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Class Information
Number: 257/E21.242
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Of organic layer (epo)
Description: This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3105P.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
6558756 Method of forming interlayer insulating film May. 6, 2003
6537908 Method for dual-damascence patterning of low-k interconnects using spin-on distributed hardmask Mar. 25, 2003
6528432 H2-or H2/N2-plasma treatment to prevent organic ILD degradation Mar. 4, 2003
6521547 Method of repairing a low dielectric constant material layer Feb. 18, 2003
6518172 Method for applying uniform pressurized film across wafer Feb. 11, 2003
6511904 Reverse mask and nitride layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems Jan. 28, 2003
6509279 Methods for processing a coating film and for manufacturing a semiconductor element Jan. 21, 2003
6503818 Delamination resistant multi-layer composite dielectric layer employing low dielectric constant dielectric material Jan. 7, 2003
6486079 Method for stabilizing low dielectric constant materials Nov. 26, 2002
6464740 Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials Oct. 15, 2002
6455428 Method of forming a metal silicide layer Sep. 24, 2002
6448655 Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation Sep. 10, 2002
6444136 Fabrication of improved low-k dielectric structures Sep. 3, 2002
6440638 Method and apparatus for resist planarization Aug. 27, 2002
6435943 Method of chemical mechanical polishing organic silicon material with low dielectric constant Aug. 20, 2002
6422918 Chemical-mechanical polishing of photoresist layer Jul. 23, 2002
6419985 Method for producing insulator film Jul. 16, 2002
6417118 Method for improving the moisture absorption of porous low dielectric film Jul. 9, 2002
6388934 Semiconductor memory device operating at high speed with low current consumption May. 14, 2002
6383927 Process for fabricating semiconductor device, apparatus using more than one kind of inert gas for evacuating air and method for entering wafer into the apparatus May. 7, 2002
6368906 Method of planarization using selecting curing of SOG layer Apr. 9, 2002
6364953 Method and apparatus for making aerogel film Apr. 2, 2002
6358853 Ceria based slurry for chemical-mechanical polishing Mar. 19, 2002
6350694 Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials Feb. 26, 2002
6348407 Method to improve adhesion of organic dielectrics in dual damascene interconnects Feb. 19, 2002
6331481 Damascene etchback for low .epsilon. dielectric Dec. 18, 2001
6315637 Photoresist removal using a polishing tool Nov. 13, 2001
6303524 High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques Oct. 16, 2001
6303192 Process to improve adhesion of PECVD cap layers in integrated circuits Oct. 16, 2001
6296906 Annealing process for low-k dielectric film Oct. 2, 2001
6284050 UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition Sep. 4, 2001
6251806 Method to improve the roughness of metal deposition on low-k material Jun. 26, 2001
6251788 Method of integrated circuit polishing without dishing effects Jun. 26, 2001
6207554 Gap filling process in integrated circuits using low dielectric constant materials Mar. 27, 2001
6200913 Cure process for manufacture of low dielectric constant interlevel dielectric layers Mar. 13, 2001
6197704 Method of fabricating semiconductor device Mar. 6, 2001
6177143 Electron beam treatment of siloxane resins Jan. 23, 2001
6168907 Method for etching semiconductor device Jan. 2, 2001
6169039 Electron bean curing of low-k dielectrics in integrated circuits Jan. 2, 2001
6156671 Method for improving characteristic of dielectric material Dec. 5, 2000
6153512 Process to improve adhesion of HSQ to underlying materials Nov. 28, 2000
6150274 Method of enhancing CMP removal rate of polymer-like material and improving planarization in integrated circuit structure Nov. 21, 2000
6121130 Laser curing of spin-on dielectric thin films Sep. 19, 2000
6121144 Low temperature chemical mechanical polishing of dielectric materials Sep. 19, 2000
6117798 Method of spin-on-glass planarization Sep. 12, 2000
6087724 HSQ with high plasma etching resistance surface for borderless vias Jul. 11, 2000
6083851 HSQ with high plasma etching resistance surface for borderless vias Jul. 4, 2000
6071806 Method for preventing poisoned vias and trenches Jun. 6, 2000
6066574 Hot plate cure process for BCB low k interlevel dielectric May. 23, 2000
6043147 Method of prevention of degradation of low dielectric constant gap-fill material Mar. 28, 2000

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