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Class Information
Number: 257/E21.247
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Doping insulating layer (epo)
Description: This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3115.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.248 By ion implantation (epo) 189


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8598643 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 3, 2013
8569821 Semiconductor devices and methods of forming the same Oct. 29, 2013
8481393 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device Jul. 9, 2013
8420484 Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same Apr. 16, 2013
8415256 Gap-filling with uniform properties Apr. 9, 2013
8390074 Structure and method for latchup improvement using through wafer via latchup guard ring Mar. 5, 2013
8293659 Method for fabricating dielectric layer with improved insulating properties Oct. 23, 2012
8174078 Flat-panel display semiconductor process for efficient manufacturing May. 8, 2012
8110490 Gate oxide leakage reduction Feb. 7, 2012
8048787 Methods of forming semiconductor devices Nov. 1, 2011
8004048 Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same Aug. 23, 2011
7989282 Structure and method for latchup improvement using through wafer via latchup guard ring Aug. 2, 2011
7968954 Intermediate semiconductor device having nitrogen concentration profile Jun. 28, 2011
7951696 Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes May. 31, 2011
7948017 Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same May. 24, 2011
7939436 Method of fabricating a semiconductor device May. 10, 2011
7927986 Ion implantation with heavy halogenide compounds Apr. 19, 2011
7915174 Dielectric stack containing lanthanum and hafnium Mar. 29, 2011
7902669 Semiconductor device and method for manufacturing the same Mar. 8, 2011
7884030 Gap-filling with uniform properties Feb. 8, 2011
7879666 Semiconductor resistor formed in metal gate stack Feb. 1, 2011
7867809 One-step diffusion method for fabricating a differential doped solar cell Jan. 11, 2011
7863115 Flat-panel display semiconductor process for efficient manufacturing Jan. 4, 2011
7851318 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device Dec. 14, 2010
7829402 MOSFET devices and methods of making Nov. 9, 2010
7824943 Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same Nov. 2, 2010
7816221 Dielectric ledge for high frequency devices Oct. 19, 2010
7790563 Semiconductor device, electronic device and method for manufacturing semiconductor device Sep. 7, 2010
7767520 Printed dopant layers Aug. 3, 2010
7662729 Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer Feb. 16, 2010
7629267 High stress nitride film and method for formation thereof Dec. 8, 2009
7622353 Method for forming recessed gate structure with stepped profile Nov. 24, 2009
7528026 Method for reducing silicide defects by removing contaminants prior to drain/source activation May. 5, 2009
7456042 Microelectromechanical systems having stored charge and methods for fabricating and using same Nov. 25, 2008
7411237 Lanthanum hafnium oxide dielectrics Aug. 12, 2008
7312127 Incorporating dopants to enhance the dielectric properties of metal silicates Dec. 25, 2007
7287328 Methods for distributed electrode injection Oct. 30, 2007
7244647 Embedded capacitor structure in circuit board and method for fabricating the same Jul. 17, 2007
7064062 Incorporating dopants to enhance the dielectric properties of metal silicates Jun. 20, 2006
7045073 Pre-etch implantation damage for the removal of thin film layers May. 16, 2006
7026694 Lanthanide doped TiO.sub.x dielectric films by plasma oxidation Apr. 11, 2006
6955960 Decoupling capacitor for high frequency noise immunity Oct. 18, 2005
6933248 Method for transistor gate dielectric layer with uniform nitrogen concentration Aug. 23, 2005
6887797 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer May. 3, 2005
6884739 Lanthanide doped TiOx dielectric films by plasma oxidation Apr. 26, 2005
6821868 Method of forming nitrogen enriched gate dielectric with low effective oxide thickness Nov. 23, 2004
6812159 Method of forming a low leakage dielectric layer providing an increased capacitive coupling Nov. 2, 2004
6797646 Method of nitrogen doping of fluorinated silicate glass (FSG) while removing the photoresist layer Sep. 28, 2004
6777281 Maintaining LDD series resistance of MOS transistors by retarding dopant segregation Aug. 17, 2004
6753563 Integrated circuit having a doped porous dielectric and method of manufacturing the same Jun. 22, 2004

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