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Class Information
Number: 257/E21.199
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (epo) > Conductor comprising at least another nonsilicon conductive layer (epo) > Conductor comprising silicide layer formed by silicidation reaction of silicon with metal layer (epo)
Description: This subclass is indented under subclass E21.198. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B2P3.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7399669 |
Semiconductor devices and methods for fabricating the same including forming an amorphous region in an interface between a device isolation layer and a source/drain diffusion layer |
Jul. 15, 2008 |
| 7396716 |
Method to obtain fully silicided poly gate |
Jul. 8, 2008 |
| 7361597 |
Semiconductor device and method of fabricating the same |
Apr. 22, 2008 |
| 7354854 |
Nickel silicide method and structure |
Apr. 8, 2008 |
| 7351659 |
Methods of forming a transistor with an integrated metal silicide gate electrode |
Apr. 1, 2008 |
| 7329599 |
Method for fabricating a semiconductor device |
Feb. 12, 2008 |
| 7326644 |
Semiconductor device and method of fabricating the same |
Feb. 5, 2008 |
| 7314830 |
Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt |
Jan. 1, 2008 |
| 7306998 |
Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect |
Dec. 11, 2007 |
| 7256123 |
Method of forming an interface for a semiconductor device |
Aug. 14, 2007 |
| 7253472 |
Method of fabricating semiconductor device employing selectivity poly deposition |
Aug. 7, 2007 |
| 7244996 |
Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
Jul. 17, 2007 |
| 7238612 |
Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same |
Jul. 3, 2007 |
| 7232756 |
Nickel salicide process with reduced dopant deactivation |
Jun. 19, 2007 |
| 7226827 |
Method for fabricating semiconductor devices having silicided electrodes |
Jun. 5, 2007 |
| 7214577 |
Method of fabricating semiconductor integrated circuit device |
May. 8, 2007 |
| 7208414 |
Method for enhanced uni-directional diffusion of metal and subsequent silicide formation |
Apr. 24, 2007 |
| 7208398 |
Metal-halogen physical vapor deposition for semiconductor device defect reduction |
Apr. 24, 2007 |
| 7179714 |
Method of fabricating MOS transistor having fully silicided gate |
Feb. 20, 2007 |
| 7172967 |
Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same |
Feb. 6, 2007 |
| 7105429 |
Method of inhibiting metal silicide encroachment in a transistor |
Sep. 12, 2006 |
| 7060578 |
Semiconductor device and method of fabricating the same |
Jun. 13, 2006 |
| 7041548 |
Methods of forming a gate stack that is void of silicon clusters within a metallic silicide film thereof |
May. 9, 2006 |
| 7041583 |
Method of removing features using an improved removal process in the fabrication of a semiconductor device |
May. 9, 2006 |
| 7034354 |
Semiconductor structure with lining layer partially etched on sidewall of the gate |
Apr. 25, 2006 |
| 7030014 |
Semiconductor constructions and electronic systems comprising metal silicide |
Apr. 18, 2006 |
| 7012024 |
Methods of forming a transistor with an integrated metal silicide gate electrode |
Mar. 14, 2006 |
| 6998341 |
Process for forming a diffusion barrier material nitride film |
Feb. 14, 2006 |
| 6995434 |
Semiconductor device and method of fabricating the same |
Feb. 7, 2006 |
| 6992388 |
Formation of micro rough polysurface for low sheet resistant salicided sub-quarter micron polylines |
Jan. 31, 2006 |
| 6943110 |
Wafer processing apparatus and methods for depositing cobalt silicide |
Sep. 13, 2005 |
| 6936528 |
Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film |
Aug. 30, 2005 |
| 6927111 |
Method for fabricating semiconductor device |
Aug. 9, 2005 |
| 6927459 |
Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof |
Aug. 9, 2005 |
| 6902993 |
Gate electrode for MOS transistors |
Jun. 7, 2005 |
| 6887774 |
Conductor layer nitridation |
May. 3, 2005 |
| 6878627 |
Semiconductor device with cobalt silicide contacts and method of making the same |
Apr. 12, 2005 |
| 6873022 |
Semiconductor device and method for manufacturing the same |
Mar. 29, 2005 |
| 6838363 |
Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material |
Jan. 4, 2005 |
| 6835612 |
Method for fabricating a MOSFET having a very small channel length |
Dec. 28, 2004 |
| 6835610 |
Method of manufacturing semiconductor device having gate electrode with expanded upper portion |
Dec. 28, 2004 |
| 6831008 |
Nickel silicide--silicon nitride adhesion through surface passivation |
Dec. 14, 2004 |
| 6828206 |
Semiconductor device and method for fabricating the same |
Dec. 7, 2004 |
| 6815275 |
Methods for fabricating metal silicide structures using an etch stopping capping layer |
Nov. 9, 2004 |
| 6812121 |
Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate |
Nov. 2, 2004 |
| 6812530 |
Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures |
Nov. 2, 2004 |
| 6806178 |
Semiconductor device and method for fabricating the same |
Oct. 19, 2004 |
| 6798026 |
Conductor layer nitridation |
Sep. 28, 2004 |
| 6798028 |
Field effect transistor with reduced gate delay and method of fabricating the same |
Sep. 28, 2004 |
| 6797618 |
Method for forming silicide film of a semiconductor device |
Sep. 28, 2004 |
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