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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6043158 Semiconductor device with contact holes differing in depth and manufacturing method thereof Mar. 28, 2000
6043155 Polishing agent and polishing method Mar. 28, 2000
6040245 IC mechanical planarization process incorporating two slurry compositions for faster material removal times Mar. 21, 2000
6034434 Optimized underlayer structures for maintaining chemical mechanical polishing removal rates Mar. 7, 2000
6033961 Isolation trench fabrication process Mar. 7, 2000
6030892 Method of preventing overpolishing in a chemical-mechanical polishing operation Feb. 29, 2000
6030425 Catalytic acceleration and electrical bias control of CMP processing Feb. 29, 2000
6030491 Processing compositions and methods of using same Feb. 29, 2000
6028013 Moisture repellant integrated circuit dielectric material combination Feb. 22, 2000
6027996 Method of planarizing a pre-metal dielectric layer using chemical-mechanical polishing Feb. 22, 2000
6026830 Post-CMP cleaner apparatus and method Feb. 22, 2000
6025279 Method of reducing nitride and oxide peeling after planarization using an anneal Feb. 15, 2000
6025270 Planarization process using tailored etchback and CMP Feb. 15, 2000
6025244 Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors Feb. 15, 2000
6022807 Method for fabricating an integrated circuit Feb. 8, 2000
6020265 Method for forming a planar intermetal dielectric layer Feb. 1, 2000
6020264 Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing Feb. 1, 2000
6019806 High selectivity slurry for shallow trench isolation processing Feb. 1, 2000
6020262 Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer Feb. 1, 2000
6017803 Method to prevent dishing in chemical mechanical polishing Jan. 25, 2000
6017780 Passivation scheme for LCD and other applications Jan. 25, 2000
6015757 Method of oxide etching with high selectivity to silicon nitride by using polysilicon layer Jan. 18, 2000
6012970 Process for forming a semiconductor device Jan. 11, 2000
6010942 Post chemical mechanical polishing, clean procedure, used for fabrication of a crown shaped capacitor structure Jan. 4, 2000
6010963 Global planarization using SOG and CMP Jan. 4, 2000
6010945 Method for preventing alignment marks from disappearing after chemical mechanical polishing Jan. 4, 2000
6008116 Selective etching for improved dielectric interlayer planarization Dec. 28, 1999
6004653 Planarization process by applying a polish-differentiating technique utilizing an ultraviolet-light sensitive organic oxide layer Dec. 21, 1999
6001708 Method for fabricating a shallow trench isolation structure using chemical-mechanical polishing Dec. 14, 1999
6001731 Isolation dielectric deposition in multi-polysilicon chemical-mechanical polishing process Dec. 14, 1999
6001747 Process to improve adhesion of cap layers in integrated circuits Dec. 14, 1999
6001740 Planarization of a non-conformal device layer in semiconductor fabrication Dec. 14, 1999
5998278 Method of fabricating shallow trench isolation structures using a oxidized polysilicon trench mask Dec. 7, 1999
5994224 IC mechanical planarization process incorporating two slurry compositions for faster material removal times Nov. 30, 1999
5989977 Shallow trench isolation process Nov. 23, 1999
5981394 Chemical mechanical polishing method, polisher used in chemical mechanical polishing and method of manufacturing semiconductor device Nov. 9, 1999
5981396 Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers Nov. 9, 1999
5981354 Semiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation process Nov. 9, 1999
5976949 Method for forming shallow trench isolation Nov. 2, 1999
5976979 Sequential oxygen plasma treatment and chemical mechanical polish (CMP) planarizing method for forming planarized low dielectric constant dielectric layer Nov. 2, 1999
5976982 Methods for protecting device components from chemical mechanical polish induced defects Nov. 2, 1999
5972792 Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad Oct. 26, 1999
5972787 CMP process using indicator areas to determine endpoint Oct. 26, 1999
5972124 Method for cleaning a surface of a dielectric material Oct. 26, 1999
5968239 Polishing slurry Oct. 19, 1999
5968843 Method of planarizing a semiconductor topography using multiple polish pads Oct. 19, 1999
5968710 Controlled removal of electron beam curable coatings and articles formed thereby Oct. 19, 1999
5968842 Techniques for reduced dishing in chemical mechanical polishing Oct. 19, 1999
5965459 Method for removing crevices induced by chemical-mechanical polishing Oct. 12, 1999
5965941 Use of dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing Oct. 12, 1999

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

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