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Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6365527 Method for depositing silicon carbide in semiconductor devices Apr. 2, 2002
6358316 Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure Mar. 19, 2002
6355574 Method and device for treating a semiconductor surface Mar. 12, 2002
6346488 Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation Feb. 12, 2002
6306212 Gallium arsenide semiconductor devices fabricated with insulator layer Oct. 23, 2001
6277764 Interlayered dielectric layer of semiconductor device and method of manufacturing the same Aug. 21, 2001
6262445 SiC sidewall process Jul. 17, 2001
6255156 Method for forming porous silicon dioxide insulators and related structures Jul. 3, 2001
6255211 Silicon carbide stop layer in chemical mechanical polishing over metallization layers Jul. 3, 2001
6251770 Dual-damascene dielectric structures and methods for making the same Jun. 26, 2001
6252295 Adhesion of silicon carbide films Jun. 26, 2001
6228672 Stable surface passivation process for compound semiconductors May. 8, 2001
6208001 Gallium arsenide semiconductor devices fabricated with insulator layer Mar. 27, 2001
6184572 Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices Feb. 6, 2001
6171951 Dual damascene method comprising ion implanting to densify dielectric layer and forming a hard mask layer with a tapered opening Jan. 9, 2001
6163066 Porous silicon dioxide insulator Dec. 19, 2000
6150258 Plasma deposited fluorinated amorphous carbon films Nov. 21, 2000
6133148 Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method Oct. 17, 2000
6071780 Compound semiconductor apparatus and method for manufacturing the apparatus Jun. 6, 2000
6060384 Borderless vias with HSQ gap filled patterned metal layers May. 9, 2000
6043167 Method for forming low dielectric constant insulating film Mar. 28, 2000
6004622 Spin-on-glass process with controlled environment Dec. 21, 1999
5989998 Method of forming interlayer insulating film Nov. 23, 1999
5979306 Heating pressure processing apparatus Nov. 9, 1999
5966613 Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective Oct. 12, 1999
5960252 Method for manufacturing a semiconductor memory device having a ferroelectric capacitor Sep. 28, 1999
5955754 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same Sep. 21, 1999
5932006 BaF.sub.2 /GaAs electronic components Aug. 3, 1999
5920105 Compound semiconductor field effect transistor having an amorphous gas gate insulation layer Jul. 6, 1999
5916631 Method and apparatus for spin-coating chemicals Jun. 29, 1999
5912486 Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer Jun. 15, 1999
5908661 Apparatus and method for spin coating substrates Jun. 1, 1999
5866945 Borderless vias with HSQ gap filled patterned metal layers Feb. 2, 1999
5861658 Inorganic seal for encapsulation of an organic layer and method for making the same Jan. 19, 1999
5854141 Inorganic seal for encapsulation of an organic layer and method for making the same Dec. 29, 1998
5838530 Applications of protective ceramics Nov. 17, 1998
5825057 Process for fabricating layered superlattice materials and making electronic devices including same Oct. 20, 1998
5801092 Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices Sep. 1, 1998
5796127 High electron mobility transistor Aug. 18, 1998
5779925 Plasma processing with less damage Jul. 14, 1998
5776556 Method for depositing thin layers of a material consisting of chemical compounds comprising a metal from group IV of the periodic system, nitrogen and oxygen onto heatable substrates Jul. 7, 1998
5773351 Isolation layer of semiconductor device and method for fabricating the same Jun. 30, 1998
5759923 Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits Jun. 2, 1998
5753040 Method for the growth of epitaxial metal-insulator-metal-semiconductor structures May. 19, 1998
5750898 Passivation/patterning of PZR diamond films for high temperature transducer operability May. 12, 1998
5738721 Liquid precursor and method for forming a cubic-phase passivating/buffer film Apr. 14, 1998
5723361 Thin films of ABO.sub.3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same Mar. 3, 1998
5716673 Spin-on-glass process with controlled environment Feb. 10, 1998
5703407 Resin-sealed type semiconductor device Dec. 30, 1997
5672252 Method and apparatus for fabrication of dielectric film Sep. 30, 1997

1 2 3 4 5 6 7










 
 
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