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Class Information
Number: 257/E21.241
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Post-treatment (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/3105.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.247 Doping insulating layer (epo) 71
257/E21.249 Etching insulating layer by chemical or physical means (epo) 125
257/E21.242 Of organic layer (epo) 201
257/E21.243 Planarization of insulating layer (epo) 259

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8629508 Semiconductor device and method of manufacture Jan. 14, 2014
8525166 Zinc-tin oxide thin-film transistors Sep. 3, 2013
8507390 Methods and devices for forming nanostructure monolayers and devices including such monolayers Aug. 13, 2013
8502286 Etch stop layers and methods of forming the same Aug. 6, 2013
8481429 Method of manufacturing semiconductor device Jul. 9, 2013
8445377 Mechanically robust metal/low-k interconnects May. 21, 2013
8440578 GCIB process for reducing interfacial roughness following pre-amorphization May. 14, 2013
8415252 Selective copper encapsulation layer deposition Apr. 9, 2013
8354345 Method for forming side contact in semiconductor device through self-aligned damascene process Jan. 15, 2013
8329552 Semiconductor device and method of manufacture Dec. 11, 2012
8304351 In-situ ozone cure for radical-component CVD Nov. 6, 2012
8114786 Heat treatment method, heat treatment apparatus and substrate processing apparatus Feb. 14, 2012
8110502 Method of improving adhesion strength of low dielectric constant layers Feb. 7, 2012
8021950 Semiconductor wafer processing method that allows device regions to be selectively annealed following back end of the line (BEOL) metal wiring layer formation Sep. 20, 2011
8017522 Mechanically robust metal/low-.kappa. interconnects Sep. 13, 2011
7998875 Vapor phase repair and pore sealing of low-K dielectric materials Aug. 16, 2011
7998882 Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step Aug. 16, 2011
7867797 Method of fabricating organic light emitting diode display device Jan. 11, 2011
7858535 Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ALD) processes and methods of fabricating semiconductor structures Dec. 28, 2010
7833913 Method of forming crystallographically stabilized doped hafnium zirconium based films Nov. 16, 2010
7816253 Surface treatment of inter-layer dielectric Oct. 19, 2010
7759259 Method of manufacturing semiconductor device Jul. 20, 2010
7745351 Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO.sub.2 Jun. 29, 2010
7723237 Method for selective removal of damaged multi-stack bilayer films May. 25, 2010
7691740 Semiconductor device and method of fabricating same Apr. 6, 2010
7662730 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof Feb. 16, 2010
7659206 Removal of silicon oxycarbide from substrates Feb. 9, 2010
7649264 Hard mask for low-k interlayer dielectric patterning Jan. 19, 2010
7629273 Method for modulating stresses of a contact etch stop layer Dec. 8, 2009
7622378 Multi-step system and method for curing a dielectric film Nov. 24, 2009
7569499 Semiconductor device made by multiple anneal of stress inducing layer Aug. 4, 2009
7537971 Method for fabricating CMOS image sensor May. 26, 2009
7538001 Transistor gate forming methods and integrated circuits May. 26, 2009
7507677 Removable amorphous carbon CMP stop Mar. 24, 2009
7479465 Transfer of stress to a layer Jan. 20, 2009
7459391 Semiconductor device and method of fabricating the same Dec. 2, 2008
7405168 Plural treatment step process for treating dielectric films Jul. 29, 2008
7396724 Dual-hybrid liner formation without exposing silicide layer to photoresist stripping chemicals Jul. 8, 2008
7323729 Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor Jan. 29, 2008
7312138 Semiconductor device and method of manufacture thereof Dec. 25, 2007
7262142 Semiconductor device fabrication method Aug. 28, 2007
7223705 Ambient gas treatment of porous dielectric May. 29, 2007
7074625 Semiconductor device and method of manufacturing the same Jul. 11, 2006
7064052 Method of processing a transistor gate dielectric film with stem Jun. 20, 2006
7056835 Surface preparation prior to deposition Jun. 6, 2006
7052997 Method to form etch and/or CMP stop layers May. 30, 2006
7030023 Method for simultaneous degas and baking in copper damascene process Apr. 18, 2006
7030009 Method for forming metal interconnect in a carbon containing silicon oxide film Apr. 18, 2006
7022623 Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process Apr. 4, 2006
7022602 Nitrogen-enriched low-k barrier layer for a copper metallization layer Apr. 4, 2006

1 2 3 4 5 6 7 8 9 10 11

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