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Class Information
Number: 257/E21.226
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Chemical or electrical treatment, e.g., electrolytic etching (epo) > Chemical cleaning (epo) > Dry cleaning (epo)
Description: This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.227 With gaseous hydrogen fluoride (hf) (epo) 125


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8703605 High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability Apr. 22, 2014
8470095 Process and installation for surface preparation by dielectric barrier discharge Jun. 25, 2013
8420544 Method for fabricating interconnection structure with dry-cleaning process Apr. 16, 2013
8404052 Method for cleaning the surface of a silicon substrate Mar. 26, 2013
8389389 Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus, and semiconductor device manufactured using such method and apparatus Mar. 5, 2013
8268675 Passivation layer for semiconductor device packaging Sep. 18, 2012
8242498 Compound semiconductor substrate, semiconductor device, and processes for producing them Aug. 14, 2012
8207060 High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability Jun. 26, 2012
8153527 Method for reducing sidewall etch residue Apr. 10, 2012
7993938 Highly doped III-nitride semiconductors Aug. 9, 2011
7994066 Si surface cleaning for semiconductor circuits Aug. 9, 2011
7927988 Method of fabricating semiconductor device Apr. 19, 2011
7863609 Compound semiconductor substrate, semiconductor device, and processes for producing them Jan. 4, 2011
7846845 Integrated method for removal of halogen residues from etched substrates in a processing system Dec. 7, 2010
7829457 Protection of conductors from oxidation in deposition chambers Nov. 9, 2010
7825026 Method for processing copper surface, method for forming copper pattern wiring and semiconductor device manufactured using such method Nov. 2, 2010
7816253 Surface treatment of inter-layer dielectric Oct. 19, 2010
7790477 Apparatus and method for cleaning glass substrates using a cool hydrogen flame Sep. 7, 2010
7781314 Nitride semiconductor device manufacturing method Aug. 24, 2010
7745337 Method of optimizing sidewall spacer size for silicide proximity with in-situ clean Jun. 29, 2010
7682991 Method of manufacturing silicon carbide semiconductor device Mar. 23, 2010
7670952 Method of manufacturing metal silicide contacts Mar. 2, 2010
7582536 Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same Sep. 1, 2009
7566662 Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layer Jul. 28, 2009
7544603 Method of fabricating silicon nitride layer and method of fabricating semiconductor device Jun. 9, 2009
7524769 Method and system for removing an oxide from a substrate Apr. 28, 2009
7514357 Method of manufacturing a semiconductor device Apr. 7, 2009
7504267 Apparatus and method for cleaning glass substrates using a cool hydrogen flame Mar. 17, 2009
7479416 Thin film transistor array panel and manufacturing method thereof Jan. 20, 2009
7476609 Forming of a cavity in an insulating layer Jan. 13, 2009
7452822 Via plug formation in dual damascene process Nov. 18, 2008
7452810 Method of forming a barrier layer of a semiconductor device Nov. 18, 2008
7442639 Method of forming plug of semiconductor device Oct. 28, 2008
7432208 Method of manufacturing suspension structure Oct. 7, 2008
7393784 Method of manufacturing suspension structure and chamber Jul. 1, 2008
7342290 Semiconductor metal contamination reduction for ultra-thin gate dielectrics Mar. 11, 2008
7335521 Method for the production of multilayer discs Feb. 26, 2008
7276447 Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material Oct. 2, 2007
7208428 Method and apparatus for treating article to be treated Apr. 24, 2007
7169704 Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device Jan. 30, 2007
7071095 Barrier metal re-distribution process for resistivity reduction Jul. 4, 2006
7067399 Method and apparatus for removal of surface contaminants from substrates in vacuum applications Jun. 27, 2006
7067433 Method to reduce the fluorine contamination on the Al/Al-Cu pad by a post high cathod temperature plasma treatment Jun. 27, 2006
7056809 Method for ion treating a semiconductor material for subsequent bonding Jun. 6, 2006
7055532 Method to remove fluorine residue from bond pads Jun. 6, 2006
7018925 Post high voltage gate oxide pattern high-vacuum outgas surface treatment Mar. 28, 2006
7018929 Method for reducing a low volatility byproduct from a wafer surface following an etching process Mar. 28, 2006
6992011 Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma Jan. 31, 2006
6979611 Method for fabricating semiconductor device Dec. 27, 2005
6979633 Method of manufacturing semiconductor device Dec. 27, 2005

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