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Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8637396 Dielectric barrier deposition using oxygen containing precursor Jan. 28, 2014
8633116 Dry etching method Jan. 21, 2014
8633119 Methods for manufacturing high dielectric constant films Jan. 21, 2014
8580697 CVD flowable gap fill Nov. 12, 2013
8546262 Solid-state image pickup device, method of manufacturing the same and electronic apparatus Oct. 1, 2013
8541854 Method of minimizing beam bending of MEMS device by reducing the interfacial bonding strength between sacrificial layer and MEMS structure Sep. 24, 2013
8536073 Hardmask materials Sep. 17, 2013
8492292 Methods of forming oxide layers on substrates Jul. 23, 2013
8486831 Semiconductor device manufacturing method Jul. 16, 2013
8440566 Method for forming an aluminum nitride thin film May. 14, 2013
8435428 Methods for forming a ruthenium-based film on a substrate May. 7, 2013
8420208 High-k dielectric material and methods of forming the high-k dielectric material Apr. 16, 2013
8269317 Phosphorescent materials Sep. 18, 2012
8247332 Hardmask materials Aug. 21, 2012
8222635 Method for manufacturing an organic light emitting device as well as such a device Jul. 17, 2012
8222705 Solid-state image pickup device, method of manufacturing the same and electronic apparatus Jul. 17, 2012
8163584 Method of minimizing beam bending of MEMS device by reducing the interfacial bonding strength between sacrificial layer and MEMS structure Apr. 24, 2012
8133768 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system Mar. 13, 2012
8063452 Semiconductor device and method for manufacturing the same Nov. 22, 2011
8030139 Thin film transistor and method of producing thin film transistor Oct. 4, 2011
7972980 Method of forming conformal dielectric film having Si-N bonds by PECVD Jul. 5, 2011
7939453 Method for manufacturing organic transistor and organic transistor May. 10, 2011
7923383 Method and apparatus for treating a semi-conductor substrate Apr. 12, 2011
7919416 Method of forming conformal dielectric film having Si-N bonds by PECVD Apr. 5, 2011
7902001 Method of fabricating thin film device Mar. 8, 2011
7855121 Method of forming organic thin film and method of manufacturing semiconductor device using the same Dec. 21, 2010
7759205 Methods for fabricating semiconductor devices minimizing under-oxide regrowth Jul. 20, 2010
7754503 Method for producing semiconductor device and semiconductor producing apparatus Jul. 13, 2010
7674728 Deposition from liquid sources Mar. 9, 2010
7662711 Method of forming dual damascene pattern Feb. 16, 2010
7659475 Method for backside surface passivation of solar cells and solar cells with such passivation Feb. 9, 2010
7638382 Storage apparatus and manufacturing method thereof Dec. 29, 2009
7633125 Integration of silicon boron nitride in high voltage and small pitch semiconductors Dec. 15, 2009
7550808 Fully siliciding regions to improve performance Jun. 23, 2009
7517818 Method for forming a nitrided germanium-containing layer using plasma processing Apr. 14, 2009
7449372 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device Nov. 11, 2008
7074708 Method of decreasing the k value in sioc layer deposited by chemical vapor deposition Jul. 11, 2006
7064048 Method of forming a semi-insulating region Jun. 20, 2006
7060605 Methods for making dual-damascene dielectric structures Jun. 13, 2006
7060323 Method of forming interlayer insulating film Jun. 13, 2006
7029605 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device Apr. 18, 2006
7005363 Method of forming a semi-insulating region Feb. 28, 2006
7001850 Method of depositing dielectric films Feb. 21, 2006
6987321 Copper diffusion deterrent interface Jan. 17, 2006
6974766 In situ deposition of a low .kappa. dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application Dec. 13, 2005
6964879 Method of fabricating a contact Nov. 15, 2005
6965850 Methods for modulating nuclear receptor coactivator binding Nov. 15, 2005
6951826 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating Oct. 4, 2005
6949829 Semiconductor device and fabrication method therefor Sep. 27, 2005
6936901 Semiconductor device and method for manufacturing same Aug. 30, 2005

1 2 3 4 5 6 7










 
 
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