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Class Information
Number: 257/E21.243
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Planarization of insulating layer (epo)
Description: This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3105B.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.244 Involving dielectric removal step (epo) 942

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
6261975 Method for depositing and planarizing fluorinated BPSG films Jul. 17, 2001
6251805 Method of fabricating semiconductor device Jun. 26, 2001
6251795 Method for depositing high density plasma chemical vapor deposition oxide with improved topography Jun. 26, 2001
6242355 Method for insulating metal conductors by spin-on-glass and devices made Jun. 5, 2001
6239034 Method of manufacturing inter-metal dielectric layers for semiconductor devices May. 29, 2001
6235354 Method of forming a level silicon oxide layer on two regions of different heights on a semiconductor wafer May. 22, 2001
6235647 Deposition process for forming void-free dielectric layer May. 22, 2001
6232245 Method of forming interlayer film May. 15, 2001
6228741 Method for trench isolation of semiconductor devices May. 8, 2001
6225240 Rapid acceleration methods for global planarization of spin-on films May. 1, 2001
6225236 Method for reforming undercoating surface and method for production of semiconductor device May. 1, 2001
6221756 Method of forming interlayer film Apr. 24, 2001
6218316 Planarization of non-planar surfaces in device fabrication Apr. 17, 2001
6211097 Planarization process Apr. 3, 2001
6207585 Method of forming stacked insulating film and semiconductor device using the same Mar. 27, 2001
6204196 Method of forming a film having enhanced reflow characteristics at low thermal budget Mar. 20, 2001
6194038 Method for deposition of a conformal layer on a substrate Feb. 27, 2001
6194305 Planarization using plasma oxidized amorphous silicon Feb. 27, 2001
6190233 Method and apparatus for improving gap-fill capability using chemical and physical etchbacks Feb. 20, 2001
6187683 Method for final passivation of integrated circuit Feb. 13, 2001
6187093 Apparatus and method for planarization of spin-on materials Feb. 13, 2001
6180540 Method for forming a stabilized fluorosilicate glass layer Jan. 30, 2001
6177344 BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient Jan. 23, 2001
6169040 Method of manufacturing semiconductor device Jan. 2, 2001
6169026 Method for planarization of semiconductor device including pumping out dopants from planarization layer separately from flowing said layer Jan. 2, 2001
6156637 Method of planarizing a semiconductor device by depositing a dielectric ply structure Dec. 5, 2000
6150029 Method of forming a film having enhanced reflow characteristics at low thermal budget Nov. 21, 2000
6136726 Method of forming interlayer film by altering fluidity of deposited layers Oct. 24, 2000
6136665 Method for forming a recess-free buffer layer Oct. 24, 2000
6137176 Semiconductor device and method of fabricating the same Oct. 24, 2000
6124215 Apparatus and method for planarization of spin-on materials Sep. 26, 2000
6124640 Scalable and reliable integrated circuit inter-level dielectric Sep. 26, 2000
6121117 Process for producing semiconductor substrate by heat treating Sep. 19, 2000
6110814 Film forming method and semiconductor device manufacturing method Aug. 29, 2000
6103638 Formation of planar dielectric layers using liquid interfaces Aug. 15, 2000
6093634 Method of forming a dielectric layer on a semiconductor wafer Jul. 25, 2000
6087191 Method for repairing surface defects Jul. 11, 2000
6077789 Method for forming a passivation layer with planarization Jun. 20, 2000
6075428 Magnetic system for an electromagnetic relay Jun. 13, 2000
6054397 BPSG planarization method having improved planarity and reduced chatter mark defects Apr. 25, 2000
6048801 Method of forming interlayer film Apr. 11, 2000
6049134 Mask generation technique for producing an integrated circuit with optimal metal interconnect layout for achieving global planarization Apr. 11, 2000
6040020 Method of forming a film having enhanced reflow characteristics at low thermal budget Mar. 21, 2000
6033921 Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface Mar. 7, 2000
6013583 Low temperature BPSG deposition process Jan. 11, 2000
5990000 Method and apparatus for improving gap-fill capability using chemical and physical etchbacks Nov. 23, 1999
5989998 Method of forming interlayer insulating film Nov. 23, 1999
5986330 Enhanced planarization technique for an integrated circuit Nov. 16, 1999
5985769 Method of forming an interlayer insulating film Nov. 16, 1999
5981397 Integrated circuitry having a pair of adjacent conductive lines and method of forming Nov. 9, 1999

1 2 3 4 5 6

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