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Class Information
Number: 257/E21.194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by insulator (epo) > On single crystalline silicon (epo) > Characterized by treatment after formation of definitive gate conductor (epo)
Description: This subclass is indented under subclass E21.193. This subclass is substantially the same in scope as ECLA classification H01L21/28E2C2B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7300833 |
Process for producing semiconductor integrated circuit device |
Nov. 27, 2007 |
| 7268047 |
Semiconductor device and method for manufacturing the same |
Sep. 11, 2007 |
| 7189623 |
Semiconductor processing method and field effect transistor |
Mar. 13, 2007 |
| 7105411 |
Methods of forming a transistor gate |
Sep. 12, 2006 |
| 7071067 |
Fabrication of integrated devices using nitrogen implantation |
Jul. 4, 2006 |
| 7053459 |
Semiconductor integrated circuit device and process for producing the same |
May. 30, 2006 |
| 7049187 |
Manufacturing method of polymetal gate electrode |
May. 23, 2006 |
| 7005393 |
Method of fabricating a semiconductor device containing nitrogen in an oxide film |
Feb. 28, 2006 |
| 7001817 |
Method for fabricating a semiconductor device |
Feb. 21, 2006 |
| 7002224 |
Transistor with doped gate dielectric |
Feb. 21, 2006 |
| 6979580 |
Process for controlling performance characteristics of a negative differential resistance (NDR) device |
Dec. 27, 2005 |
| 6979658 |
Method of fabricating a semiconductor device containing nitrogen in a gate oxide film |
Dec. 27, 2005 |
| 6955973 |
Method for forming a semiconductor device |
Oct. 18, 2005 |
| 6953747 |
Method for forming gate oxide in semiconductor device |
Oct. 11, 2005 |
| H2128 |
Radiation hardened microcircuits |
Oct. 4, 2005 |
| 6936550 |
Semiconductor integrated circuit device and method for manufacturing the same |
Aug. 30, 2005 |
| 6924536 |
Semiconductor device and its manufacturing method |
Aug. 2, 2005 |
| 6913961 |
Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere |
Jul. 5, 2005 |
| 6908868 |
Gas passivation on nitride encapsulated devices |
Jun. 21, 2005 |
| 6905927 |
Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide |
Jun. 14, 2005 |
| 6891238 |
Semiconductor device and method of manufacturing the same |
May. 10, 2005 |
| 6888204 |
Semiconductor devices, and methods for same |
May. 3, 2005 |
| 6888183 |
Manufacture method for semiconductor device with small variation in MOS threshold voltage |
May. 3, 2005 |
| 6881636 |
Methods of forming deuterated silicon nitride-containing materials |
Apr. 19, 2005 |
| 6882031 |
Ammonia gas passivation on nitride encapsulated devices |
Apr. 19, 2005 |
| 6878583 |
Integration method to enhance p+ gate activation |
Apr. 12, 2005 |
| 6869862 |
Method for improving a physical property defect value of a gate dielectric |
Mar. 22, 2005 |
| 6864132 |
Methods of fabricating integrated circuit gates by pretreating prior to oxidizing |
Mar. 8, 2005 |
| 6838327 |
Method for manufacturing semiconductor device having insulating film with N--H bond |
Jan. 4, 2005 |
| 6833306 |
Deuterium treatment of semiconductor device |
Dec. 21, 2004 |
| 6821838 |
Method of forming an ultra thin dielectric film and a semiconductor device incorporating the same |
Nov. 23, 2004 |
| 6803319 |
Process for optically erasing charge buildup during fabrication of an integrated circuit |
Oct. 12, 2004 |
| 6800519 |
Semiconductor device and method of manufacturing the same |
Oct. 5, 2004 |
| 6780718 |
Transistor structure and method for making same |
Aug. 24, 2004 |
| 6756291 |
Method for hardening gate oxides using gate etch process |
Jun. 29, 2004 |
| 6740603 |
Control of Vmin transient voltage drift by maintaining a temperature less than or equal to 350.degree. C. after the protective overcoat level |
May. 25, 2004 |
| 6737341 |
Semiconductor integrated circuit device and method for manufacturing the same |
May. 18, 2004 |
| 6737730 |
High-pressure anneal process for integrated circuits |
May. 18, 2004 |
| 6717199 |
Tailored insulator properties for devices |
Apr. 6, 2004 |
| 6703326 |
High-pressure anneal process for integrated circuits |
Mar. 9, 2004 |
| 6703327 |
High-pressure anneal process for integrated circuits |
Mar. 9, 2004 |
| 6703325 |
High pressure anneal process for integrated circuits |
Mar. 9, 2004 |
| 6700170 |
Insulated gate transistor having a gate insulator containing nitrogen atoms and fluorine atoms |
Mar. 2, 2004 |
| 6693313 |
Field effect transistors, field effect transistor assemblies, and integrated circuitry |
Feb. 17, 2004 |
| 6693048 |
High-pressure anneal process for integrated circuits |
Feb. 17, 2004 |
| 6673726 |
High-pressure anneal process for integrated circuits |
Jan. 6, 2004 |
| 6674151 |
Deuterium passivated semiconductor device having enhanced immunity to hot carrier effects |
Jan. 6, 2004 |
| 6670289 |
High-pressure anneal process for integrated circuits |
Dec. 30, 2003 |
| 6660587 |
Method for forming a gate electrode in a semiconductor device |
Dec. 9, 2003 |
| 6632729 |
Laser thermal annealing of high-k gate oxide layers |
Oct. 14, 2003 |
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