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Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6926926 Silicon carbide deposited by high density plasma chemical-vapor deposition with bias Aug. 9, 2005
6927178 Nitrogen-free dielectric anti-reflective coating and hardmask Aug. 9, 2005
6924240 Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device Aug. 2, 2005
6909190 Dual-damascene dielectric structures Jun. 21, 2005
6900481 Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors May. 31, 2005
6855484 Method of depositing low dielectric constant silicon carbide layers Feb. 15, 2005
6852373 Method for depositing a silicon-containing dielectric material on copper Feb. 8, 2005
6821571 Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers Nov. 23, 2004
6812167 Method for improving adhesion between dielectric material layers Nov. 2, 2004
6794311 Method and apparatus for treating low k dielectric layers to reduce diffusion Sep. 21, 2004
6786974 Insulating film forming method and insulating film forming apparatus Sep. 7, 2004
6784119 Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition Aug. 31, 2004
6781237 Wiring-inclusive structure and forming method thereof Aug. 24, 2004
6777349 Hermetic silicon carbide Aug. 17, 2004
6777171 Fluorine-containing layers for damascene structures Aug. 17, 2004
6767836 Method of cleaning a CVD reaction chamber using an active oxygen species Jul. 27, 2004
6764952 Systems and methods to retard copper diffusion and improve film adhesion for a dielectric barrier on copper Jul. 20, 2004
6764927 Chemical vapor deposition (CVD) method employing wetting pre-treatment Jul. 20, 2004
6764939 Semiconductor device and method of manufacturing the same Jul. 20, 2004
6764958 Method of depositing dielectric films Jul. 20, 2004
6759327 Method of depositing low k barrier layers Jul. 6, 2004
6756306 Low temperature dielectric deposition to improve copper electromigration performance Jun. 29, 2004
6750126 Methods for sputter deposition of high-k dielectric films Jun. 15, 2004
6730591 Method of using silicon rich carbide as a barrier material for fluorinated materials May. 4, 2004
6716765 Plasma clean for a semiconductor thin film deposition chamber Apr. 6, 2004
6713390 Barrier layer deposition using HDP-CVD Mar. 30, 2004
6693046 Method of manufacturing semiconductor device having multilevel wiring Feb. 17, 2004
6683002 Method to create a copper diffusion deterrent interface Jan. 27, 2004
6635583 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating Oct. 21, 2003
6630396 Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon Oct. 7, 2003
6614096 Method for manufacturing a semiconductor device and a semiconductor device Sep. 2, 2003
6597033 Semiconductor memory device and manufacturing method thereof Jul. 22, 2003
6593653 Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications Jul. 15, 2003
6589888 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers Jul. 8, 2003
6573191 Insulating film forming method and insulating film forming apparatus Jun. 3, 2003
6562725 Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers May. 13, 2003
6558756 Method of forming interlayer insulating film May. 6, 2003
6544901 Plasma thin-film deposition method Apr. 8, 2003
6541369 Method and apparatus for reducing fixed charges in a semiconductor device Apr. 1, 2003
6537733 Method of depositing low dielectric constant silicon carbide layers Mar. 25, 2003
6521300 Method of a surface treatment in improving adhesion of an organic polymeric low-k dielectric layer Feb. 18, 2003
6503843 Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill Jan. 7, 2003
6489238 Method to reduce photoresist contamination from silicon carbide films Dec. 3, 2002
6465366 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers Oct. 15, 2002
6444568 Method of forming a copper diffusion barrier Sep. 3, 2002
6436824 Low dielectric constant materials for copper damascene Aug. 20, 2002
6429129 Method of using silicon rich carbide as a barrier material for fluorinated materials Aug. 6, 2002
6399489 Barrier layer deposition using HDP-CVD Jun. 4, 2002
6376048 Lamination structure, wiring structure, manufacture thereof, and semiconductor device Apr. 23, 2002

1 2 3 4 5 6 7

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