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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6458290 Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers Oct. 1, 2002
6454819 Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device Sep. 24, 2002
6455432 Method for removing carbon-rich particles adhered on a copper surface Sep. 24, 2002
6454956 Structuring method Sep. 24, 2002
6451699 Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom Sep. 17, 2002
6450863 Method and apparatus for uniformly planarizing a microelectronic substrate Sep. 17, 2002
6448630 Semiconductor device comprising a polish preventing pattern Sep. 10, 2002
6443807 Polishing process for use in method of fabricating semiconductor device Sep. 3, 2002
6443811 Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing Sep. 3, 2002
6444581 AB etch endpoint by ABFILL compensation Sep. 3, 2002
6444569 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process Sep. 3, 2002
6439989 Polymeric polishing pad having continuously regenerated work surface Aug. 27, 2002
6436835 Composition for polishing a semiconductor device and process for manufacturing a semiconductor device using the same Aug. 20, 2002
6436833 Method for pre-STI-CMP planarization using poly-si thermal oxidation Aug. 20, 2002
6437444 Interlayer dielectric with a composite dielectric stack Aug. 20, 2002
6436831 Methods of forming insulative plugs and oxide plug forming methods Aug. 20, 2002
6436834 Chemical-mechanical abrasive composition and method Aug. 20, 2002
6432797 Simplified method to reduce or eliminate STI oxide divots Aug. 13, 2002
6429132 Combination CMP-etch method for forming a thin planar layer over the surface of a device Aug. 6, 2002
6428392 Abrasive Aug. 6, 2002
6428388 Finishing element with finishing aids Aug. 6, 2002
6428387 Method for chemical mechanical polishing using a high selective slurry Aug. 6, 2002
6425956 Process for removing chemical mechanical polishing residual slurry Jul. 30, 2002
6426296 Method and apparatus for obtaining a precision thickness in semiconductor and other wafers Jul. 30, 2002
6421973 Wallboard sheet including aerated concrete core Jul. 23, 2002
6423992 Semiconductor integrated circuit device Jul. 23, 2002
6419785 Endpoint detection by chemical reaction Jul. 16, 2002
6420268 Methods of forming materials within openings, and methods of forming isolation regions Jul. 16, 2002
6420265 Method for polishing semiconductor device Jul. 16, 2002
6419557 Polishing method and polisher used in the method Jul. 16, 2002
6417073 Method for forming element isolating region Jul. 9, 2002
6416685 Chemical mechanical planarization of low dielectric constant materials Jul. 9, 2002
6416619 System for making wallboard or backerboard sheets including aerated concrete Jul. 9, 2002
6416385 Method and apparatus for polishing semiconductor wafers Jul. 9, 2002
6413871 Nitrogen treatment of polished halogen-doped silicon glass Jul. 2, 2002
6413870 Process of removing CMP scratches by BPSG reflow and integrated circuit chip formed thereby Jul. 2, 2002
6410439 Semiconductor polishing apparatus and method for chemical/mechanical polishing of films Jun. 25, 2002
6409855 Method for making wallboard or backerboard sheets including aerated concrete Jun. 25, 2002
6410106 Method of forming an intermetal dielectric layer Jun. 25, 2002
6410403 Method for planarizing a shallow trench isolation Jun. 25, 2002
6410444 Composition for polishing a semiconductor device and process for manufacturing a semiconductor device using the same Jun. 25, 2002
6410440 Method and apparatus for a gaseous environment providing improved control of CMP process Jun. 25, 2002
6410443 Method for removing semiconductor ARC using ARC CMP buffing Jun. 25, 2002
6403459 Fabrication process of semiconductor integrated circuit device Jun. 11, 2002
6403492 Method of manufacturing semiconductor devices with trench isolation Jun. 11, 2002
6403484 Method to achieve STI planarization Jun. 11, 2002
6396158 Semiconductor device and a process for designing a mask May. 28, 2002
6396160 Fill strategies in the optical kerf May. 28, 2002
6396146 Semiconductor device and its manufacturing method May. 28, 2002
6396123 Semiconductor device provided with on-chip decoupling condenser utilizing CMP dummy patterns May. 28, 2002

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