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Class Information
Number: 257/E21.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo) > Involving dielectric removal step (epo)
Description: This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.245 Removal by chemical etching, e.g., dry etching (epo) 304

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6191050 Interlayer dielectric with a composite dielectric stack Feb. 20, 2001
6187683 Method for final passivation of integrated circuit Feb. 13, 2001
6183819 Method for processing a poly defect Feb. 6, 2001
6184143 Semiconductor integrated circuit device and fabrication process thereof Feb. 6, 2001
6184571 Method and apparatus for endpointing planarization of a microelectronic substrate Feb. 6, 2001
6184159 Interlayer dielectric planarization process Feb. 6, 2001
6180020 Polishing method and apparatus Jan. 30, 2001
6180525 Method of minimizing repetitive chemical-mechanical polishing scratch marks and of processing a semiconductor wafer outer surface Jan. 30, 2001
6180510 Method of manufacturing a substantially flat surface of a semiconductor device through a polishing operation Jan. 30, 2001
6180976 Thin-film capacitors and methods for forming the same Jan. 30, 2001
6180422 Endpoint detection by chemical reaction Jan. 30, 2001
6176763 Method and apparatus for uniformly planarizing a microelectronic substrate Jan. 23, 2001
6174454 Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant Jan. 16, 2001
6171180 Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface Jan. 9, 2001
6171962 Shallow trench isolation formation without planarization mask Jan. 9, 2001
6171976 Method of chemical-mechanical polishing Jan. 9, 2001
6171436 Apparatus for removing slurry particles Jan. 9, 2001
6171514 Polishing method for planarizing a substrate Jan. 9, 2001
6171963 Method for forming a planar intermetal dielectric using a barrier layer Jan. 9, 2001
6165915 Forming halogen doped glass dielectric layer with enhanced stability Dec. 26, 2000
6162583 Method for making intermetal dielectrics (IMD) on semiconductor integrated circuits using low dielectric constant spin-on polymers Dec. 19, 2000
6159858 Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry Dec. 12, 2000
6156637 Method of planarizing a semiconductor device by depositing a dielectric ply structure Dec. 5, 2000
6156631 Method of manufacturing semiconductor device Dec. 5, 2000
6153526 Method to remove residue in wolfram CMP Nov. 28, 2000
6152148 Method for cleaning semiconductor wafers containing dielectric films Nov. 28, 2000
6153525 Methods for chemical mechanical polish of organic polymer dielectric films Nov. 28, 2000
6150271 Differential temperature control in chemical mechanical polishing processes Nov. 21, 2000
6150274 Method of enhancing CMP removal rate of polymer-like material and improving planarization in integrated circuit structure Nov. 21, 2000
6147001 Method of manufacturing semiconductor integrated circuit device Nov. 14, 2000
6146250 Process for forming a semiconductor device Nov. 14, 2000
6143646 Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation Nov. 7, 2000
6140216 Post etch silicide formation using dielectric etchback after global planarization Oct. 31, 2000
6140240 Method for eliminating CMP induced microscratches Oct. 31, 2000
6136138 Method and apparatus for chemical mechanical polishing of a semiconductor wafer Oct. 24, 2000
6133106 Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement Oct. 17, 2000
6130127 Method for making dynamic random access memory cells having cactus-shaped stacked capacitors with increased capacitance Oct. 10, 2000
6125861 Post-CMP wet-HF cleaning station Oct. 3, 2000
6126518 Chemical mechanical polishing process for layers of semiconductor or isolating materials Oct. 3, 2000
6120348 Polishing system Sep. 19, 2000
6120354 Method of chemical mechanical polishing Sep. 19, 2000
6121147 Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance Sep. 19, 2000
6120571 Polishing agent for semiconductor and method for its production Sep. 19, 2000
6121146 Method for forming contact plugs of a semiconductor device Sep. 19, 2000
6117763 Method of manufacturing a semiconductor device with a low permittivity dielectric layer and contamination due to exposure to water Sep. 12, 2000
6117740 Method of forming a shallow trench isolation by using PE-oxide and PE-nitride multi-layer Sep. 12, 2000
6117766 Method of forming contact plugs in a semiconductor device Sep. 12, 2000
6117777 Chemical mechanical polish (CMP) endpoint detection by colorimetry Sep. 12, 2000
6117778 Semiconductor wafer edge bead removal method and tool Sep. 12, 2000
6117779 Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint Sep. 12, 2000

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

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