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Class Information
Number: 257/E21.242
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo) > Of organic layer (epo)
Description: This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3105P.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6558756 |
Method of forming interlayer insulating film |
May. 6, 2003 |
| 6537908 |
Method for dual-damascence patterning of low-k interconnects using spin-on distributed hardmask |
Mar. 25, 2003 |
| 6528432 |
H2-or H2/N2-plasma treatment to prevent organic ILD degradation |
Mar. 4, 2003 |
| 6521547 |
Method of repairing a low dielectric constant material layer |
Feb. 18, 2003 |
| 6518172 |
Method for applying uniform pressurized film across wafer |
Feb. 11, 2003 |
| 6511904 |
Reverse mask and nitride layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems |
Jan. 28, 2003 |
| 6509279 |
Methods for processing a coating film and for manufacturing a semiconductor element |
Jan. 21, 2003 |
| 6503818 |
Delamination resistant multi-layer composite dielectric layer employing low dielectric constant dielectric material |
Jan. 7, 2003 |
| 6486079 |
Method for stabilizing low dielectric constant materials |
Nov. 26, 2002 |
| 6464740 |
Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials |
Oct. 15, 2002 |
| 6455428 |
Method of forming a metal silicide layer |
Sep. 24, 2002 |
| 6448655 |
Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation |
Sep. 10, 2002 |
| 6444136 |
Fabrication of improved low-k dielectric structures |
Sep. 3, 2002 |
| 6440638 |
Method and apparatus for resist planarization |
Aug. 27, 2002 |
| 6435943 |
Method of chemical mechanical polishing organic silicon material with low dielectric constant |
Aug. 20, 2002 |
| 6422918 |
Chemical-mechanical polishing of photoresist layer |
Jul. 23, 2002 |
| 6419985 |
Method for producing insulator film |
Jul. 16, 2002 |
| 6417118 |
Method for improving the moisture absorption of porous low dielectric film |
Jul. 9, 2002 |
| 6388934 |
Semiconductor memory device operating at high speed with low current consumption |
May. 14, 2002 |
| 6383927 |
Process for fabricating semiconductor device, apparatus using more than one kind of inert gas for evacuating air and method for entering wafer into the apparatus |
May. 7, 2002 |
| 6368906 |
Method of planarization using selecting curing of SOG layer |
Apr. 9, 2002 |
| 6364953 |
Method and apparatus for making aerogel film |
Apr. 2, 2002 |
| 6358853 |
Ceria based slurry for chemical-mechanical polishing |
Mar. 19, 2002 |
| 6350694 |
Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials |
Feb. 26, 2002 |
| 6348407 |
Method to improve adhesion of organic dielectrics in dual damascene interconnects |
Feb. 19, 2002 |
| 6331481 |
Damascene etchback for low .epsilon. dielectric |
Dec. 18, 2001 |
| 6315637 |
Photoresist removal using a polishing tool |
Nov. 13, 2001 |
| 6303524 |
High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques |
Oct. 16, 2001 |
| 6303192 |
Process to improve adhesion of PECVD cap layers in integrated circuits |
Oct. 16, 2001 |
| 6296906 |
Annealing process for low-k dielectric film |
Oct. 2, 2001 |
| 6284050 |
UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
Sep. 4, 2001 |
| 6251806 |
Method to improve the roughness of metal deposition on low-k material |
Jun. 26, 2001 |
| 6251788 |
Method of integrated circuit polishing without dishing effects |
Jun. 26, 2001 |
| 6207554 |
Gap filling process in integrated circuits using low dielectric constant materials |
Mar. 27, 2001 |
| 6200913 |
Cure process for manufacture of low dielectric constant interlevel dielectric layers |
Mar. 13, 2001 |
| 6197704 |
Method of fabricating semiconductor device |
Mar. 6, 2001 |
| 6177143 |
Electron beam treatment of siloxane resins |
Jan. 23, 2001 |
| 6168907 |
Method for etching semiconductor device |
Jan. 2, 2001 |
| 6169039 |
Electron bean curing of low-k dielectrics in integrated circuits |
Jan. 2, 2001 |
| 6156671 |
Method for improving characteristic of dielectric material |
Dec. 5, 2000 |
| 6153512 |
Process to improve adhesion of HSQ to underlying materials |
Nov. 28, 2000 |
| 6150274 |
Method of enhancing CMP removal rate of polymer-like material and improving planarization in integrated circuit structure |
Nov. 21, 2000 |
| 6121130 |
Laser curing of spin-on dielectric thin films |
Sep. 19, 2000 |
| 6121144 |
Low temperature chemical mechanical polishing of dielectric materials |
Sep. 19, 2000 |
| 6117798 |
Method of spin-on-glass planarization |
Sep. 12, 2000 |
| 6087724 |
HSQ with high plasma etching resistance surface for borderless vias |
Jul. 11, 2000 |
| 6083851 |
HSQ with high plasma etching resistance surface for borderless vias |
Jul. 4, 2000 |
| 6071806 |
Method for preventing poisoned vias and trenches |
Jun. 6, 2000 |
| 6066574 |
Hot plate cure process for BCB low k interlevel dielectric |
May. 23, 2000 |
| 6043147 |
Method of prevention of degradation of low dielectric constant gap-fill material |
Mar. 28, 2000 |
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