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Class Information
Number: 257/E21.205
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Characterized by sectional shape, e.g., t-shape, inverted t, spacer (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B20.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same Sep. 8, 2009
7582518 High electron mobility transistor semiconductor device and fabrication method thereof Sep. 1, 2009
7575989 Method of manufacturing a transistor of a semiconductor device Aug. 18, 2009
7534677 Method of fabricating a dual gate oxide May. 19, 2009
7528445 Wing gate transistor for integrated circuits May. 5, 2009
7488658 Stressed semiconductor device structures having granular semiconductor material Feb. 10, 2009
7468305 Forming pocket and LDD regions using separate masks Dec. 23, 2008
7445975 Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure Nov. 4, 2008
7439166 Method for producing tiered gate structure devices Oct. 21, 2008
7432120 Method for realizing a hosting structure of nanometric elements Oct. 7, 2008
7432564 Pixel structure Oct. 7, 2008
7387955 Field effect transistor and method for manufacturing the same Jun. 17, 2008
7384852 Sub-lithographic gate length transistor using self-assembling polymers Jun. 10, 2008
7374989 Flash memory and methods of fabricating the same May. 20, 2008
7354821 Methods of fabricating trench capacitors with insulating layer collars in undercut regions Apr. 8, 2008
7341920 Method for forming a bipolar transistor device with self-aligned raised extrinsic base Mar. 11, 2008
7335542 Semiconductor device with mushroom electrode and manufacture method thereof Feb. 26, 2008
7326621 Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate Feb. 5, 2008
7282423 Method of forming fet with T-shaped gate Oct. 16, 2007
7223645 Semiconductor device with mushroom electrode and manufacture method thereof May. 29, 2007
7198996 Component built-in module and method for producing the same Apr. 3, 2007
7186607 Charge-trapping memory device and method for production Mar. 6, 2007
7176534 Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch Feb. 13, 2007
7129564 Structure and method of forming a notched gate field effect transistor Oct. 31, 2006
7101766 Methods of fabricating semiconductor device having T-shaped gate and L-shaped spacer Sep. 5, 2006
7087499 Integrated antifuse structure for FINFET and CMOS devices Aug. 8, 2006
7074684 Elevated source drain disposable spacer CMOS Jul. 11, 2006
7064400 Semiconductor device and process for producing the same Jun. 20, 2006
7064020 Method of manufacturing a semiconductor device having a gate electrode with a three layer structure Jun. 20, 2006
7045845 Self-aligned vertical gate semiconductor device May. 16, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7034354 Semiconductor structure with lining layer partially etched on sidewall of the gate Apr. 25, 2006
7026202 Inverse-T gate structure using damascene processing Apr. 11, 2006
7018914 Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same Mar. 28, 2006
7005710 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors Feb. 28, 2006
6995434 Semiconductor device and method of fabricating the same Feb. 7, 2006
6987038 Method for fabricating MOS field effect transistor Jan. 17, 2006
6979634 Manufacturing method for semiconductor device having a T-type gate electrode Dec. 27, 2005
6977415 Semiconductor device including a gate insulating film on a recess and source and drain extension regions Dec. 20, 2005
6974743 Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates Dec. 13, 2005
6955990 Methods for forming a gate in a semiconductor device Oct. 18, 2005
6953972 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer Oct. 11, 2005
6943400 Semiconductor device and its manufacturing method Sep. 13, 2005
6933620 Semiconductor component and method of manufacture Aug. 23, 2005
6930030 Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness Aug. 16, 2005
6927459 Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof Aug. 9, 2005
6927110 Method of manufacturing a semiconductor device Aug. 9, 2005
6924191 Method for fabricating a gate structure of a field effect transistor Aug. 2, 2005
6921940 MOS transistor and fabrication method thereof Jul. 26, 2005

1 2 3 4 5 6 7 8 9










 
 
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