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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6114247 Polishing cloth for use in a CMP process and a surface treatment thereof Sep. 5, 2000
6114249 Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity Sep. 5, 2000
6113465 Method and apparatus for improving die planarity and global uniformity of semiconductor wafers in a chemical mechanical polishing context Sep. 5, 2000
6110820 Low scratch density chemical mechanical planarization process Aug. 29, 2000
6110831 Method of mechanical polishing Aug. 29, 2000
6109775 Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon Aug. 29, 2000
6110008 Polishing system Aug. 29, 2000
6106683 Grazing angle plasma polisher (GAPP) Aug. 22, 2000
6099662 Process for cleaning a semiconductor substrate after chemical-mechanical polishing Aug. 8, 2000
6099604 Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto Aug. 8, 2000
6096230 Method of planarizing by polishing a structure which is formed to promote planarization Aug. 1, 2000
6093649 Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto Jul. 25, 2000
6093652 Methods of forming insulative plugs, and oxide plug forming methods Jul. 25, 2000
6093590 Method of fabricating transistor having a metal gate and a gate dielectric layer with a high dielectric constant Jul. 25, 2000
6091130 Semiconductor device having structure suitable for CMP process Jul. 18, 2000
6090713 Shallow trench isolation formation with simplified reverse planarization mask Jul. 18, 2000
6087724 HSQ with high plasma etching resistance surface for borderless vias Jul. 11, 2000
6087262 Method for manufacturing shallow trench isolation structure Jul. 11, 2000
6083850 HSQ dielectric interlayer Jul. 4, 2000
6083089 Method and apparatus for chemical mechanical polishing Jul. 4, 2000
6083826 Method for manufacturing semiconductor device capable of improving planarization Jul. 4, 2000
6083839 Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control Jul. 4, 2000
6083851 HSQ with high plasma etching resistance surface for borderless vias Jul. 4, 2000
6084290 HSQ dielectric interlayer Jul. 4, 2000
6080671 Process of chemical-mechanical polishing and manufacturing an integrated circuit Jun. 27, 2000
6080670 Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie Jun. 27, 2000
6077785 Ultrasonic processing of chemical mechanical polishing slurries Jun. 20, 2000
6077738 Inter-level dielectric planarization approach for a DRAM crown capacitor process Jun. 20, 2000
6077784 Chemical-mechanical polishing method Jun. 20, 2000
6071818 Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material Jun. 6, 2000
6069080 Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like May. 30, 2000
6069083 Polishing method, semiconductor device fabrication method, and semiconductor fabrication apparatus May. 30, 2000
6069081 Two-step chemical mechanical polish surface planarization technique May. 30, 2000
6069069 Method for planarizing a low dielectric constant spin-on polymer using nitride etch stop May. 30, 2000
6066564 Indirect endpoint detection by chemical reaction May. 23, 2000
6066550 Method of improving selectivity between silicon nitride and silicon oxide May. 23, 2000
6066266 In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation May. 23, 2000
6062952 Planarization process with abrasive polishing slurry that is selective to a planarized surface May. 16, 2000
6060395 Planarization method using a slurry including a dispersant May. 9, 2000
6057242 Flat interlayer insulating film suitable for multi-layer wiring May. 2, 2000
6057251 Method for forming interlevel dielectric layer in semiconductor device using electron beams May. 2, 2000
6057602 Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers May. 2, 2000
6057245 Gas phase planarization process for semiconductor wafers May. 2, 2000
6054397 BPSG planarization method having improved planarity and reduced chatter mark defects Apr. 25, 2000
6054362 Method of patterning dummy layer Apr. 25, 2000
6048789 IC interconnect formation with chemical-mechanical polishing and silica etching with solution of nitric and hydrofluoric acids Apr. 11, 2000
6048800 Process for planarizing surface of a semiconductor device Apr. 11, 2000
6044851 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication Apr. 4, 2000
6043160 Method of manufacturing a monitor pad for chemical mechanical polishing planarization Mar. 28, 2000
6043159 Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon Mar. 28, 2000

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