Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Browse by Category: Main > Physics
Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
5670431 Method of forming an ultra thin dielectric film for a capacitor Sep. 23, 1997
5670248 Material consisting of chemical compounds, comprising a metal from group IV A of the periodic system, nitrogen and oxygen, and process for its preparation Sep. 23, 1997
5650646 Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer Jul. 22, 1997
5648114 Chemical vapor deposition process for fabricating layered superlattice materials Jul. 15, 1997
5629043 Silicon nitride film formation method May. 13, 1997
5624707 Method of forming ABO.sub.3 films with excess B-site modifiers Apr. 29, 1997
5622902 Passivation/patterning of PZR diamond films for high temperature operability Apr. 22, 1997
5620739 Thin film capacitors on gallium arsenide substrate and process for making the same Apr. 15, 1997
5614018 Integrated circuit capacitors and process for making the same Mar. 25, 1997
5614252 Method of fabricating barium strontium titanate Mar. 25, 1997
5612082 Process for making metal oxides Mar. 18, 1997
5602056 Method for forming reliable MOS devices using silicon rich plasma oxide film Feb. 11, 1997
5599748 Method of passivating group III-V surfaces Feb. 4, 1997
5580828 Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material Dec. 3, 1996
5561076 Method of fabricating an isolation region for a semiconductor device using liquid phase deposition Oct. 1, 1996
5559260 Precursors and processes for making metal oxides Sep. 24, 1996
5540772 Misted deposition apparatus for fabricating an integrated circuit Jul. 30, 1996
5539248 Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) Jul. 23, 1996
5519234 Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current May. 21, 1996
5516363 Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors May. 14, 1996
5514822 Precursors and processes for making metal oxides May. 7, 1996
5508226 Low temperature process for fabricating layered superlattice materialsand making electronic devices including same Apr. 16, 1996
5497024 GaAs MIS device Mar. 5, 1996
5492865 Method of making structure for suppression of field inversion caused by charge build-up in the dielectric Feb. 20, 1996
5481135 Hermetic protection for integrated circuits Jan. 2, 1996
5472902 Silicon-on-insulator isolation technology using liquid phase deposition Dec. 5, 1995
5468685 Method for producing a semiconductor integrated circuit Nov. 21, 1995
5468684 Integrated circuit with layered superlattice material and method of fabricating same Nov. 21, 1995
5468679 Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications Nov. 21, 1995
5456945 Method and apparatus for material deposition Oct. 10, 1995
5453406 Aspect ratio independent coating for semiconductor planarization using SOG Sep. 26, 1995
5451542 Surface passivation process of compound semiconductor material using UV photosulfidation Sep. 19, 1995
5439845 Process for fabricating layered superlattice materials and making electronic devices including same Aug. 8, 1995
5434102 Process for fabricating layered superlattice materials and making electronic devices including same Jul. 18, 1995
5423285 Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications Jun. 13, 1995
5407869 Method of passivating group III-V surfaces Apr. 18, 1995
5395774 Methods for forming a transistor having an emitter with enhanced efficiency Mar. 7, 1995
5393352 Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer Feb. 28, 1995
5374833 Structure for suppression of field inversion caused by charge build-up in the dielectric Dec. 20, 1994
5364468 Method for the growth of epitaxial metal-insulator-metal-semiconductor structures Nov. 15, 1994
5352917 Electronic device provided with metal fluoride film Oct. 4, 1994
5346855 Method of making an INP-based DFB laser Sep. 13, 1994
5318928 Method for the surface passivation of sensors using an in situ sputter cleaning step prior to passivation film deposition Jun. 7, 1994
5314839 Solid state device fabrication method including a surface treatment step with a neutral particle beam with an energy between 10ev and 100ev May. 24, 1994
5300320 Chemical vapor deposition from single organometallic precursors Apr. 5, 1994
5290727 Method for suppressing charge loss in EEPROMs/EPROMS and instabilities in SRAM load resistors Mar. 1, 1994
5266830 Hetero junction bipolar transistor with reduced surface recombination current Nov. 30, 1993
5264379 Method of making a hetero-junction bipolar transistor Nov. 23, 1993
5250451 Process for the production of thin film transistors Oct. 5, 1993
5247349 Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure Sep. 21, 1993

1 2 3 4 5 6 7










 
 
  Recently Added Patents
Stevia formulation
Broadband optical network apparatus and method
Color image forming apparatus with contact control of process units
Method and system for expanding axial coverage in iterative reconstruction in computer tomography (CT)
Wire catalyst for hydrogenation/dehydrogenation reaction and manufacturing method therefor
Ventilated vacuum communication structure
Structural plasticity in spiking neural networks with symmetric dual of an electronic neuron
  Randomly Featured Patents
Security device for wallets, billfolds and the like
Magnetic clutch housing
Umbrella shaft with five telescopic segments
Dispensing apparatus
Process for heat treating shaped articles of poly {[benzo(1,2-d:4,5-d')bisthiazole-2,6-diyl]-1,4-phenylene}, its cis isomer or mixtures thereof
Electromagnetic flow control valve assembly
Double master mask process for integrated circuit manufacture
Fastener insertion apparatus
Raiser used in stacked gigabyte interface converter guide rail assembly for removable optoelectronic modules
Lawn chair