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Class Information
Number: 257/E21.207
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on nonelemental silicon semiconductor body, e.g., ge, sige, sigec (epo)
Description: This subclass is indented under subclass E21.19. This subclass is substantially the same in scope as ECLA classification H01L21/28E3.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8652892 Implant damage control by in-situ C doping during sige epitaxy for device applications Feb. 18, 2014
8603887 Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium Dec. 10, 2013
8564018 Relaxed silicon germanium substrate with low defect density Oct. 22, 2013
8455858 Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage Jun. 4, 2013
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8426916 Semiconductor integrated circuit devices having different thickness silicon-germanium layers Apr. 23, 2013
8399326 Method of manufacturing memory devices Mar. 19, 2013
8242555 FIN field effect transistor Aug. 14, 2012
8125037 Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage Feb. 28, 2012
8114739 Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same Feb. 14, 2012
8110460 Method for producing stacked and self-aligned components on a substrate Feb. 7, 2012
8093143 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side Jan. 10, 2012
8017504 Transistor having a high-k metal gate stack and a compressively stressed channel Sep. 13, 2011
7986016 Semiconductor device and associated manufacturing methodology for decreasing thermal instability between an insulating layer and a substrate Jul. 26, 2011
7944023 Strained Si formed by anneal May. 17, 2011
7902008 Methods for fabricating a stressed MOS device Mar. 8, 2011
7855127 Method for manufacturing semiconductor substrate Dec. 21, 2010
7838887 Source/drain carbon implant and RTA anneal, pre-SiGe deposition Nov. 23, 2010
7829355 Method for inspecting semiconductor device Nov. 9, 2010
7821033 Semiconductor component comprising a drift zone and a drift control zone Oct. 26, 2010
7799680 Surface preparation prior to deposition on germanium Sep. 21, 2010
7687338 Method of reducing embedded SiGe loss in semiconductor device manufacturing Mar. 30, 2010
7674669 FIN field effect transistor Mar. 9, 2010
7608526 Strained layers within semiconductor buffer structures Oct. 27, 2009
7585752 Process for deposition of semiconductor films Sep. 8, 2009
7560326 Silicon/silcion germaninum/silicon body device with embedded carbon dopant Jul. 14, 2009
7531427 Thermal oxidation of a SiGe layer and applications thereof May. 12, 2009
7510932 Semiconductor devices having a field effect transistor and methods of fabricating the same Mar. 31, 2009
7501331 Low-temperature metal-induced crystallization of silicon-germanium films Mar. 10, 2009
7498662 Dielectric media including surface-treated metal oxide particles Mar. 3, 2009
7435654 Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same Oct. 14, 2008
7396748 Semiconductor device includes gate insulating film having a high dielectric constant Jul. 8, 2008
7361559 Manufacturing method for a MOS transistor comprising layered relaxed and strained SiGe layers as a channel region Apr. 22, 2008
7288802 Virtual body-contacted trigate Oct. 30, 2007
7253061 Method of forming a gate insulator in group III-V nitride semiconductor devices Aug. 7, 2007
7247896 Semiconductor devices having a field effect transistor and methods of fabricating the same Jul. 24, 2007
7202122 Cobalt silicidation process for substrates with a silicon--germanium layer Apr. 10, 2007
7176504 SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer Feb. 13, 2007
7166897 Method and apparatus for performance enhancement in an asymmetrical semiconductor device Jan. 23, 2007
7118973 Method of forming a transistor with a channel region in a layer of composite material Oct. 10, 2006
6982474 Reacted conductive gate electrodes Jan. 3, 2006
6949761 Structure for and method of fabricating a high-mobility field-effect transistor Sep. 27, 2005
6936849 Silicon carbide gate transistor Aug. 30, 2005
6835638 Silicon carbide gate transistor and fabrication process Dec. 28, 2004
6825507 Semiconductor device having high electron mobility comprising a SiGe/Si/SiGe substrate Nov. 30, 2004
6703291 Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions Mar. 9, 2004
6635110 Cyclic thermal anneal for dislocation reduction Oct. 21, 2003
6486520 Structure and method for a large-permittivity gate using a germanium layer Nov. 26, 2002
6352942 Oxidation of silicon on germanium Mar. 5, 2002

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