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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304


Patents under this class:
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Patent Number Title Of Patent Date Issued
6821791 Method for reworking metal layers on integrated circuit bond pads Nov. 23, 2004
6821895 Dynamically adjustable slurry feed arm for wafer edge profile improvement in CMP Nov. 23, 2004
6818507 Method of manufacturing semiconductor device including memory region and logic circuit region Nov. 16, 2004
6815332 Method for forming integrated dielectric layers Nov. 9, 2004
6814835 Apparatus and method for supplying chemicals in chemical mechanical polishing systems Nov. 9, 2004
6810511 Method of designing active region pattern with shift dummy pattern Oct. 26, 2004
6803316 Method of planarizing by removing all or part of an oxidizable material layer from a semiconductor substrate Oct. 12, 2004
6800174 System for making wallboard or backerboard sheets including aerated concrete Oct. 5, 2004
6798010 Ferroelectric memory devices Sep. 28, 2004
6797625 Method of forming a protective step on the edge of a semiconductor wafer Sep. 28, 2004
6794691 Use of irregularly shaped conductive filler features to improve planarization of the conductive layer while reducing parasitic capacitance introduced by the filler features Sep. 21, 2004
6794267 Process of manufacturing semiconductor device Sep. 21, 2004
6786944 Aqueous dispersion for chemical mechanical polishing Sep. 7, 2004
6787471 Method of manufacturing a semiconductor device Sep. 7, 2004
6786809 Wafer carrier, wafer carrier components, and CMP system for polishing a semiconductor topography Sep. 7, 2004
6786945 Polishing compound and method for polishing substrate Sep. 7, 2004
6784548 Semiconductor device having dummy patterns for metal CMP Aug. 31, 2004
6783434 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate Aug. 31, 2004
6782512 Fabrication method for a semiconductor device with dummy patterns Aug. 24, 2004
6780771 Forming a substantially planar upper surface at the outer edge of a semiconductor topography Aug. 24, 2004
6777307 Method of forming semiconductor structures with reduced step heights Aug. 17, 2004
6777336 Method of forming a shallow trench isolation structure Aug. 17, 2004
6777337 Planarizing method of semiconductor wafer and apparatus thereof Aug. 17, 2004
6774042 Planarization method for deep sub micron shallow trench isolation process Aug. 10, 2004
6770929 Method for uniform polish in microelectronic device Aug. 3, 2004
6770218 Composition for polishing metal on semiconductor wafer and method of using same Aug. 3, 2004
6770523 Method for semiconductor wafer planarization by CMP stop layer formation Aug. 3, 2004
6767377 Aqueous dispersion containing cerium oxide-coated silicon powder, process for the production thereof and use thereof Jul. 27, 2004
6758735 Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates Jul. 6, 2004
6758872 Polishing slurry Jul. 6, 2004
6759345 Method of manufacturing a semiconductor device including etching of a peripheral area before chemical-mechanical polishing Jul. 6, 2004
6759322 Method for forming wiring structure Jul. 6, 2004
6757199 Nonvolatile memory structures and fabrication methods Jun. 29, 2004
6756308 Chemical-mechanical planarization using ozone Jun. 29, 2004
6753246 Semiconductor device with a first dummy pattern Jun. 22, 2004
6746317 Methods and apparatuses for making and using planarizing pads for mechanical and chemical mechanical planarization of microelectronic substrates Jun. 8, 2004
6743724 Planarization process for semiconductor substrates Jun. 1, 2004
6739947 In situ friction detector method and apparatus May. 25, 2004
6737348 Method for forming buried interconnect May. 18, 2004
6737363 Method of manufacturing semiconductor device May. 18, 2004
6736992 Chemical mechanical planarization of low dielectric constant materials May. 18, 2004
6733685 Methods of planarizing structures on wafers and substrates by polishing May. 11, 2004
6733553 Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same May. 11, 2004
6730590 Semiconductor integrated circuit device and fabrication process thereof May. 4, 2004
6726534 Preequilibrium polishing method and system Apr. 27, 2004
6723655 Methods for fabricating a semiconductor device Apr. 20, 2004
6723646 Method for controlling and monitoring a chemical mechanical polishing process Apr. 20, 2004
6723644 Method of fabricating a semiconductor device using two chemical mechanical polishing processes to polish regions having different conductive pattern densities Apr. 20, 2004
6723144 Semiconductor device fabricating method Apr. 20, 2004
6723691 Post chemical-mechanical planarization (CMP) cleaning composition Apr. 20, 2004

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