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Class Information
Number: 257/E21.256
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Etching insulating layer by chemical or physical means (epo) > Etching organic layer (epo) > By chemical means (epo) > By dry-etching (epo)
Description: This subclass is indented under subclass E21.255. This subclass is substantially the same in scope as ECLA classification H01L21/311C2B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7419902 |
Method of manufacture of semiconductor integrated circuit |
Sep. 2, 2008 |
| 7416973 |
Method of increasing the etch selectivity in a contact structure of semiconductor devices |
Aug. 26, 2008 |
| 7413963 |
Method of edge bevel rinse |
Aug. 19, 2008 |
| 7381622 |
Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process |
Jun. 3, 2008 |
| 7344927 |
Method and apparatus for manufacturing active matrix device including top gate type TFT |
Mar. 18, 2008 |
| 7344993 |
Low-pressure removal of photoresist and etch residue |
Mar. 18, 2008 |
| 7341935 |
Alternative interconnect structure for semiconductor devices |
Mar. 11, 2008 |
| 7326653 |
Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained |
Feb. 5, 2008 |
| 7276448 |
Method for an integrated circuit contact |
Oct. 2, 2007 |
| 7273817 |
Conditioning of a reaction chamber |
Sep. 25, 2007 |
| 7235479 |
Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials |
Jun. 26, 2007 |
| 7232763 |
Method of manufacturing semiconductor device |
Jun. 19, 2007 |
| 7232768 |
Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials |
Jun. 19, 2007 |
| 7208407 |
Flash memory cells with reduced distances between cell elements |
Apr. 24, 2007 |
| 7179751 |
Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials |
Feb. 20, 2007 |
| 7179752 |
Dry etching method |
Feb. 20, 2007 |
| 7067441 |
Damage-free resist removal process for ultra-low-k processing |
Jun. 27, 2006 |
| 7060628 |
Method for fabricating a hard mask polysilicon gate |
Jun. 13, 2006 |
| 7051741 |
Reduction/oxidation material removal method |
May. 30, 2006 |
| 7049052 |
Method providing an improved bi-layer photoresist pattern |
May. 23, 2006 |
| 7049242 |
Post high voltage gate dielectric pattern plasma surface treatment |
May. 23, 2006 |
| 7049221 |
Method for manufacturing a semiconductor device having a multilayer interconnection structure |
May. 23, 2006 |
| 7042049 |
Composite etching stop in semiconductor process integration |
May. 9, 2006 |
| 7042091 |
Fluorinated hard mask for micropatterning of polymers |
May. 9, 2006 |
| 7030027 |
Etching methods and apparatus for producing semiconductor devices |
Apr. 18, 2006 |
| 7030026 |
Semiconductor device fabrication method |
Apr. 18, 2006 |
| 7030009 |
Method for forming metal interconnect in a carbon containing silicon oxide film |
Apr. 18, 2006 |
| 7030007 |
Via-filling material and process for fabricating semiconductor integrated circuit using the material |
Apr. 18, 2006 |
| 7030028 |
Etching method |
Apr. 18, 2006 |
| 7026252 |
Etching aftertreatment method |
Apr. 11, 2006 |
| 7018780 |
Methods for controlling and reducing profile variation in photoresist trimming |
Mar. 28, 2006 |
| 7018928 |
Plasma treatment method to reduce silicon erosion over HDI silicon regions |
Mar. 28, 2006 |
| 7014787 |
Etching method of organic insulating film |
Mar. 21, 2006 |
| 7012051 |
Inhibition of titanium corrosion |
Mar. 14, 2006 |
| 7011868 |
Fluorine-free plasma curing process for porous low-k materials |
Mar. 14, 2006 |
| 7008808 |
Method of manufacturing LCOS spacers |
Mar. 7, 2006 |
| 7008803 |
Method of reworking structures incorporating low-k dielectric materials |
Mar. 7, 2006 |
| 7005385 |
Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring |
Feb. 28, 2006 |
| 7001529 |
Pre-endpoint techniques in photoresist etching |
Feb. 21, 2006 |
| 7001692 |
Method of forming a mask having nitride film |
Feb. 21, 2006 |
| 6998348 |
Method for manufacturing electronic circuits integrated on a semiconductor substrate |
Feb. 14, 2006 |
| 6995096 |
Method for forming multi-layer wiring structure |
Feb. 7, 2006 |
| 6991739 |
Method of photoresist removal in the presence of a dielectric layer having a low k-value |
Jan. 31, 2006 |
| 6979655 |
Substrate processing method and substrate processing apparatus |
Dec. 27, 2005 |
| 6977230 |
Methods of removing material from a semiconductor substrate |
Dec. 20, 2005 |
| 6977229 |
Manufacturing method for semiconductor devices |
Dec. 20, 2005 |
| 6972453 |
Method of manufacturing a semiconductor device capable of etching a multi-layer of organic films at a high selectivity |
Dec. 6, 2005 |
| 6972258 |
Method for selectively controlling damascene CD bias |
Dec. 6, 2005 |
| 6969685 |
Etching a dielectric layer in an integrated circuit structure having a metal hard mask layer |
Nov. 29, 2005 |
| 6967173 |
Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials |
Nov. 22, 2005 |
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