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Class Information
Number: 257/E21.205
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Characterized by sectional shape, e.g., t-shape, inverted t, spacer (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B20.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5714786 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors Feb. 3, 1998
5710054 Method of forming a shallow junction by diffusion from a silicon-based spacer Jan. 20, 1998
5667632 Method of defining a line width Sep. 16, 1997
5658815 Method of fabricating silicided LDD transistor Aug. 19, 1997
5650343 Self-aligned implant energy modulation for shallow source drain extension formation Jul. 22, 1997
5650342 Method of making a field effect transistor with a T shaped polysilicon gate electrode Jul. 22, 1997
5633522 CMOS transistor with two-layer inverse-T tungsten gate May. 27, 1997
5600168 Semiconductor element and method for fabricating the same Feb. 4, 1997
5599725 Method for fabricating a MOS transistor with two-layer inverse-T tungsten gate structure Feb. 4, 1997
5585295 Method for forming inverse-T gate lightly-doped drain (ITLDD) device Dec. 17, 1996
5583067 Inverse T-gate semiconductor device with self-aligned punchthrough stops and method of fabrication Dec. 10, 1996
5559049 Method of manufacturing a semiconductor device Sep. 24, 1996
5543646 Field effect transistor with a shaped gate electrode Aug. 6, 1996
5472564 Method of dry etching with hydrogen bromide or bromide Dec. 5, 1995
5471080 Field effect transistor with a shaped gate electrode Nov. 28, 1995
5462884 Method of making field effect transistor with T-shaped gate electrode Oct. 31, 1995
5405787 Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions Apr. 11, 1995
5391510 Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps Feb. 21, 1995
5384479 Field effect transistor with T-shaped gate electrode Jan. 24, 1995
5334545 Process for forming self-aligning cobalt silicide T-gates of silicon MOS devices Aug. 2, 1994
5330617 Method for etching integrated-circuit layers to a fixed depth and corresponding integrated circuit Jul. 19, 1994
5316616 Dry etching with hydrogen bromide or bromine May. 31, 1994
5306655 Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions Apr. 26, 1994
5302536 Method of manufacturing a semiconductor device, in which isolated conductor tracks are provided on a surface of a semiconductor body Apr. 12, 1994
5275960 Method of manufacturing MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength Jan. 4, 1994
5276347 Gate overlapping LDD structure Jan. 4, 1994
5272100 Field effect transistor with T-shaped gate electrode and manufacturing method therefor Dec. 21, 1993
5210435 ITLDD transistor having a variable work function May. 11, 1993
5202277 Method of fabricating a semiconductor device Apr. 13, 1993
5175119 Method of producing insulated-gate field effect transistor Dec. 29, 1992
5147814 Method of manufacturing an LDDFET having an inverted-T shaped gate electrode Sep. 15, 1992
5134452 MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength Jul. 28, 1992
5127989 Method of forming a thin film pattern with a trapezoidal cross section Jul. 7, 1992
5115290 MOS type semiconductor device and method for manufacturing the same May. 19, 1992
5100820 MOSFET fabrication process with lightly-doped drain using local oxidation step to pattern gate electrode Mar. 31, 1992
5097300 Semiconductor device and manufacturing method thereof Mar. 17, 1992
5089863 Field effect transistor with T-shaped gate electrode Feb. 18, 1992
5077236 Method of making a pattern of tungsten interconnection Dec. 31, 1991
5061647 ITLDD transistor having variable work function and method for fabricating the same Oct. 29, 1991
4978626 LDD transistor process having doping sensitive endpoint etching Dec. 18, 1990
4558338 Insulated gate type field effect transistor having a silicon gate electrode Dec. 10, 1985

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