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Class Information
Number: 257/E21.205
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Characterized by sectional shape, e.g., t-shape, inverted t, spacer (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B20.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6753225 Method of forming a gate structure Jun. 22, 2004
6746920 Fabrication method of flash memory device with L-shaped floating gate Jun. 8, 2004
6740943 MOSFET transistor with thick and thin pad oxide films May. 25, 2004
6740550 Methods of manufacturing semiconductor devices having chamfered silicide layers therein May. 25, 2004
6730552 MOSFET with decoupled halo before extension May. 4, 2004
6730976 Multilayer gate electrode structure with tilted on implantation May. 4, 2004
6723658 Gate structure and method Apr. 20, 2004
6716689 MOS transistor having a T-shaped gate electrode and method for fabricating the same Apr. 6, 2004
6710383 MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions Mar. 23, 2004
6703271 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer Mar. 9, 2004
6699755 Method for producing a gate Mar. 2, 2004
6693313 Field effect transistors, field effect transistor assemblies, and integrated circuitry Feb. 17, 2004
6674139 Inverse T-gate structure using damascene processing Jan. 6, 2004
6664592 Semiconductor device with groove type channel structure Dec. 16, 2003
6661066 Semiconductor device including inversely tapered gate electrode and manufacturing method thereof Dec. 9, 2003
6656824 Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch Dec. 2, 2003
6656808 Transistor having variable width gate electrode and method of manufacturing the same Dec. 2, 2003
6649460 Fabricating a substantially self-aligned MOSFET Nov. 18, 2003
6649462 Semiconductor device and method of manufacturing the same including T-shaped gate Nov. 18, 2003
6645821 Method of producing a thin film resistor in an integrated circuit Nov. 11, 2003
6645840 Multi-layered polysilicon process Nov. 11, 2003
6646326 Method and system for providing source/drain-gate spatial overlap engineering for low-power devices Nov. 11, 2003
6638801 Semiconductor device and its manufacturing method Oct. 28, 2003
6632717 Transistor of semiconductor device and method of manufacturing the same Oct. 14, 2003
6633070 Semiconductor device Oct. 14, 2003
6630712 Transistor with dynamic source/drain extensions Oct. 7, 2003
6627558 Apparatus and method for selectively restricting process fluid flow in semiconductor processing Sep. 30, 2003
6624057 Method for making an access transistor Sep. 23, 2003
6624483 Semiconductor device having an insulated gate and a fabrication process thereof Sep. 23, 2003
6624486 Method for low topography semiconductor device formation Sep. 23, 2003
6615391 Current controlled multi-state parallel test for semiconductor device Sep. 2, 2003
6607950 MIS transistors with a metal gate and high-k dielectric and method of forming Aug. 19, 2003
6596598 T-shaped gate device and method for making Jul. 22, 2003
6589831 Transistor structure using epitaxial layers and manufacturing method thereof Jul. 8, 2003
6586808 Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric Jul. 1, 2003
6580136 Method for delineation of eDRAM support device notched gate Jun. 17, 2003
6570200 Transistor structure using epitaxial layers and manufacturing method thereof May. 27, 2003
6566236 Gate structures with increased etch margin for self-aligned contact and the method of forming the same May. 20, 2003
6566215 Method of fabricating short channel MOS transistors with source/drain extensions May. 20, 2003
6566211 Surface modified interconnects May. 20, 2003
6562716 Method for fabricating semiconductor device May. 13, 2003
6562687 MIS transistor and method for making same on a semiconductor substrate May. 13, 2003
6559051 Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors May. 6, 2003
6555425 Method for manufacturing transistor Apr. 29, 2003
6551941 Method of forming a notched silicon-containing gate structure Apr. 22, 2003
6551883 MOS device with dual gate insulators and method of forming the same Apr. 22, 2003
6548862 Structure of semiconductor device and method for manufacturing the same Apr. 15, 2003
6545317 Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof Apr. 8, 2003
6544873 Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers Apr. 8, 2003
6541320 Method to controllably form notched polysilicon gate structures Apr. 1, 2003

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