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Class Information
Number: 257/E21.196
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by conductor (epo) > Final conductor next to insulator having lateral composition or doping variation, or being formed laterally by more than one deposition step (epo)
Description: This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B8.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8330184 Bidirectional voltage-regulator diode Dec. 11, 2012
8268672 Method of assembly and assembly thus made Sep. 18, 2012
8241985 Semiconductor device having gate electrode with lower impurity concentration at edge portions than above channel and method of manufacturing the same Aug. 14, 2012
8133814 Etch methods for semiconductor device fabrication Mar. 13, 2012
8124515 Gate etch optimization through silicon dopant profile change Feb. 28, 2012
7989900 Semiconductor structure including gate electrode having laterally variable work function Aug. 2, 2011
7858479 Method and apparatus of fabricating semiconductor device Dec. 28, 2010
7838371 Method of manufacturing a FET gate Nov. 23, 2010
7790556 Integration of high k gate dielectric Sep. 7, 2010
7781288 Semiconductor structure including gate electrode having laterally variable work function Aug. 24, 2010
7667253 Non-volatile memory device with conductive sidewall spacer and method for fabricating the same Feb. 23, 2010
7217624 Non-volatile memory device with conductive sidewall spacer and method for fabricating the same May. 15, 2007
7008831 Semiconductor device and manufacturing method thereof Mar. 7, 2006
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6878582 Low-GIDL MOSFET structure and method for fabrication Apr. 12, 2005
6876045 Semiconductor device and process for manufacturing the same Apr. 5, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6841826 Low-GIDL MOSFET structure and method for fabrication Jan. 11, 2005
6791106 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6762468 Semiconductor device and method of manufacturing the same Jul. 13, 2004
6747328 Scaled MOSFET device and its fabricating method Jun. 8, 2004
6744101 Non-uniform gate/dielectric field effect transistor Jun. 1, 2004
6734510 Technique to mitigate short channel effects with vertical gate transistor with different gate materials May. 11, 2004
6696725 Dual-gate MOSFET with channel potential engineering Feb. 24, 2004
6686295 Anisotropic etch method Feb. 3, 2004
6680224 Methods of forming and operating field effect transistors having gate and sub-gate electrodes Jan. 20, 2004
6639288 Semiconductor device with a particular conductor arrangement Oct. 28, 2003
6613654 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Sep. 2, 2003
6614082 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Sep. 2, 2003
6603180 Semiconductor device having large-area silicide layer and process of fabrication thereof Aug. 5, 2003
6586808 Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric Jul. 1, 2003
6563151 Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same May. 13, 2003
6562685 Method of fabricating field effect transistor May. 13, 2003
6528404 Semiconductor device and fabrication method thereof Mar. 4, 2003
6528399 MOSFET transistor with short channel effect compensated by the gate material Mar. 4, 2003
6468843 MIS semiconductor device having an LDD structure and a manufacturing method therefor Oct. 22, 2002
6461976 Anisotropic etch method Oct. 8, 2002
6448613 Fabrication of a field effect transistor with minimized parasitic Miller capacitance Sep. 10, 2002
6407436 Semiconductor device with abrupt source/drain extensions with controllable gate electrode overlap Jun. 18, 2002
6312995 MOS transistor with assisted-gates and ultra-shallow "Psuedo" source and drain extensions for ultra-large-scale integration Nov. 6, 2001
6306738 Modulation of gate polysilicon doping profile by sidewall implantation Oct. 23, 2001
6303995 Sidewall structure for metal interconnect and method of making same Oct. 16, 2001
6300177 Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials Oct. 9, 2001
6300207 Depleted sidewall-poly LDD transistor Oct. 9, 2001
6284577 MIS semiconductor device having an LDD structure and a manufacturing method therefor Sep. 4, 2001
6281062 MOS semiconductor device with self-aligned punchthrough stops and method of fabrication Aug. 28, 2001
6281086 Semiconductor device having a low resistance gate conductor and method of fabrication the same Aug. 28, 2001
6274446 Method for fabricating abrupt source/drain extensions with controllable gate electrode overlap Aug. 14, 2001
6255175 Fabrication of a field effect transistor with minimized parasitic Miller capacitance Jul. 3, 2001
6251760 Semiconductor device and its wiring and a fabrication method thereof Jun. 26, 2001

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