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Class Information
Number: 257/E21.199
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (epo) > Conductor comprising at least another nonsilicon conductive layer (epo) > Conductor comprising silicide layer formed by silicidation reaction of silicon with metal layer (epo)
Description: This subclass is indented under subclass E21.198. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B2P3.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8592277 Method of forming low resistance gate for power MOSFET applications Nov. 26, 2013
8497205 Semiconductor device manufacturing method, wiring and semiconductor device Jul. 30, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013
8440564 Schemes for forming barrier layers for copper in interconnect structures May. 14, 2013
8435889 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts May. 7, 2013
8368219 Buried silicide local interconnect with sidewall spacers and method for making the same Feb. 5, 2013
8350344 Semiconductor device and method of fabricating the same Jan. 8, 2013
8343867 Method for main spacer trim-back Jan. 1, 2013
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8304841 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof Nov. 6, 2012
8304319 Method for making a disilicide Nov. 6, 2012
8283248 Methods of manufacturing semiconductor devices Oct. 9, 2012
8247257 Method and material for processing iron disilicide for photovoltaic application Aug. 21, 2012
8232201 Schemes for forming barrier layers for copper in interconnect structures Jul. 31, 2012
8187970 Process for forming cobalt and cobalt silicide materials in tungsten contact applications May. 29, 2012
8178438 Manufacturing method of semiconductor device and electronic device May. 15, 2012
8178433 Methods for the formation of fully silicided metal gates May. 15, 2012
8158513 Integrated circuit system employing backside energy source for electrical contact formation Apr. 17, 2012
8158519 Method of manufacturing non-volatile memory cell using self-aligned metal silicide Apr. 17, 2012
8158473 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy Apr. 17, 2012
8058092 Method and material for processing iron disilicide for photovoltaic application Nov. 15, 2011
8053292 Semiconductor device and method of manufacturing semiconductor device Nov. 8, 2011
8039388 Main spacer trim-back method for replacement gate process Oct. 18, 2011
8034715 Method of fabricating semiconductor integrated circuit device Oct. 11, 2011
8030777 Protection of Cu damascene interconnects by formation of a self-aligned buffer layer Oct. 4, 2011
7994039 Method of fabricating semiconductor device Aug. 9, 2011
7977194 Method for fabricating semiconductor device with fully silicided gate electrode Jul. 12, 2011
7977236 Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circui Jul. 12, 2011
7964496 Schemes for forming barrier layers for copper in interconnect structures Jun. 21, 2011
7960237 Structure and method for mosfet with reduced extension resistance Jun. 14, 2011
7960283 Method for reducing silicide defects in integrated circuits Jun. 14, 2011
7960280 Process method to fully salicide (FUSI) both N-poly and P-poly on a CMOS flow Jun. 14, 2011
7955978 Enhanced method of forming nickel silicides Jun. 7, 2011
7939893 Semiconductor device and its manufacturing method May. 10, 2011
7892971 Sub-second annealing processes for semiconductor devices Feb. 22, 2011
7879723 Semiconductor device manufacturing method, wiring and semiconductor device Feb. 1, 2011
7863186 Fully and uniformly silicided gate structure and method for forming same Jan. 4, 2011
7859059 Semiconductor device and method for manufacturing same Dec. 28, 2010
7858517 Method of manufacturing semiconductor device, and semiconductor device Dec. 28, 2010
7851352 Manufacturing method of semiconductor device and electronic device Dec. 14, 2010
7786004 Method of treating an exposed conductive film prior to forming a silicide Aug. 31, 2010
7781296 Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor Aug. 24, 2010
7759205 Methods for fabricating semiconductor devices minimizing under-oxide regrowth Jul. 20, 2010
7754554 Methods for fabricating low contact resistance CMOS circuits Jul. 13, 2010
7745320 Method for reducing silicide defects in integrated circuits Jun. 29, 2010
7709372 Semiconductor device and method for manufacturing the same May. 4, 2010
7704858 Methods of forming nickel silicide layers with low carbon content Apr. 27, 2010
7700451 Method of manufacturing a transistor Apr. 20, 2010
7666762 Method for fabricating semiconductor device Feb. 23, 2010

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