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Class Information
Number: 257/E21.2
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (epo) > Conductor comprising at least another nonsilicon conductive layer (epo) > Conductor comprising metal or metallic silicide formed by deposition e.g., sputter deposition, i.e., without silicidation reaction (epo)
Description: This subclass is indented under subclass E21.198. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B2P4.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8664029 Process for fabricating a capacitance type tri-axial accelerometer Mar. 4, 2014
8664065 Method of forming an insulated gate field effect transistor device having a shield electrode structure Mar. 4, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8592305 Doping aluminum in tantalum silicide Nov. 26, 2013
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8492259 Method of forming metal gate structure Jul. 23, 2013
8389417 Semiconductor device and manufacturing method thereof Mar. 5, 2013
8362570 Method for making complementary P and N MOSFET transistors, electronic device including such transistors, and processor including at least one such device Jan. 29, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8304841 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof Nov. 6, 2012
8247257 Method and material for processing iron disilicide for photovoltaic application Aug. 21, 2012
8158473 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy Apr. 17, 2012
8058092 Method and material for processing iron disilicide for photovoltaic application Nov. 15, 2011
7858518 Method for forming a selective contact and local interconnect in situ Dec. 28, 2010
7737018 Process of forming an electronic device including forming a gate electrode layer and forming a patterned masking layer Jun. 15, 2010
7687389 Method for fabricating semiconductor device Mar. 30, 2010
7655557 CMOS silicide metal gate integration Feb. 2, 2010
7632744 Semiconductor integrated circuit device and process for manufacturing the same Dec. 15, 2009
7601635 Method of manufacturing a semiconductor device Oct. 13, 2009
7592256 Method of forming tungsten film Sep. 22, 2009
7585771 Method of manufacturing semiconductor device Sep. 8, 2009
7553729 Method of manufacturing non-volatile memory device Jun. 30, 2009
7553766 Method of fabricating semiconductor integrated circuit device Jun. 30, 2009
7525147 Memory structure Apr. 28, 2009
7432216 Semiconductor device and manufacturing method thereof Oct. 7, 2008
7425489 Self-aligned shallow trench isolation Sep. 16, 2008
7399670 Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed Jul. 15, 2008
7388228 Display device and method of manufacturing the same Jun. 17, 2008
7381657 Biased pulse DC reactive sputtering of oxide films Jun. 3, 2008
7326621 Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate Feb. 5, 2008
7271081 Metal/ZnOx/metal current limiter Sep. 18, 2007
7256125 Method of manufacturing a semiconductor device Aug. 14, 2007
7232751 Semiconductor device and manufacturing method therefor Jun. 19, 2007
7223660 Flash assisted annealing May. 29, 2007
7071049 Silicon rich barrier layers for integrated circuit devices Jul. 4, 2006
7067880 Transistor gate structure Jun. 27, 2006
7057243 Hybrid semiconductor device having an n+ (p) doped n-type gate and method of producing the same Jun. 6, 2006
7053459 Semiconductor integrated circuit device and process for producing the same May. 30, 2006
7049245 Two-step GC etch for GC profile and process window improvement May. 23, 2006
7049187 Manufacturing method of polymetal gate electrode May. 23, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7042055 Semiconductor device and manufacturing thereof May. 9, 2006
7034354 Semiconductor structure with lining layer partially etched on sidewall of the gate Apr. 25, 2006
7030014 Semiconductor constructions and electronic systems comprising metal silicide Apr. 18, 2006
7026202 Inverse-T gate structure using damascene processing Apr. 11, 2006
6992010 Gate structure and method of manufacture Jan. 31, 2006
6987069 Fabrication process of a semiconductor integrated circuit device Jan. 17, 2006
6984575 Fabrication process of a semiconductor integrated circuit device Jan. 10, 2006
6977228 Semiconductor device using damascene technique and manufacturing method therefor Dec. 20, 2005
6977221 Methods of forming an electrically conductive line Dec. 20, 2005

1 2 3 4 5 6 7 8 9 10 11

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