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Class Information
Number: 257/E21.249
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Etching insulating layer by chemical or physical means (epo)
Description: This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/311.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7407890 |
Patterning sub-lithographic features with variable widths |
Aug. 5, 2008 |
| 7405165 |
Dual-tank etch method for oxide thickness control |
Jul. 29, 2008 |
| 7361598 |
Method for fabricating semiconductor device capable of preventing scratch |
Apr. 22, 2008 |
| 7309634 |
Non-volatile semiconductor memory devices using prominences and trenches |
Dec. 18, 2007 |
| 7262488 |
Substrate with enhanced properties for planarization |
Aug. 28, 2007 |
| 7250364 |
Semiconductor devices with composite etch stop layers and methods of fabrication thereof |
Jul. 31, 2007 |
| 7226872 |
Lightly doped drain MOS transistor |
Jun. 5, 2007 |
| 7208363 |
Fabrication of local interconnect lines |
Apr. 24, 2007 |
| 7169711 |
Method of using carbon spacers for critical dimension (CD) reduction |
Jan. 30, 2007 |
| 6486073 |
Method for stripping a photo resist on an aluminum alloy |
Nov. 26, 2002 |
| 5843363 |
Ablation patterning of multi-layered structures |
Dec. 1, 1998 |
| 5795825 |
Connection layer forming method |
Aug. 18, 1998 |
| 5783482 |
Method to prevent oxide peeling induced by sog etchback on the wafer edge |
Jul. 21, 1998 |
| 4789427 |
Method for removing resist from semiconductor device |
Dec. 6, 1988 |
| 4705597 |
Photoresist tapering process |
Nov. 10, 1987 |
| 4672023 |
Method for planarizing wafers |
Jun. 9, 1987 |
| 4529860 |
Plasma etching of organic materials |
Jul. 16, 1985 |
| 4470871 |
Preparation of organic layers for oxygen etching |
Sep. 11, 1984 |
| 4201579 |
Method for removing photoresist by hydrogen plasma |
May. 6, 1980 |
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