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Class Information
Number: 257/E21.25
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Etching insulating layer by chemical or physical means (epo) > Etching inorganic layer (epo)
Description: This subclass is indented under subclass E21.249. This subclass is substantially the same in scope as ECLA classification H01L21/311B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.251 By chemical means (epo) 554


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
6022485 Method for controlled removal of material from a solid surface Feb. 8, 2000
6022751 Production of electronic device Feb. 8, 2000
6013574 Method of forming low resistance contact structures in vias arranged between two levels of interconnect lines Jan. 11, 2000
6001215 Semiconductor nitride film etching system Dec. 14, 1999
5970326 Thin film transistor films made with anodized film and reverse-anodized etching technique Oct. 19, 1999
5932485 Method of laser ablation of semiconductor structures Aug. 3, 1999
5877092 Method for edge profile and design rules control Mar. 2, 1999
5843363 Ablation patterning of multi-layered structures Dec. 1, 1998
5766497 Ablation pattering of multilayered structures Jun. 16, 1998
5652172 Method for controlling the etch profile of an aperture formed through a multi-layer insulator layer Jul. 29, 1997
5646095 Selective insulation etching for fabricating superconductor microcircuits Jul. 8, 1997
5639342 Method of monitoring and controlling a silicon nitride etch step Jun. 17, 1997
5622596 High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using a stoichiometrically altered nitride etch stop Apr. 22, 1997
5488246 Semiconductor device and method of manufacturing the same Jan. 30, 1996
5314847 Semiconductor substrate surface processing method using combustion flame May. 24, 1994
5310626 Method for forming a patterned layer using dielectric materials as a light-sensitive material May. 10, 1994
5310990 Method of laser processing ferroelectric materials May. 10, 1994
5270263 Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering Dec. 14, 1993
5091048 Ion milling to obtain planarization Feb. 25, 1992
4933299 Method of forming 3-D structures using MOVCD with in-situ photoetching Jun. 12, 1990
4795582 Surface treating composition for micro processing Jan. 3, 1989
4680855 Electronic device manufacturing methods Jul. 21, 1987
4662985 Method of smoothing out an irregular surface of an electronic device May. 5, 1987
4575921 Silicon nitride formation and use in self-aligned semiconductor device manufacturing method Mar. 18, 1986
4528211 Silicon nitride formation and use in self-aligned semiconductor device manufacturing method Jul. 9, 1985
4508749 Patterning of polyimide films with ultraviolet light Apr. 2, 1985
4397079 Process for improving the yield of integrated devices including Schottky barrier diodes Aug. 9, 1983
4190850 MIS field effect transistor having a short channel length Feb. 26, 1980
4176016 Forming electrically insulating layers by sputter deposition Nov. 27, 1979
4162210 Method for covering a first layer or layer sequence situated on a substrate with an additional second layer by a sputtering-on process Jul. 24, 1979
4092210 Process for the production of etched structures in a surface of a solid body by ionic etching May. 30, 1978
4076575 Integrated fabrication method of forming connectors through insulative layers Feb. 28, 1978
4073054 Method of fabricating semiconductor device Feb. 14, 1978
4053350 Methods of defining regions of crystalline material of the group III-V compounds Oct. 11, 1977
3977955 Method for cathodic sputtering including suppressing temperature rise Aug. 31, 1976
3943047 Selective removal of material by sputter etching Mar. 9, 1976

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