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Class Information
Number: 257/E21.205
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Characterized by sectional shape, e.g., t-shape, inverted t, spacer (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B20.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6534351 Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices Mar. 18, 2003
6534405 Method of forming a MOSFET device featuring a dual salicide process Mar. 18, 2003
6531380 Method of fabricating T-shaped recessed polysilicon gate transistors Mar. 11, 2003
6528363 Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch Mar. 4, 2003
6524901 Method for forming a notched damascene planar poly/metal gate Feb. 25, 2003
6524916 Controlled gate length and gate profile semiconductor device and manufacturing method therefor Feb. 25, 2003
6521517 Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layer Feb. 18, 2003
6515320 Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode Feb. 4, 2003
6515338 Semiconductor device and manufacturing method therefor Feb. 4, 2003
6509626 Conductive device components of different base widths formed from a common conductive layer Jan. 21, 2003
6509219 Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch Jan. 21, 2003
6509253 T-shaped gate electrode for reduced resistance Jan. 21, 2003
6507078 Fabrication of a wide metal silicide on a narrow polysilicon gate structure Jan. 14, 2003
6503844 Notched gate configuration for high performance integrated circuits Jan. 7, 2003
6501098 Semiconductor device Dec. 31, 2002
6500743 Method of copper-polysilicon T-gate formation Dec. 31, 2002
6498378 Methods of forming field effect transistors and integrated circuitry Dec. 24, 2002
6495890 Field-effect transistor with multidielectric constant gate insulation layer Dec. 17, 2002
6486030 Methods of forming field effect transistors and integrated circuitry including TiN gate element Nov. 26, 2002
6482688 Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate Nov. 19, 2002
6475841 Transistor with shaped gate electrode and method therefor Nov. 5, 2002
6472284 Method for fabricating a MOSFET having a thick and thin pad oxide at the gate sides Oct. 29, 2002
6461904 Structure and method for making a notched transistor with spacers Oct. 8, 2002
6455404 Semiconductor device and method for fabricating same Sep. 24, 2002
6440830 Method of copper-polysilicon gate formation Aug. 27, 2002
6436798 MOSFET device Aug. 20, 2002
6437411 Semiconductor device having chamfered silicide layer and method for manufacturing the same Aug. 20, 2002
6436746 Transistor having an improved gate structure and method of construction Aug. 20, 2002
6437377 Low dielectric constant sidewall spacer using notch gate process Aug. 20, 2002
6433371 Controlled gate length and gate profile semiconductor device Aug. 13, 2002
6429052 Method of making high performance transistor with a reduced width gate electrode and device comprising same Aug. 6, 2002
6423587 Method for fabricating a MOS transistor Jul. 23, 2002
6420234 Short channel length transistor and method of fabricating the same Jul. 16, 2002
6417084 T-gate formation using a modified conventional poly process Jul. 9, 2002
6406986 Fabrication of a wide metal silicide on a narrow polysilicon gate structure Jun. 18, 2002
6403456 T or T/Y gate formation using trim etch processing Jun. 11, 2002
6399469 Fabrication of a notched gate structure for a field effect transistor using a single patterning and etch process Jun. 4, 2002
6395606 MOSFET with metal in gate for reduced gate resistance May. 28, 2002
6387789 Method for fabricating semiconductor device May. 14, 2002
6387765 Method for forming an extended metal gate using a damascene process May. 14, 2002
6383872 Parallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structure May. 7, 2002
6383882 Method for fabricating MOS transistor using selective silicide process May. 7, 2002
6383876 MOS device having non-uniform dopant concentration and method for fabricating the same May. 7, 2002
6380008 Edge stress reduction by noncoincident layers Apr. 30, 2002
6373088 Edge stress reduction by noncoincident layers Apr. 16, 2002
6365497 Method for making an I - shaped access transistor having a silicide envelop Apr. 2, 2002
6362060 Method for forming semiconductor device having a gate in the trench Mar. 26, 2002
6358827 Method of forming a squared-off, vertically oriented polysilicon spacer gate Mar. 19, 2002
6359321 MIS transistor and method of fabricating the same Mar. 19, 2002
6355556 Method for fabricating transistor Mar. 12, 2002

1 2 3 4 5 6 7 8 9










 
 
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