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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
5883004 Method of planarization using interlayer dielectric Mar. 16, 1999
5880007 Planarization of a non-conformal device layer in semiconductor fabrication Mar. 9, 1999
5880039 Method for forming interlayer insulating film of a semiconductor device Mar. 9, 1999
5880003 Method of giving a substantially flat surface of a semiconductor device through a polishing operation Mar. 9, 1999
5872060 Semiconductor device manufacturing method Feb. 16, 1999
5865891 Planarization process using artificial gravity Feb. 2, 1999
5861054 Polishing slurry Jan. 19, 1999
5855811 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication Jan. 5, 1999
5855804 Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints Jan. 5, 1999
5854125 Dummy fill patterns to improve interconnect planarity Dec. 29, 1998
5853604 Method of planarizing an insulating layer in a semiconductor device Dec. 29, 1998
5854133 Method for manufacturing a semiconductor device Dec. 29, 1998
5851899 Gapfill and planarization process for shallow trench isolation Dec. 22, 1998
5851874 Method of planarizing memory cells Dec. 22, 1998
5851846 Polishing method for SOI Dec. 22, 1998
5849637 Integration of spin-on gap filling dielectric with W-plug without outgassing Dec. 15, 1998
5840623 Efficient and economical method of planarization of multilevel metallization structures in integrated circuits using CMP Nov. 24, 1998
5840619 Method of making a semiconductor device having a planarized surface Nov. 24, 1998
5837612 Silicon chemical mechanical polish etch (CMP) stop for reduced trench fill erosion and method for formation Nov. 17, 1998
5834375 Chemical-mechanical polishing planarization monitor Nov. 10, 1998
5827781 Planarization slurry including a dispersant and method of using same Oct. 27, 1998
5824360 Method of planarizing film in semiconductor device Oct. 20, 1998
5811345 Planarization of shallow- trench- isolation without chemical mechanical polishing Sep. 22, 1998
5811864 Planarized integrated circuit product and method for making it Sep. 22, 1998
5807165 Method of electrochemical mechanical planarization Sep. 15, 1998
5804490 Method of filling shallow trenches Sep. 8, 1998
5804514 Method of planarizing a film of a semiconductor device Sep. 8, 1998
5801090 Method of protecting an alignment mark in a semiconductor manufacturing process with CMP Sep. 1, 1998
5798302 Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers Aug. 25, 1998
5795495 Method of chemical mechanical polishing for dielectric layers Aug. 18, 1998
5792707 Global planarization method for inter level dielectric layers of integrated circuits Aug. 11, 1998
5792705 Optimized planarization process for SOG filled vias Aug. 11, 1998
5789313 Process for producing a semiconductor device with a planar top surface Aug. 4, 1998
5783488 Optimized underlayer structures for maintaining chemical mechanical polishing removal rates Jul. 21, 1998
5783497 Forced-flow wafer polisher Jul. 21, 1998
5780346 N.sub.2 O nitrided-oxide trench sidewalls and method of making isolation structure Jul. 14, 1998
5779520 Method and apparatus of polishing wafer Jul. 14, 1998
5773871 Integrated circuit structure and method of fabrication thereof Jun. 30, 1998
5773367 High throughput planarization etch process for interlayer oxide films between metals and pre-metals Jun. 30, 1998
5773360 Reduction of surface contamination in post-CMP cleaning Jun. 30, 1998
5772780 Polishing agent and polishing method Jun. 30, 1998
5770103 Composition and method for polishing a composite comprising titanium Jun. 23, 1998
5769696 Chemical-mechanical polishing of thin materials using non-baked carrier film Jun. 23, 1998
5769691 Methods and apparatus for the chemical mechanical planarization of electronic devices Jun. 23, 1998
5766279 Polishing agent, method for producing the same and method for polishing Jun. 16, 1998
5763325 Fabrication process of a semiconductor device using a slurry containing manganese oxide Jun. 9, 1998
5759906 Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits Jun. 2, 1998
5753566 Method of spin-on-glass etchback using hot backside helium May. 19, 1998
5747385 Method of planarizing interlayer dielectric May. 5, 1998
5747382 Two-step planarization process using chemical-mechanical polishing and reactive-ion-etching May. 5, 1998

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