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Class Information
Number: 257/E21.221
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Chemical or electrical treatment, e.g., electrolytic etching (epo) > Chemical etching (epo) > Etching of group iii-v compound (epo) > Anisotropic liquid etching (epo)
Description: This subclass is indented under subclass E21.22. This subclass is substantially the same in scope as ECLA classification H01L21/306B4B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7332386 |
Methods of fabricating fin field transistors |
Feb. 19, 2008 |
| 7294566 |
Method for forming wiring pattern, method for manufacturing device, device, electro-optic apparatus, and electronic equipment |
Nov. 13, 2007 |
| 7241632 |
MTJ read head with sidewall spacers |
Jul. 10, 2007 |
| 7235495 |
Controlled growth of highly uniform, oxide layers, especially ultrathin layers |
Jun. 26, 2007 |
| 7192882 |
Component for electromagnetic waves and a method for manufacturing the same |
Mar. 20, 2007 |
| 6987068 |
Methods to planarize semiconductor device and passivation layer |
Jan. 17, 2006 |
| 6927146 |
Chemical thinning of epitaxial silicon layer over buried oxide |
Aug. 9, 2005 |
| 6924162 |
Process of manufacturing a semiconductor device |
Aug. 2, 2005 |
| 6872253 |
Method of forming a semiconductor component |
Mar. 29, 2005 |
| 6810059 |
Semiconductor laser and method of manufacturing the same |
Oct. 26, 2004 |
| 6605548 |
Process for etching gallium nitride compound based semiconductors |
Aug. 12, 2003 |
| 6459120 |
Semiconductor device and manufacturing method of the same |
Oct. 1, 2002 |
| 6333236 |
Semiconductor device and method for manufacturing same |
Dec. 25, 2001 |
| 6294475 |
Crystallographic wet chemical etching of III-nitride material |
Sep. 25, 2001 |
| 6156665 |
Trilayer lift-off process for semiconductor device metallization |
Dec. 5, 2000 |
| 5972236 |
Etchant, etching method using the same, and related etching apparatus |
Oct. 26, 1999 |
| 5919715 |
Method for cleaning a semiconductor surface |
Jul. 6, 1999 |
| 5824453 |
Fabricating method of GaAs substrate having V-shaped grooves |
Oct. 20, 1998 |
| 5770475 |
Crystal growth method for compound semiconductor |
Jun. 23, 1998 |
| 5723360 |
Method of processing an epitaxial wafer of InP or the like |
Mar. 3, 1998 |
| 5698063 |
Intermediate workpiece employing a mask for etching an aperture aligned with the crystal planes in the workpiece substrate |
Dec. 16, 1997 |
| 5484507 |
Self compensating process for aligning an aperture with crystal planes in a substrate |
Jan. 16, 1996 |
| 5399230 |
Method and apparatus for etching compound semiconductor |
Mar. 21, 1995 |
| 5272114 |
Method for cleaving a semiconductor crystal body |
Dec. 21, 1993 |
| 5250471 |
Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light |
Oct. 5, 1993 |
| 4994142 |
Eliminating undercutting of mask material when etching semiconductor topography by native oxide removal |
Feb. 19, 1991 |
| 4873558 |
Group III-V compound field effect transistor with diffusion barrier |
Oct. 10, 1989 |
| 4797374 |
Method for selective heteroepitaxial III-V compound growth |
Jan. 10, 1989 |
| 4675074 |
Method of manufacturing semiconductor device |
Jun. 23, 1987 |
| 4670093 |
Method for manufacturing a surface grating of a defined grating constant on regions of a mesa structure |
Jun. 2, 1987 |
| 4665525 |
Means for a self-aligned multilayer laser epitaxy structure device |
May. 12, 1987 |
| 4652333 |
Etch process monitors for buried heterostructures |
Mar. 24, 1987 |
| 4640003 |
Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment |
Feb. 3, 1987 |
| 4630093 |
Wafer of semiconductors |
Dec. 16, 1986 |
| 4628016 |
Mirror wafer of compound semiconductor |
Dec. 9, 1986 |
| 4623427 |
Means and method for a self-aligned multilayer laser epitaxy structure device |
Nov. 18, 1986 |
| 4606113 |
Method of manufacturing metal-semiconductor field effect transistors using orientation dependent etched recesses of different depths |
Aug. 19, 1986 |
| 4600934 |
Method of undercut anisotropic etching of semiconductor material |
Jul. 15, 1986 |
| 4595454 |
Fabrication of grooved semiconductor devices |
Jun. 17, 1986 |
| 4439268 |
Orientation of INP substrate wafers |
Mar. 27, 1984 |
| 4397711 |
Crystallographic etching of III-V semiconductor materials |
Aug. 9, 1983 |
| 4396459 |
Method and solution for etching indium antimonide |
Aug. 2, 1983 |
| 4371968 |
Monolithic injection laser arrays formed by crystal regrowth techniques |
Feb. 1, 1983 |
| 4354898 |
Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
Oct. 19, 1982 |
| 4248683 |
Localized anodic thinning |
Feb. 3, 1981 |
| 4237601 |
Method of cleaving semiconductor diode laser wafers |
Dec. 9, 1980 |
| 4236296 |
Etch method of cleaving semiconductor diode laser wafers |
Dec. 2, 1980 |
| 4099305 |
Fabrication of mesa devices by MBE growth over channeled substrates |
Jul. 11, 1978 |
| 4080245 |
Process for manufacturing a gallium phosphide electroluminescent device |
Mar. 21, 1978 |
| 4029531 |
Method of forming grooves in the [011] crystalline direction |
Jun. 14, 1977 |
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