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Class Information
Number: 257/E21.202
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Conductor layer next to the insulator is single metal, e.g., ta, w, mo, al (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B5.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8633494 Semiconductor device and method for manufacturing semiconductor device Jan. 21, 2014
8546212 Semiconductor device and fabricating method thereof Oct. 1, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8450772 Phase change RAM device and method for manufacturing the same May. 28, 2013
8431472 Semiconductor device fabrication using gate substitution Apr. 30, 2013
8399289 Programmable polyelectrolyte electrical switches Mar. 19, 2013
8399317 Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor Mar. 19, 2013
8394714 Anti-reflective coatings for micro-fluid applications Mar. 12, 2013
8383481 Semiconductor memory device and method of manufacturing the same Feb. 26, 2013
8377771 Recessed workfunction metal in CMOS transistor gates Feb. 19, 2013
8354313 Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures Jan. 15, 2013
8313991 Method for fabricating a high-K metal gate MOS Nov. 20, 2012
8241977 Short channel transistor with reduced length variation by using amorphous electrode material during implantation Aug. 14, 2012
8232604 Transistor with high-k dielectric sidewall spacer Jul. 31, 2012
8133768 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system Mar. 13, 2012
8026539 Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same Sep. 27, 2011
7919379 Dielectric spacer removal Apr. 5, 2011
7892961 Methods for forming MOS devices with metal-inserted polysilicon gate stack Feb. 22, 2011
7863124 Residue free patterned layer formation method applicable to CMOS structures Jan. 4, 2011
7803682 Semiconductor memory device and method for manufacturing same Sep. 28, 2010
7745278 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics Jun. 29, 2010
7601577 Work function control of metals Oct. 13, 2009
7534689 Stress enhanced MOS transistor and methods for its fabrication May. 19, 2009
7488629 Fabricating method of an active-matrix organic electroluminescent display panel Feb. 10, 2009
7452767 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics Nov. 18, 2008
7384800 Method of fabricating metal-insulator-metal (MIM) device with stable data retention Jun. 10, 2008
7381608 Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode Jun. 3, 2008
7374998 Selective incorporation of charge for transistor channels May. 20, 2008
7241677 Process for producing integrated circuits including reduction using gaseous organic compounds Jul. 10, 2007
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7071086 Method of forming a metal gate structure with tuning of work function by silicon incorporation Jul. 4, 2006
7064400 Semiconductor device and process for producing the same Jun. 20, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7033919 Fabrication of dual work-function metal gate structure for complementary field effect transistors Apr. 25, 2006
7019351 Transistor devices, and methods of forming transistor devices and circuit devices Mar. 28, 2006
7015152 Method of film deposition, and fabrication of structures Mar. 21, 2006
7005365 Structure and method to fabricate self-aligned transistors with dual work function metal gate electrodes Feb. 28, 2006
6991972 Gate material for semiconductor device fabrication Jan. 31, 2006
6974764 Method for making a semiconductor device having a metal gate electrode Dec. 13, 2005
6972433 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device Dec. 6, 2005
6960524 Method for production of a metallic or metal-containing layer Nov. 1, 2005
6936550 Semiconductor integrated circuit device and method for manufacturing the same Aug. 30, 2005
6927110 Method of manufacturing a semiconductor device Aug. 9, 2005
6921711 Method for forming metal replacement gate of high performance Jul. 26, 2005
6893910 One step deposition method for high-k dielectric and metal gate electrode May. 17, 2005
6890807 Method for making a semiconductor device having a metal gate electrode May. 10, 2005
6872627 Selective formation of metal gate for dual gate oxide application Mar. 29, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6861712 MOSFET threshold voltage tuning with metal gate stack control Mar. 1, 2005

1 2 3 4










 
 
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