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Class Information
Number: 257/E21.2
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (epo) > Conductor comprising at least another nonsilicon conductive layer (epo) > Conductor comprising metal or metallic silicide formed by deposition e.g., sputter deposition, i.e., without silicidation reaction (epo)
Description: This subclass is indented under subclass E21.198. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B2P4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7601635 |
Method of manufacturing a semiconductor device |
Oct. 13, 2009 |
| 7592256 |
Method of forming tungsten film |
Sep. 22, 2009 |
| 7585771 |
Method of manufacturing semiconductor device |
Sep. 8, 2009 |
| 7553729 |
Method of manufacturing non-volatile memory device |
Jun. 30, 2009 |
| 7553766 |
Method of fabricating semiconductor integrated circuit device |
Jun. 30, 2009 |
| 7525147 |
Memory structure |
Apr. 28, 2009 |
| 7432216 |
Semiconductor device and manufacturing method thereof |
Oct. 7, 2008 |
| 7425489 |
Self-aligned shallow trench isolation |
Sep. 16, 2008 |
| 7399670 |
Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed |
Jul. 15, 2008 |
| 7388228 |
Display device and method of manufacturing the same |
Jun. 17, 2008 |
| 7381657 |
Biased pulse DC reactive sputtering of oxide films |
Jun. 3, 2008 |
| 7326621 |
Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate |
Feb. 5, 2008 |
| 7271081 |
Metal/ZnOx/metal current limiter |
Sep. 18, 2007 |
| 7256125 |
Method of manufacturing a semiconductor device |
Aug. 14, 2007 |
| 7232751 |
Semiconductor device and manufacturing method therefor |
Jun. 19, 2007 |
| 7223660 |
Flash assisted annealing |
May. 29, 2007 |
| 7071049 |
Silicon rich barrier layers for integrated circuit devices |
Jul. 4, 2006 |
| 7067880 |
Transistor gate structure |
Jun. 27, 2006 |
| 7057243 |
Hybrid semiconductor device having an n+ (p) doped n-type gate and method of producing the same |
Jun. 6, 2006 |
| 7053459 |
Semiconductor integrated circuit device and process for producing the same |
May. 30, 2006 |
| 7049245 |
Two-step GC etch for GC profile and process window improvement |
May. 23, 2006 |
| 7049187 |
Manufacturing method of polymetal gate electrode |
May. 23, 2006 |
| 7041585 |
Process for producing an integrated electronic component |
May. 9, 2006 |
| 7042055 |
Semiconductor device and manufacturing thereof |
May. 9, 2006 |
| 7034354 |
Semiconductor structure with lining layer partially etched on sidewall of the gate |
Apr. 25, 2006 |
| 7030014 |
Semiconductor constructions and electronic systems comprising metal silicide |
Apr. 18, 2006 |
| 7026202 |
Inverse-T gate structure using damascene processing |
Apr. 11, 2006 |
| 6992010 |
Gate structure and method of manufacture |
Jan. 31, 2006 |
| 6987069 |
Fabrication process of a semiconductor integrated circuit device |
Jan. 17, 2006 |
| 6984575 |
Fabrication process of a semiconductor integrated circuit device |
Jan. 10, 2006 |
| 6977221 |
Methods of forming an electrically conductive line |
Dec. 20, 2005 |
| 6977228 |
Semiconductor device using damascene technique and manufacturing method therefor |
Dec. 20, 2005 |
| 6962853 |
Semiconductor device and method for fabricating the same |
Nov. 8, 2005 |
| 6960515 |
Method of forming a metal gate |
Nov. 1, 2005 |
| 6949455 |
Method for forming a semiconductor device structure a semiconductor layer |
Sep. 27, 2005 |
| 6943107 |
Methods of forming a refractory metal silicide |
Sep. 13, 2005 |
| 6939787 |
Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film |
Sep. 6, 2005 |
| 6933580 |
Semiconductor structure with substantially etched oxynitride defects protruding therefrom |
Aug. 23, 2005 |
| 6930363 |
Barrier in gate stack for improved gate dielectric integrity |
Aug. 16, 2005 |
| 6919269 |
Production method for a semiconductor component |
Jul. 19, 2005 |
| 6911381 |
Boron incorporated diffusion barrier material |
Jun. 28, 2005 |
| 6908806 |
Gate metal recess for oxidation protection and parasitic capacitance reduction |
Jun. 21, 2005 |
| 6909145 |
Metal spacer gate for CMOS FET |
Jun. 21, 2005 |
| 6908803 |
Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures |
Jun. 21, 2005 |
| 6905927 |
Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide |
Jun. 14, 2005 |
| 6903425 |
Silicon rich barrier layers for integrated circuit devices |
Jun. 7, 2005 |
| 6897534 |
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same |
May. 24, 2005 |
| 6893980 |
Semiconductor device and manufacturing method therefor |
May. 17, 2005 |
| 6890843 |
Methods of forming semiconductor structures |
May. 10, 2005 |
| 6887763 |
Method for using thin spacers and oxidation in gate oxides |
May. 3, 2005 |
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