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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6395635 Reduction of tungsten damascene residue May. 28, 2002
6391792 Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer May. 21, 2002
6391781 Method of making a semiconductor device May. 21, 2002
6391779 Planarization process May. 21, 2002
6386951 Methods of polishing materials, methods of slowing a rate of material removal of a polishing process, and methods of forming trench isolation regions May. 14, 2002
6387770 Thin-film capacitors and methods for forming the same May. 14, 2002
6387812 Ultrasonic processing of chemical mechanical polishing slurries May. 14, 2002
6383332 Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint May. 7, 2002
6383933 Method of using organic material to enhance STI planarization or other planarization processes May. 7, 2002
6384468 Capacitor and method for forming same May. 7, 2002
6384482 Method for forming a dielectric layer in a semiconductor device by using etch stop layers May. 7, 2002
6380092 Gas phase planarization process for semiconductor wafers Apr. 30, 2002
6380066 Methods for eliminating metal corrosion by FSG Apr. 30, 2002
6379222 Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer Apr. 30, 2002
6379225 Planarization process with abrasive polishing slurry that is selective to a planarized surface Apr. 30, 2002
6375548 Chemical-mechanical polishing methods Apr. 23, 2002
6375545 Chemical mechanical method of polishing wafer surfaces Apr. 23, 2002
6376378 Polishing apparatus and method for forming an integrated circuit Apr. 23, 2002
6375694 Polishing slurry compositions capable of providing multi-modal particle packing Apr. 23, 2002
6375754 Processing compositions and methods of using same Apr. 23, 2002
6376381 Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies Apr. 23, 2002
6376394 Method of forming inter-metal dielectric layer Apr. 23, 2002
6372003 Polishing abrasive of crystalline ceric oxide particles having surfaces modified with hydroxyl groups Apr. 16, 2002
6372648 Integrated circuit planarization method Apr. 16, 2002
6372632 Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer Apr. 16, 2002
6372572 Method of planarizing peripheral circuit region of a DRAM Apr. 16, 2002
6365523 Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers Apr. 2, 2002
6361415 Employing an acidic liquid and an abrasive surface to polish a semiconductor topography Mar. 26, 2002
6362105 Method and apparatus for endpointing planarization of a microelectronic substrate Mar. 26, 2002
6361402 Method for planarizing photoresist Mar. 26, 2002
6358816 Method for uniform polish in microelectronic device Mar. 19, 2002
6358850 Slurry-less chemical-mechanical polishing of oxide materials Mar. 19, 2002
6358849 Integrated circuit interconnect and method Mar. 19, 2002
6355524 Nonvolatile memory structures and fabrication methods Mar. 12, 2002
6355565 Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers Mar. 12, 2002
6352928 Method of forming trench isolation Mar. 5, 2002
6350393 Use of CsOH in a dielectric CMP slurry Feb. 26, 2002
6350692 Increased polish removal rate of dielectric layers using fixed abrasive pads Feb. 26, 2002
6348395 Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow Feb. 19, 2002
6348415 Planarization method for semiconductor device Feb. 19, 2002
6348706 Method to form etch and/or CMP stop layers Feb. 19, 2002
6344416 Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions Feb. 5, 2002
6343976 Abrasive, method of polishing wafer, and method of producing semiconductor device Feb. 5, 2002
6342166 Method of detecting end point of polishing of wafer and apparatus for detecting end point of polishing Jan. 29, 2002
6342337 Ferroelectric memory cell fabrication method Jan. 29, 2002
6339008 Method of manufacturing a semiconductor memory device Jan. 15, 2002
6336845 Method and apparatus for polishing semiconductor wafers Jan. 8, 2002
6337279 Method of fabricating a shallow trench isolation Jan. 8, 2002
6337281 Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like Jan. 8, 2002
6335287 Method of forming trench isolation regions Jan. 1, 2002

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