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Class Information
Number: 257/E21.194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by insulator (epo) > On single crystalline silicon (epo) > Characterized by treatment after formation of definitive gate conductor (epo)
Description: This subclass is indented under subclass E21.193. This subclass is substantially the same in scope as ECLA classification H01L21/28E2C2B.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8546920 Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) Oct. 1, 2013
8513085 Structure and method to improve threshold voltage of MOSFETs including a high k dielectric Aug. 20, 2013
8431472 Semiconductor device fabrication using gate substitution Apr. 30, 2013
8288826 Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) Oct. 16, 2012
8173531 Structure and method to improve threshold voltage of MOSFETS including a high K dielectric May. 8, 2012
8124515 Gate etch optimization through silicon dopant profile change Feb. 28, 2012
8076193 CMOS device fabrication method with PMOS interface insulating film formed concurrently with sidewall insulating film Dec. 13, 2011
8053373 Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX) Nov. 8, 2011
7910424 Semiconductor memory and fabrication method for the same Mar. 22, 2011
7754569 Anti-halo compensation Jul. 13, 2010
7709909 Method for making a semiconductor device having a high-k gate dielectric May. 4, 2010
7632744 Semiconductor integrated circuit device and process for manufacturing the same Dec. 15, 2009
7579660 Semiconductor device and manufacturing method thereof Aug. 25, 2009
7541246 Method of manufacturing semiconductor device Jun. 2, 2009
7498228 Method for fabricating SONOS a memory Mar. 3, 2009
7459758 Transistor structure and method for making same Dec. 2, 2008
7442983 Method for making a semiconductor device having a high-k gate dielectric Oct. 28, 2008
7300833 Process for producing semiconductor integrated circuit device Nov. 27, 2007
7268047 Semiconductor device and method for manufacturing the same Sep. 11, 2007
7189623 Semiconductor processing method and field effect transistor Mar. 13, 2007
7105411 Methods of forming a transistor gate Sep. 12, 2006
7071067 Fabrication of integrated devices using nitrogen implantation Jul. 4, 2006
7053459 Semiconductor integrated circuit device and process for producing the same May. 30, 2006
7049187 Manufacturing method of polymetal gate electrode May. 23, 2006
7005393 Method of fabricating a semiconductor device containing nitrogen in an oxide film Feb. 28, 2006
7002224 Transistor with doped gate dielectric Feb. 21, 2006
7001817 Method for fabricating a semiconductor device Feb. 21, 2006
6979580 Process for controlling performance characteristics of a negative differential resistance (NDR) device Dec. 27, 2005
6979658 Method of fabricating a semiconductor device containing nitrogen in a gate oxide film Dec. 27, 2005
6955973 Method for forming a semiconductor device Oct. 18, 2005
6953747 Method for forming gate oxide in semiconductor device Oct. 11, 2005
H2128 Radiation hardened microcircuits Oct. 4, 2005
6936550 Semiconductor integrated circuit device and method for manufacturing the same Aug. 30, 2005
6924536 Semiconductor device and its manufacturing method Aug. 2, 2005
6913961 Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere Jul. 5, 2005
6908868 Gas passivation on nitride encapsulated devices Jun. 21, 2005
6905927 Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide Jun. 14, 2005
6891238 Semiconductor device and method of manufacturing the same May. 10, 2005
6888204 Semiconductor devices, and methods for same May. 3, 2005
6888183 Manufacture method for semiconductor device with small variation in MOS threshold voltage May. 3, 2005
6881636 Methods of forming deuterated silicon nitride-containing materials Apr. 19, 2005
6882031 Ammonia gas passivation on nitride encapsulated devices Apr. 19, 2005
6878583 Integration method to enhance p+ gate activation Apr. 12, 2005
6869862 Method for improving a physical property defect value of a gate dielectric Mar. 22, 2005
6864132 Methods of fabricating integrated circuit gates by pretreating prior to oxidizing Mar. 8, 2005
6838327 Method for manufacturing semiconductor device having insulating film with N--H bond Jan. 4, 2005
6833306 Deuterium treatment of semiconductor device Dec. 21, 2004
6821838 Method of forming an ultra thin dielectric film and a semiconductor device incorporating the same Nov. 23, 2004
6803319 Process for optically erasing charge buildup during fabrication of an integrated circuit Oct. 12, 2004
6800519 Semiconductor device and method of manufacturing the same Oct. 5, 2004

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