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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
5578531 Method for manufacturing semiconductor device Nov. 26, 1996
5578362 Polymeric polishing pad containing hollow polymeric microelements Nov. 26, 1996
5575886 Method for fabricating semiconductor device with chemical-mechanical polishing process for planarization of interlayer insulation films Nov. 19, 1996
5569618 Method for planarizing insulating film Oct. 29, 1996
5567661 Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound Oct. 22, 1996
5560802 Selective CMP of in-situ deposited multilayer films to enhance nonplanar step height reduction Oct. 1, 1996
5554555 Planarizing by polishing techniques for fabricating semiconductor devices based on CMOS structures Sep. 10, 1996
5552346 Planarization and etch back process for semiconductor layers Sep. 3, 1996
5540810 IC mechanical planarization process incorporating two slurry compositions for faster material removal times Jul. 30, 1996
5539240 Planarized semiconductor structure with subminimum features Jul. 23, 1996
5532191 Method of chemical mechanical polishing planarization of an insulating film using an etching stop Jul. 2, 1996
5516729 Method for planarizing a semiconductor topography using a spin-on glass material with a variable chemical-mechanical polish rate May. 14, 1996
5514245 Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches May. 7, 1996
5514616 Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures May. 7, 1996
5512163 Method for forming a planarization etch stop Apr. 30, 1996
5510652 Polishstop planarization structure Apr. 23, 1996
5502007 Method of forming flat surface of insulator film of semiconductor device Mar. 26, 1996
5500558 Semiconductor device having a planarized surface Mar. 19, 1996
5498565 Method of forming trench isolation having polishing step and method of manufacturing semiconductor device Mar. 12, 1996
5494854 Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO.sub.2 films Feb. 27, 1996
5494857 Chemical mechanical planarization of shallow trenches in semiconductor substrates Feb. 27, 1996
5492594 Chemical-mechanical polishing tool with end point measurement station Feb. 20, 1996
5491113 Method of manufacturing semiconductor device having a planarized surface Feb. 13, 1996
5478436 Selective cleaning process for fabricating a semiconductor device Dec. 26, 1995
5476606 Compositions and methods for polishing Dec. 19, 1995
5472370 Method of planarizing polycrystalline diamonds, planarized polycrystalline diamonds and products made therefrom Dec. 5, 1995
5471091 Techniques for via formation and filling Nov. 28, 1995
5468682 Method of manufacturing semiconductor device using the abrasive Nov. 21, 1995
5465003 Planarized local oxidation by trench-around technology Nov. 7, 1995
5459096 Process for fabricating a semiconductor device using dual planarization layers Oct. 17, 1995
5453639 Planarized semiconductor structure using subminimum features Sep. 26, 1995
5449314 Method of chimical mechanical polishing for dielectric layers Sep. 12, 1995
5448111 Semiconductor device and method for fabricating the same Sep. 5, 1995
5445996 Method for planarizing a semiconductor device having a amorphous layer Aug. 29, 1995
5445998 Method for the global planarization of surfaces of semiconductor integrated circuits Aug. 29, 1995
5441915 Process of fabrication planarized metallurgy structure for a semiconductor device Aug. 15, 1995
5441094 Trench planarization techniques Aug. 15, 1995
5433650 Method for polishing a substrate Jul. 18, 1995
5419803 Method of planarizing microstructures May. 30, 1995
5413966 Shallow trench etch May. 9, 1995
5413953 Method for planarizing an insulator on a semiconductor substrate using ion implantation May. 9, 1995
5395801 Chemical-mechanical polishing processes of planarizing insulating layers Mar. 7, 1995
5391258 Compositions and methods for polishing Feb. 21, 1995
5389194 Methods of cleaning semiconductor substrates after polishing Feb. 14, 1995
5385866 Polish planarizing using oxidized boron nitride as a polish stop Jan. 31, 1995
5372973 Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology Dec. 13, 1994
5372673 Method for processing a layer of material while using insitu monitoring and control Dec. 13, 1994
5372968 Planarized local oxidation by trench-around technology Dec. 13, 1994
5362669 Method of making integrated circuits Nov. 8, 1994
5356513 Polishstop planarization method and structure Oct. 18, 1994

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