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Class Information
Number: 257/E21.226
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Chemical or electrical treatment, e.g., electrolytic etching (epo) > Chemical cleaning (epo) > Dry cleaning (epo)
Description: This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.227 With gaseous hydrogen fluoride (hf) (epo) 125


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
6479443 Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film Nov. 12, 2002
6465374 Method of surface preparation Oct. 15, 2002
6457478 Method for treating an object using ultra-violet light Oct. 1, 2002
6444585 Method for manufacturing semiconductor device capable of expelling argon gas Sep. 3, 2002
6440864 Substrate cleaning process Aug. 27, 2002
6432830 Semiconductor fabrication process Aug. 13, 2002
6417041 Method for fabricating high permitivity dielectric stacks having low buffer oxide Jul. 9, 2002
6410454 Method and apparatus for removing contaminants from the surface of a semiconductor wafer Jun. 25, 2002
6400029 Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structures Jun. 4, 2002
6395192 Method and apparatus for removing native oxide layers from silicon wafers May. 28, 2002
6395693 Cleaning solution for semiconductor surfaces following chemical-mechanical polishing May. 28, 2002
6394104 Method of controlling and improving SOG etchback etcher May. 28, 2002
6391118 Method for removing particles from surface of article May. 21, 2002
6387827 Method for growing thin silicon oxides on a silicon substrate using chlorine precursors May. 14, 2002
6376384 Multiple etch contact etching method incorporating post contact etch etching Apr. 23, 2002
6371134 Ozone cleaning of wafers Apr. 16, 2002
6372650 Method of cleaning substrate and method of manufacturing semiconductor device Apr. 16, 2002
6372657 Method for selective etching of oxides Apr. 16, 2002
6365496 Elimination of junction spiking using soft sputter etch and two step tin film during the contact barrier deposition process Apr. 2, 2002
6365516 Advanced cobalt silicidation with in-situ hydrogen plasma clean Apr. 2, 2002
6358859 HBr silicon etching process Mar. 19, 2002
6355571 Method and apparatus for reducing copper oxidation and contamination in a semiconductor device Mar. 12, 2002
6350689 Method to remove copper contamination by using downstream oxygen and chelating agent plasma Feb. 26, 2002
6348409 Self aligned contact plug technology Feb. 19, 2002
6348099 Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions Feb. 19, 2002
6336970 Surface preparation method and semiconductor device Jan. 8, 2002
6325078 Apparatus and method for rapid photo-thermal surface treatment Dec. 4, 2001
6323121 Fully dry post-via-etch cleaning method for a damascene process Nov. 27, 2001
6319861 Method of improving deposition Nov. 20, 2001
6313042 Cleaning contact with successive fluorine and hydrogen plasmas Nov. 6, 2001
6303522 Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor Oct. 16, 2001
6294027 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film Sep. 25, 2001
6287413 Apparatus for processing both sides of a microelectronic device precursor Sep. 11, 2001
6287991 Method for producing semiconductor device including step for removing contaminant Sep. 11, 2001
6284664 Semiconductor device, and manufacturing method therefor Sep. 4, 2001
6277767 Method for cleaning semiconductor device Aug. 21, 2001
6277733 Oxygen-free, dry plasma process for polymer removal Aug. 21, 2001
6261955 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes Jul. 17, 2001
6258637 Method for thin film deposition on single-crystal semiconductor substrates Jul. 10, 2001
6240931 Method for removing particles from a surface of an article Jun. 5, 2001
6242368 Removal of carbon from substrate surface Jun. 5, 2001
6239006 Native oxide removal with fluorinated chemistry before cobalt silicide formation May. 29, 2001
6235645 Process for cleaning silicon semiconductor substrates May. 22, 2001
6232219 Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structures May. 15, 2001
6228166 Method for boron contamination reduction in IC fabrication May. 8, 2001
6225169 High density plasma nitridation as diffusion barrier and interface defect densities reduction for gate dielectric May. 1, 2001
6205676 Method and apparatus for removing particles from surface of article Mar. 27, 2001
6204192 Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures Mar. 20, 2001
6197694 In situ method for cleaning silicon surface and forming layer thereon in same chamber Mar. 6, 2001
6197388 Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer Mar. 6, 2001

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