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Class Information
Number: 257/E21.226
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Chemical or electrical treatment, e.g., electrolytic etching (epo) > Chemical cleaning (epo) > Dry cleaning (epo)
Description: This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.227 With gaseous hydrogen fluoride (hf) (epo) 125

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5753530 Impurity doping method with diffusion source of boron-silicide film May. 19, 1998
5749975 Process for dry cleaning wafer surfaces using a surface diffusion layer May. 12, 1998
5735962 Silicon substrate cleaning method and apparatus Apr. 7, 1998
5731243 Method of cleaning residue on a semiconductor wafer bonding pad Mar. 24, 1998
5731247 Method for manufacturing a semiconductor device including pre-oxidation process Mar. 24, 1998
5725677 Dry cleaning process for cleaning a surface Mar. 10, 1998
5723383 Semiconductor substrate treatment method Mar. 3, 1998
5716495 Cleaning method Feb. 10, 1998
5714011 Diluted nitrogen trifluoride thermal cleaning process Feb. 3, 1998
5693183 Method for treating the surface of silicon substrate post dry etching process Dec. 2, 1997
5693578 Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance Dec. 2, 1997
5685916 Dry cleaning of semiconductor processing chambers Nov. 11, 1997
5676759 Plasma dry cleaning of semiconductor processing chambers Oct. 14, 1997
5669979 Photoreactive surface processing Sep. 23, 1997
5660682 Plasma clean with hydrogen gas Aug. 26, 1997
5650015 Dry method for cleaning semiconductor substrate Jul. 22, 1997
5643472 Selective removal of material by irradiation Jul. 1, 1997
5627105 Plasma etch process and TiSi.sub.x layers made using the process May. 6, 1997
5599425 Predecomposition of organic chlorides for silicon processing Feb. 4, 1997
5589422 Controlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer Dec. 31, 1996
5580421 Apparatus for surface conditioning Dec. 3, 1996
5578133 Dry cleaning process for cleaning a surface Nov. 26, 1996
5560777 Apparatus for making a semiconductor Oct. 1, 1996
5554257 Method of treating surfaces with atomic or molecular beam Sep. 10, 1996
5534107 UV-enhanced dry stripping of silicon nitride films Jul. 9, 1996
5531857 Removal of surface contaminants by irradiation from a high energy source Jul. 2, 1996
5531862 Method of and apparatus for removing foreign particles Jul. 2, 1996
5516369 Method and apparatus for particle reduction from semiconductor wafers May. 14, 1996
5510277 Surface treatment for silicon substrates Apr. 23, 1996
5508800 Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate Apr. 16, 1996
5499668 Process for making electronic device Mar. 19, 1996
5496506 Process for removing fine particles Mar. 5, 1996
5494526 Method for cleaning semiconductor wafers using liquified gases Feb. 27, 1996
5486235 Plasma dry cleaning of semiconductor processing chambers Jan. 23, 1996
5480492 Method for removing organic or inorganic contaminant from silicon substrate surface Jan. 2, 1996
5474615 Method for cleaning semiconductor devices Dec. 12, 1995
5470799 Method for pretreating semiconductor substrate by photochemically removing native oxide Nov. 28, 1995
5466303 Semiconductor device and manufacturing method therefor Nov. 14, 1995
5464664 Downstream ammonia plasma passivation of GaAs Nov. 7, 1995
5460689 High pressure plasma treatment method and apparatus Oct. 24, 1995
5459326 Method for surface treatment with extra-low-speed ion beam Oct. 17, 1995
5451267 Process for the wet-chemical treatment of disk-shaped workpieces Sep. 19, 1995
5441599 Lightly doped drain etch method for semiconductor manufacture Aug. 15, 1995
5424103 Method for making a semiconductor using corona discharge Jun. 13, 1995
5423918 Method for reducing particulate contamination during plasma processing of semiconductor devices Jun. 13, 1995
5413954 Method of making a silicon-based device comprising surface plasma cleaning May. 9, 1995
5413670 Method for plasma etching or cleaning with diluted NF.sub.3 May. 9, 1995
5403436 Plasma treating method using hydrogen gas Apr. 4, 1995
5403434 Low-temperature in-situ dry cleaning process for semiconductor wafer Apr. 4, 1995
5396862 Method of manufacturing a compound semiconductor Mar. 14, 1995

1 2 3 4 5 6 7 8

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