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Class Information
Number: 257/E21.193
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo) > Characterized by insulator (epo) > On single crystalline silicon (epo)
Description: This subclass is indented under subclass E21.192. This subclass is substantially the same in scope as ECLA classification H01L21/28E2C2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7557048 |
Methods of forming semiconductor constructions |
Jul. 7, 2009 |
| 7514758 |
Dual-oxide transistors for the improvement of reliability and off-state leakage |
Apr. 7, 2009 |
| 7459720 |
Single crystal wafer and solar battery cell |
Dec. 2, 2008 |
| 7429539 |
Nitriding method of gate oxide film |
Sep. 30, 2008 |
| 7405131 |
Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor |
Jul. 29, 2008 |
| 7365027 |
ALD of amorphous lanthanide doped TiO.sub.x films |
Apr. 29, 2008 |
| 7361613 |
Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method |
Apr. 22, 2008 |
| 7348222 |
Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
Mar. 25, 2008 |
| 7320943 |
Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same |
Jan. 22, 2008 |
| 7282415 |
Method for making a semiconductor device with strain enhancement |
Oct. 16, 2007 |
| 7282403 |
Temperature stable metal nitride gate electrode |
Oct. 16, 2007 |
| 7268047 |
Semiconductor device and method for manufacturing the same |
Sep. 11, 2007 |
| 7250375 |
Substrate processing method and material for electronic device |
Jul. 31, 2007 |
| 7238625 |
Method for processing a semiconductor device comprising a silicon-oxy-nitride dielectric layer |
Jul. 3, 2007 |
| 7235448 |
Dielectric layer forming method and devices formed therewith |
Jun. 26, 2007 |
| 7232772 |
Substrate processing method |
Jun. 19, 2007 |
| 7232731 |
Method for fabricating transistor of semiconductor device |
Jun. 19, 2007 |
| 7205217 |
Method for forming trench gate dielectric layer |
Apr. 17, 2007 |
| 7195961 |
SOI structure comprising substrate contacts on both sides of the box, and method for the production of such a structure |
Mar. 27, 2007 |
| 7192887 |
Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same |
Mar. 20, 2007 |
| 7189662 |
Methods of forming semiconductor constructions |
Mar. 13, 2007 |
| 7189623 |
Semiconductor processing method and field effect transistor |
Mar. 13, 2007 |
| 7176094 |
Ultra-thin gate oxide through post decoupled plasma nitridation anneal |
Feb. 13, 2007 |
| 7169716 |
Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask |
Jan. 30, 2007 |
| 7163901 |
Methods for forming thin film layers by simultaneous doping and sintering |
Jan. 16, 2007 |
| 7160818 |
Semiconductor device and method for fabricating same |
Jan. 9, 2007 |
| 7151299 |
Semiconductor device and its manufacturing method |
Dec. 19, 2006 |
| 7135421 |
Atomic layer-deposited hafnium aluminum oxide |
Nov. 14, 2006 |
| 7115456 |
Sequential lateral solidification device and method of crystallizing silicon using the same |
Oct. 3, 2006 |
| 7109131 |
System and method for hydrogen-rich selective oxidation |
Sep. 19, 2006 |
| 7105411 |
Methods of forming a transistor gate |
Sep. 12, 2006 |
| 7067434 |
Hydrogen free integration of high-k gate dielectrics |
Jun. 27, 2006 |
| 7064052 |
Method of processing a transistor gate dielectric film with stem |
Jun. 20, 2006 |
| 7064058 |
Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics |
Jun. 20, 2006 |
| 7060524 |
Methods of testing/stressing a charge trapping device |
Jun. 13, 2006 |
| 7060600 |
Semiconductor capacitor and MOSFET fitted therewith |
Jun. 13, 2006 |
| 7061128 |
Semiconductor device and manufacturing method of the same |
Jun. 13, 2006 |
| 7056835 |
Surface preparation prior to deposition |
Jun. 6, 2006 |
| 7056836 |
Manufacturing method for a semiconductor device |
Jun. 6, 2006 |
| 7057244 |
Dielectric materials |
Jun. 6, 2006 |
| 7052953 |
Dielectric material forming methods and enhanced dielectric materials |
May. 30, 2006 |
| 7053006 |
Methods of fabricating oxide layers by plasma nitridation and oxidation |
May. 30, 2006 |
| 7053009 |
Nanolaminate film atomic layer deposition method |
May. 30, 2006 |
| 7053455 |
Semiconductor device and method of manufacturing semiconductor device |
May. 30, 2006 |
| 7049242 |
Post high voltage gate dielectric pattern plasma surface treatment |
May. 23, 2006 |
| 7045406 |
Method of forming an electrode with adjusted work function |
May. 16, 2006 |
| 7045430 |
Atomic layer-deposited LaAlO3 films for gate dielectrics |
May. 16, 2006 |
| 7045855 |
Semiconductor device and corresponding fabrication method |
May. 16, 2006 |
| 7041556 |
Vertical transistor and method of making |
May. 9, 2006 |
| 7041563 |
Semiconductor device having a shallow trench isolation and method of fabricating the same |
May. 9, 2006 |
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