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Class Information
Number: 257/E21.203
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Conductor layer next to insulator is metallic silicide (me si) (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B7.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8659066 Integrated circuit with a thin body field effect transistor and capacitor Feb. 25, 2014
8652898 Integrated circuit with a thin body field effect transistor and capacitor Feb. 18, 2014
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8304841 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof Nov. 6, 2012
8299542 MOSFET with multiple fully silicided gate and method for making the same Oct. 30, 2012
8084142 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects Dec. 27, 2011
7964907 Integrated circuit device gate structures Jun. 21, 2011
7892961 Methods for forming MOS devices with metal-inserted polysilicon gate stack Feb. 22, 2011
7858524 Method of manufacturing semiconductor device with silicide gate electrodes Dec. 28, 2010
7812415 Apparatus having gate structure and source/drain over semiconductor substrate Oct. 12, 2010
7754593 Semiconductor device and manufacturing method therefor Jul. 13, 2010
7700438 MOS device with nano-crystal gate structure Apr. 20, 2010
7611943 Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation Nov. 3, 2009
7436075 Ion beam irradiation apparatus and ion beam irradiation method Oct. 14, 2008
7429526 Method of forming silicide gate with interlayer Sep. 30, 2008
7399670 Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed Jul. 15, 2008
7358181 Method for structuring a semiconductor device Apr. 15, 2008
7341933 Method for manufacturing a silicided gate electrode using a buffer layer Mar. 11, 2008
7271455 Formation of fully silicided metal gate using dual self-aligned silicide process Sep. 18, 2007
7256123 Method of forming an interface for a semiconductor device Aug. 14, 2007
7256125 Method of manufacturing a semiconductor device Aug. 14, 2007
7235472 Method of making fully silicided gate electrode Jun. 26, 2007
7220662 Fully silicided field effect transistors May. 22, 2007
7208409 Integrated circuit metal silicide method Apr. 24, 2007
7183187 Integration scheme for using silicided dual work function metal gates Feb. 27, 2007
7075158 Semiconductor device and method of manufacturing the same Jul. 11, 2006
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7045456 MOS transistor gates with thin lower metal silicide and methods for making the same May. 16, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7019351 Transistor devices, and methods of forming transistor devices and circuit devices Mar. 28, 2006
7005716 Dual metal gate process: metals and their silicides Feb. 28, 2006
6991972 Gate material for semiconductor device fabrication Jan. 31, 2006
6992357 Semiconductor device and method of manufacturing the same Jan. 31, 2006
6982467 Semiconductor device and method of manufacturing the same Jan. 3, 2006
6967379 Semiconductor device including metal insulator semiconductor field effect transistor Nov. 22, 2005
6902994 Method for fabricating transistor having fully silicided gate Jun. 7, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6873030 Metal gate electrode using silicidation and method of formation thereof Mar. 29, 2005
6846734 Method and process to make multiple-threshold metal gates CMOS technology Jan. 25, 2005
6821887 Method of forming a metal silicide gate in a standard MOS process sequence Nov. 23, 2004
6794713 Semiconductor device and method of manufacturing the same including a dual layer raised source and drain Sep. 21, 2004
6784033 Method for the manufacture of an insulated gate field effect semiconductor device Aug. 31, 2004
6750519 Dual metal gate process: metals and their silicides Jun. 15, 2004
6723658 Gate structure and method Apr. 20, 2004
6713335 Method of self-aligning a damascene gate structure to isolation regions Mar. 30, 2004
6664154 Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes Dec. 16, 2003
6632731 Structure and method of making a sub-micron MOS transistor Oct. 14, 2003

1 2 3

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