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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6537919 Process to remove micro-scratches Mar. 25, 2003
6534407 Method for reducing dishing effects during a chemical mechanical polishing process Mar. 18, 2003
6530995 Processing compositions and methods of using same Mar. 11, 2003
6531265 Method to planarize semiconductor surface Mar. 11, 2003
RE38029 Wafer polishing and endpoint detection Mar. 11, 2003
6528389 Substrate planarization with a chemical mechanical polishing stop layer Mar. 4, 2003
6524961 Semiconductor device fabricating method Feb. 25, 2003
6524911 Combination of BPTEOS oxide film with CMP and RTA to achieve good data retention Feb. 25, 2003
6522007 Semiconductor device having dummy patterns for metal CMP Feb. 18, 2003
6521969 Semiconductor device and method of producing the same Feb. 18, 2003
6521537 Modification to fill layers for inlaying semiconductor patterns Feb. 18, 2003
6521536 Planarization process Feb. 18, 2003
6518172 Method for applying uniform pressurized film across wafer Feb. 11, 2003
6518157 Methods of planarizing insulating layers on regions having different etching rates Feb. 11, 2003
6517418 Method of transporting a semiconductor wafer in a wafer polishing system Feb. 11, 2003
6514863 Method and apparatus for slurry distribution profile control in chemical-mechanical planarization Feb. 4, 2003
6514864 Fabrication method for semiconductor integrated circuit device Feb. 4, 2003
6514821 Method for planarizing dielectric layer of flash memory Feb. 4, 2003
6514673 Rule to determine CMP polish time Feb. 4, 2003
6514858 Test structure for providing depth of polish feedback Feb. 4, 2003
6509260 Method of shallow trench isolation using a single mask Jan. 21, 2003
6506682 Non-selective slurries for chemical mechanical polishing of metal layers and method for manufacturing thereof Jan. 14, 2003
6506679 Deadhesion method and mechanism for wafer processing Jan. 14, 2003
6503836 Method and apparatus for manufacturing semiconductor device Jan. 7, 2003
6503804 Method of manufacturing a semiconductor device Jan. 7, 2003
6504234 Semiconductor device with interlayer film comprising a diffusion prevention layer to keep metal impurities from invading the underlying semiconductor substrate Jan. 7, 2003
6498102 Method for planarizing a semiconductor device using ceria-based slurry Dec. 24, 2002
6497784 Semiconductor wafer edge bead removal method and tool Dec. 24, 2002
6495907 Conductor reticulation for improved device planarity Dec. 17, 2002
6492273 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Dec. 10, 2002
6488730 Polishing composition Dec. 3, 2002
6487712 Method of manufacturing mask for conductive wirings in semiconductor device Nov. 26, 2002
6485355 Method to increase removal rate of oxide using fixed-abrasive Nov. 26, 2002
6478977 Polishing method and apparatus Nov. 12, 2002
6479387 Method for reducing micro-particle adsorption effects Nov. 12, 2002
6475879 Semiconductor wafer, method for processing the same and method for manufacturing semiconductor device Nov. 5, 2002
6475407 Composition for polishing metal on semiconductor wafer and method of using same Nov. 5, 2002
6475072 Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP) Nov. 5, 2002
6472325 Method and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Oct. 29, 2002
6472324 Method of manufacturing trench type element isolation structure Oct. 29, 2002
6471735 Compositions for use in a chemical-mechanical planarization process Oct. 29, 2002
6468909 Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions Oct. 22, 2002
6468912 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Oct. 22, 2002
6468921 Thin-film forming method Oct. 22, 2002
6468951 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication Oct. 22, 2002
6465351 Method of forming a capacitor lower electrode using a CMP stopping layer Oct. 15, 2002
6461941 Method of forming capacitor on cell region including forming dummy pattern around alignment key Oct. 8, 2002
6462402 Microelectronic substrate comprised of etch stop layer, stiffening layer, and endpointing layer Oct. 8, 2002
6461964 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Oct. 8, 2002
6461932 Semiconductor trench isolation process that utilizes smoothening layer Oct. 8, 2002

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

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