconductor structures Jul. 20, 1993
5229333 Method for improving the interface characteristics of CaF.sub.2 on silicon Jul. 20, 1993
5196370 Method of manufacturing an arsenic-including compound semiconductor device Mar. 23, 1993
5177031 Method of passivating etched mirror facets of semiconductor laser diodes Jan. 5, 1993
5171706 Method for the production of a semiconductor laser device Dec. 15, 1992
5116767 Semiconductor laser passivation and overstressing May. 26, 1992
5086321 Unpinned oxide-compound semiconductor structures and method of forming same Feb. 4, 1992
5070035 Method for producing a III-V compound semiconductor device with a phosphoric oxide insulating layer Dec. 3, 1991
5039626 Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material Aug. 13, 1991
5032472 Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them Jul. 16, 1991
5017403 Process for forming planarized films May. 21, 1991
4997482 Coating composition containing hydrolyzed silicate esters and other metal oxide precursors Mar. 5, 1991
4996081 Method of forming multiple nitride coating on silicon Feb. 26, 1991
4994140 Method capable of forming a fine pattern without crystal defects Feb. 19, 1991
4987095 Method of making unpinned oxide-compound semiconductor structures Jan. 22, 1991
4935382 Method of making a semiconductor-insulator-semiconductor structure Jun. 19, 1990
4920078 Arsenic sulfide surface passivation of III-V semiconductors Apr. 24, 1990
4914059 Process for the heat flash vapour phase deposition of an insulating layer on a III-V material substrate and its application to the production of a MIS structure Apr. 3, 1990
4901133 Multilayer semi-insulating film for hermetic wafer passivation and method for making same Feb. 13, 1990
4878956 Single crystal films of cubic group II fluorides on semiconductor compounds Nov. 7, 1989
4871692 Passivation of group III-V surfaces Oct. 3, 1989
4870032 Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy Sep. 26, 1989
4865656 Process for surface passivation of an indium phosphide substrate and product obtained Sep. 12, 1989
4849296 Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia Jul. 18, 1989
4847162 Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia Jul. 11, 1989
4843037 Passivation of indium gallium arsenide surfaces Jun. 27, 1989
4842888 Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors Jun. 27, 1989
4828935 Passivating layer for III-V semiconductor materials May. 9, 1989
4811077 Compound semiconductor surface termination Mar. 7, 1989
4803528 Insulating film having electrically conducting portions Feb. 7, 1989
4792832 Superlattice semiconductor having high carrier density Dec. 20, 1988
4783361 Coated lenses Nov. 8, 1988
4778776 Passivation with a low oxygen interface Oct. 18, 1988
4770940 Glow discharge method of applying a carbon coating onto a substrate and coating applied thereby Sep. 13, 1988
4761300 Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer Aug. 2, 1988
4756977 Multilayer ceramics from hydrogen silsesquioxane Jul. 12, 1988
4753856 Multilayer ceramic coatings from silicate esters and metal oxides Jun. 28, 1988
4751201 Passivation of gallium arsenide devices with sodium sulfide Jun. 14, 1988
4751200 Passivation of gallium arsenide surfaces with sodium sulfide Jun. 14, 1988
4743949 Infrared optical-electronic device May. 10, 1988
4742384 Structure for passivating a PN junction May. 3, 1988
4732659 Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor Mar. 22, 1988
4717681 Method of making a heterojunction bipolar transistor with SIPOS Jan. 5, 1988
4714518 Dual layer encapsulation coating for III-V semiconductor compounds Dec. 22, 1987
4696828 Passivation of InP by plasma deposited phosphorus Sep. 29, 1987
4695857 Superlattice semiconductor having high carrier density Sep. 22, 1987
4678266 Use of pnictide films for wave-guiding in opto-electronic devices Jul. 7, 1987
4663183 Glow discharge method of applying a carbon coating onto a substrate May. 5, 1987
4647472 Process of producing a semiconductor device Mar. 3, 1987
4637129 Selective area III-V growth and lift-off using tungsten patterning Jan. 20, 1987

1 2 3 4 5 6 7

  Recently Added Patents
Cabinet door with tread pattern
Expression of dirigent gene EG261 and its orthologs and paralogs enhances pathogen resistance in plants
Apparatus and method for image encoding/decoding using predictability of intra-prediction mode
3D IC method and device
Method and a system for registering a 3D pre-acquired image coordinates system with a medical positioning system coordinate system and with a 2D image coordinate system
Solid state lighting circuit and controls
Ventilated vacuum communication structure
  Randomly Featured Patents
Computer generated hologram
Hand-held self defense device
Vertical rack spline forming machine
Curable resin composition, coating composition, coating method and coated article
Method for making a turbine blade having a wear resistant layer sintered to the blade tip surface
Flash memory with recessed floating gate
Feed unit for moving parts
Method for simplifying tie net modeling for router performance
Apparatus for coupling a pair of elongate slide fastener stringers
Automatic calibration of a rotary head switching signal