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Class Information
Number: 257/E21.204
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Conductor layer next to insulator is non-mesi composite or compound, e.g., tin (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B6.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8592924 Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto Nov. 26, 2013
8450169 Replacement metal gate structures providing independent control on work function and gate leakage current May. 28, 2013
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8431472 Semiconductor device fabrication using gate substitution Apr. 30, 2013
8420519 Methods for fabricating integrated circuits with controlled P-channel threshold voltage Apr. 16, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8203189 Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto Jun. 19, 2012
8026539 Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same Sep. 27, 2011
7892961 Methods for forming MOS devices with metal-inserted polysilicon gate stack Feb. 22, 2011
7803682 Semiconductor memory device and method for manufacturing same Sep. 28, 2010
7781337 Forming method of silicide film Aug. 24, 2010
7776733 Method for depositing titanium nitride films for semiconductor manufacturing Aug. 17, 2010
7754559 Method for fabricating capacitor structures using the first contact metal Jul. 13, 2010
7700438 MOS device with nano-crystal gate structure Apr. 20, 2010
7648884 Semiconductor device with integrated resistive element and method of making Jan. 19, 2010
7632754 Method for forming metal line in a semiconductor device Dec. 15, 2009
7611943 Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation Nov. 3, 2009
7601623 Method of manufacturing a semiconductor device with a gate electrode having a laminate structure Oct. 13, 2009
7575973 Method of making three dimensional NAND memory Aug. 18, 2009
7429777 Semiconductor device with a gate electrode having a laminate structure Sep. 30, 2008
7300603 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers Nov. 27, 2007
7282403 Temperature stable metal nitride gate electrode Oct. 16, 2007
7256125 Method of manufacturing a semiconductor device Aug. 14, 2007
7208409 Integrated circuit metal silicide method Apr. 24, 2007
7186632 Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon Mar. 6, 2007
7179743 Titanium underlayer for lines in semiconductor devices Feb. 20, 2007
7115524 Methods of processing a semiconductor substrate Oct. 3, 2006
7071086 Method of forming a metal gate structure with tuning of work function by silicon incorporation Jul. 4, 2006
7067422 Method of forming a tantalum-containing gate electrode structure Jun. 27, 2006
7045406 Method of forming an electrode with adjusted work function May. 16, 2006
7041549 Method for manufacturing semiconductor device May. 9, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
7033888 Engineered metal gate electrode Apr. 25, 2006
7030430 Transition metal alloys for use as a gate electrode and devices incorporating these alloys Apr. 18, 2006
7019351 Transistor devices, and methods of forming transistor devices and circuit devices Mar. 28, 2006
6998302 Method of manufacturing mosfet having a fine gate width with improvement of short channel effect Feb. 14, 2006
6998686 Metal-gate electrode for CMOS transistor applications Feb. 14, 2006
6989316 Semiconductor device and method for manufacturing Jan. 24, 2006
6955973 Method for forming a semiconductor device Oct. 18, 2005
6943076 Semiconductor device and method of manufacturing the same Sep. 13, 2005
6943097 Atomic layer deposition of metallic contacts, gates and diffusion barriers Sep. 13, 2005
6936508 Metal gate MOS transistors and methods for making the same Aug. 30, 2005
6933243 High selectivity and residue free process for metal on thin dielectric gate etch application Aug. 23, 2005
6916695 Semiconductor device and method of manufacturing the same Jul. 12, 2005
6893924 Dual metal-alloy nitride gate electrodes May. 17, 2005
6884671 Method for fabricating a gate electrode Apr. 26, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6873020 High/low work function metal alloys for integrated circuit electrodes Mar. 29, 2005
6869868 Method of fabricating a MOSFET device with metal containing gate structures Mar. 22, 2005

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