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Class Information
Number: 257/E21.21
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Comprising charge trapping insulator (epo)
Description: This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/28G.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8691648 Methods for fabricating semiconductor memory with process induced strain Apr. 8, 2014
8680601 Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region Mar. 25, 2014
8669606 Semiconductor device and method for manufacturing thereof Mar. 11, 2014
8669622 Non-volatile semiconductor devices and methods of manufacturing non-volatile semiconductor devices Mar. 11, 2014
8637917 Semiconductor devices including vertical channel pattern Jan. 28, 2014
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8604537 Nonvolatile memory device and method of fabricating the same Dec. 10, 2013
8603878 Vertical-type semiconductor devices and methods of manufacturing the same Dec. 10, 2013
8598649 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 3, 2013
8575675 Nonvolatile memory device Nov. 5, 2013
8569822 Memory structure Oct. 29, 2013
8557695 Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device Oct. 15, 2013
8552489 Vertical channel memory devices with nonuniform gate electrodes Oct. 8, 2013
8546216 Nonvolatile semiconductor memory device and method of fabricating the same Oct. 1, 2013
8546867 Non-volatile memory semiconductor device Oct. 1, 2013
8507974 Fin-like field effect transistor (FinFET) non-volatile random access memory (NVRAM) device with bottom erase gate Aug. 13, 2013
8487364 Nonvolatile semiconductor memory device and method for manufacturing same Jul. 16, 2013
8471319 Semiconductor device having multilayered interelectrode insulating film Jun. 25, 2013
8471323 3-D electrically programmable and erasable single-transistor non-volatile semiconductor memory device Jun. 25, 2013
8440531 Methods of forming semiconductor memory devices having vertically stacked memory cells therein May. 14, 2013
8441063 Memory with extended charge trapping layer May. 14, 2013
8426976 Non-volatile semiconductor storage device and method of manufacturing the same Apr. 23, 2013
8426302 Method of manufacturing semiconductor device Apr. 23, 2013
8410543 Semiconductor storage device and manufacturing method thereof Apr. 2, 2013
8378341 Semiconductor device and method of manufacturing semiconductor device Feb. 19, 2013
8372699 Method for forming a split-gate memory cell Feb. 12, 2013
8373222 Nonvolatile semiconductor memory device with alternately stacked isolation dielectric films and electrode films Feb. 12, 2013
8372732 Method for fabricating non-volatile memory device Feb. 12, 2013
8350291 Modulation-doped multi-gate devices Jan. 8, 2013
8344446 Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion Jan. 1, 2013
8329535 Multi-level-cell trapping DRAM Dec. 11, 2012
8329598 Sacrificial nitride and gate replacement Dec. 11, 2012
8318591 Nonvolatile memory device with dielectric layer formed on control gate sidewall along lateral direction Nov. 27, 2012
8318566 Method to seperate storage regions in the mirror bit device Nov. 27, 2012
8300448 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device Oct. 30, 2012
8293633 Method of manufacturing nonvolatile memory device Oct. 23, 2012
8294224 Devices and methods to improve carrier mobility Oct. 23, 2012
8273646 Non-volatile memory device Sep. 25, 2012
8263465 Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer Sep. 11, 2012
8263458 Process margin engineering in charge trapping field effect transistors Sep. 11, 2012
8258034 Charge-trap based memory Sep. 4, 2012
8258574 Semiconductor decoupling capacitor device Sep. 4, 2012
8247857 Nonvolatile semiconductor memory device and method for manufacturing same Aug. 21, 2012
8227357 Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same Jul. 24, 2012
8222067 Method of manufacturing multibit electro-mechanical memory device having movable electrode Jul. 17, 2012
8207029 Method for manufacturing semiconductor device Jun. 26, 2012
8193055 Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution Jun. 5, 2012
8183101 Multiple gate transistor having fins with a length defined by the gate electrode May. 22, 2012
8183140 Semiconductor device and method of fabricating the same May. 22, 2012
8178408 Methods of manufacturing charge trap-type non-volatile memory devices May. 15, 2012

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