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Class Information
Number: 257/E21.213
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > Hydrogenation or deuterization, e.g., using atomic hydrogen or deuterium from a plasma (epo) > Of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.212. This subclass is substantially the same in scope as ECLA classification H01L21/30H8.

Patents under this class:

Patent Number Title Of Patent Date Issued
8058094 Transistor, method of fabricating the same and organic light emitting display including the transistor Nov. 15, 2011
8048693 Methods and structures for relaxation of strained layers Nov. 1, 2011
7948017 Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same May. 24, 2011
7700954 Transistor, method of fabricating the same and organic light emitting display including the transistor Apr. 20, 2010
7582527 Method for fabricating semiconductor device Sep. 1, 2009
7202182 Method of passivating oxide/compound semiconductor interface Apr. 10, 2007
6025281 Passivation of oxide-compound semiconductor interfaces Feb. 15, 2000
5872031 Enhancement-depletion logic based on gaas mosfets Feb. 16, 1999
5464664 Downstream ammonia plasma passivation of GaAs Nov. 7, 1995
5336533 Method and apparatus for the production of a dissociated atomic particle flow Aug. 9, 1994
5282899 Apparatus for the production of a dissociated atomic particle flow Feb. 1, 1994
5179029 Hydrogen plasma passivation of GaAs Jan. 12, 1993

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