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Class Information
Number: 257/E21.252
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Etching insulating layer by chemical or physical means (epo) > Etching inorganic layer (epo) > By chemical means (epo) > By dry-etching (epo)
Description: This subclass is indented under subclass E21.251. This subclass is substantially the same in scope as ECLA classification H01L21/311B2B.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.253 Of layers not containing si, e.g., pzt, al 2 o 3 (epo) 113


Patents under this class:

Patent Number Title Of Patent Date Issued
7618887 Semiconductor device with a metal line and method of forming the same Nov. 17, 2009
7615480 Methods of post-contact back end of the line through-hole via integration Nov. 10, 2009
7601641 Two step optical planarizing layer etch Oct. 13, 2009
7592267 Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same Sep. 22, 2009
7589006 Method for manufacturing semiconductor device Sep. 15, 2009
7585685 Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants Sep. 8, 2009
7579250 Method for reducing hot carrier effect of MOS transistor Aug. 25, 2009
7572694 Method of manufacturing a semiconductor device Aug. 11, 2009
7569484 Plasma and electron beam etching device and method Aug. 4, 2009
7566664 Selective etching of MEMS using gaseous halides and reactive co-etchants Jul. 28, 2009
7566658 Method for fabricating a metal interconnection using a dual damascene process and resulting semiconductor device Jul. 28, 2009
7566644 Method for forming gate electrode of semiconductor device Jul. 28, 2009
7560378 Method for manufacturing semiconductor device Jul. 14, 2009
7557045 Manufacture of semiconductor device with good contact holes Jul. 7, 2009
7553679 Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current Jun. 30, 2009
7547560 Defect identification system and method for repairing killer defects in semiconductor devices Jun. 16, 2009
7544625 Silicon oxide thin-films with embedded nanocrystalline silicon Jun. 9, 2009
7537987 Semiconductor device manufacturing method May. 26, 2009
7534363 Method for providing uniform removal of organic material May. 19, 2009
7528074 Method of manufacturing a semiconductor device and method of etching an insulating film May. 5, 2009
7507651 Method for fabricating semiconductor device with bulb shaped recess gate pattern Mar. 24, 2009
7504643 Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement Mar. 17, 2009
7504040 Plasma processing apparatus and plasma processing method Mar. 17, 2009
7501353 Method of formation of a damascene structure utilizing a protective film Mar. 10, 2009
7495239 Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement Feb. 24, 2009
7488687 Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers Feb. 10, 2009
7485963 Use of supercritical fluid for low effective dielectric constant metallization Feb. 3, 2009
7476610 Removable spacer Jan. 13, 2009
7476609 Forming of a cavity in an insulating layer Jan. 13, 2009
7473646 Dry etching method and production method of magnetic memory device Jan. 6, 2009
7452822 Via plug formation in dual damascene process Nov. 18, 2008
7442649 Etch with photoresist mask Oct. 28, 2008
7423307 CMOS image sensor and method for fabricating the same Sep. 9, 2008
7419847 Method for forming metal interconnection of semiconductor device Sep. 2, 2008
7416988 Semiconductor device and fabrication process thereof Aug. 26, 2008
7416973 Method of increasing the etch selectivity in a contact structure of semiconductor devices Aug. 26, 2008
7413963 Method of edge bevel rinse Aug. 19, 2008
7413960 Method of forming floating gate electrode in flash memory device Aug. 19, 2008
7387738 Removal of surface oxides by electron attachment for wafer bumping applications Jun. 17, 2008
7384846 Method of fabricating semiconductor device Jun. 10, 2008
7381622 Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process Jun. 3, 2008
7354867 Etch process for improving yield of dielectric contacts on nickel silicides Apr. 8, 2008
7352064 Multiple layer resist scheme implementing etch recipe particular to each layer Apr. 1, 2008
7351643 Method of manufacturing a semiconductor device Apr. 1, 2008
7338903 Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer Mar. 4, 2008
7303952 Method for fabricating doped polysilicon lines Dec. 4, 2007
7282441 De-fluorination after via etch to preserve passivation Oct. 16, 2007
7268397 Thermal dissipation structures for finfets Sep. 11, 2007
7265042 Method for fabricating semiconductor device with gate spacer Sep. 4, 2007
7253116 High ion energy and reative species partial pressure plasma ash process Aug. 7, 2007



 
 
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