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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
5348615 Selective planarization method using regelation Sep. 20, 1994
5334281 Method of forming thin silicon mesas having uniform thickness Aug. 2, 1994
5332467 Chemical/mechanical polishing for ULSI planarization Jul. 26, 1994
5324690 Semiconductor device having a ternary boron nitride film and a method for forming the same Jun. 28, 1994
5318927 Methods of chemical-mechanical polishing insulating inorganic metal oxide materials Jun. 7, 1994
5314843 Integrated circuit polishing method May. 24, 1994
5312512 Global planarization using SOG and CMP May. 17, 1994
5312770 Techniques for forming isolation structures May. 17, 1994
5308438 Endpoint detection apparatus and method for chemical/mechanical polishing May. 3, 1994
5302551 Method for planarizing the surface of an integrated circuit over a metal interconnect layer Apr. 12, 1994
5300188 Process for making substantially smooth diamond Apr. 5, 1994
5300155 IC chemical mechanical planarization process incorporating slurry temperature control Apr. 5, 1994
5298110 Trench planarization techniques Mar. 29, 1994
5292689 Method for planarizing semiconductor structure using subminimum features Mar. 8, 1994
5290396 Trench planarization techniques Mar. 1, 1994
5248625 Techniques for forming isolation structures Sep. 28, 1993
5246884 CVD diamond or diamond-like carbon for chemical-mechanical polish etch stop Sep. 21, 1993
5246525 Apparatus for polishing Sep. 21, 1993
5240552 Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection Aug. 31, 1993
5234868 Method for determining planarization endpoint during chemical-mechanical polishing Aug. 10, 1993
5229331 Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology Jul. 20, 1993
5225358 Method of forming late isolation with polishing Jul. 6, 1993
5217566 Densifying and polishing glass layers Jun. 8, 1993
5196353 Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer Mar. 23, 1993
5173439 Forming wide dielectric-filled isolation trenches in semi-conductors Dec. 22, 1992
5169491 Method of etching SiO.sub.2 dielectric layers using chemical mechanical polishing techniques Dec. 8, 1992
5127196 Apparatus for planarizing a dielectric formed over a semiconductor substrate Jul. 7, 1992
5114875 Planar dielectric isolated wafer May. 19, 1992
5104828 Method of planarizing a dielectric formed over a semiconductor substrate Apr. 14, 1992
5094972 Means of planarizing integrated circuits with fully recessed isolation dielectric Mar. 10, 1992
5084407 Method for planarizing isolated regions Jan. 28, 1992
5069002 Apparatus for endpoint detection during mechanical planarization of semiconductor wafers Dec. 3, 1991
5064683 Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop Nov. 12, 1991
5051378 Method of thinning a semiconductor wafer Sep. 24, 1991
5036015 Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers Jul. 30, 1991
4944836 Chem-mech polishing method for producing coplanar metal/insulator films on a substrate Jul. 31, 1990
4910155 Wafer flood polishing Mar. 20, 1990
4879258 Integrated circuit planarization by mechanical polishing Nov. 7, 1989
4735679 Method of improving silicon-on-insulator uniformity Apr. 5, 1988
4691222 Method to reduce the height of the bird's head in oxide isolated processes Sep. 1, 1987
4671851 Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique Jun. 9, 1987
4612701 Method to reduce the height of the bird's head in oxide isolated processes Sep. 23, 1986

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

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