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Class Information
Number: 257/E21.191
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Making electrode structure comprising conductor-insulator-semiconductor, e.g., mis gate (epo) > Insulator formed on silicon semiconductor body (epo)
Description: This subclass is indented under subclass E21.19. This subclass is substantially the same in scope as ECLA classification H01L21/28E2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.195 Characterized by conductor (epo) 22
257/E21.192 Characterized by insulator (epo) 91


Patents under this class:

Patent Number Title Of Patent Date Issued
8450218 Methods of forming silicon oxides and methods of forming interlevel dielectrics May. 28, 2013
8367559 Method of manufacturing a semiconductor device Feb. 5, 2013
8268712 Method of forming metal gate structure and method of forming metal gate transistor Sep. 18, 2012
8114739 Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same Feb. 14, 2012
8105956 Methods of forming silicon oxides and methods of forming interlevel dielectrics Jan. 31, 2012
8021990 Gate structure and method Sep. 20, 2011
7884032 Thin film deposition Feb. 8, 2011
7872312 Semiconductor device comprising a high dielectric constant insulating film including nitrogen Jan. 18, 2011
7825040 Method for depositing flowable material using alkoxysilane or aminosilane precursor Nov. 2, 2010
7727911 Method for forming a gate insulating film Jun. 1, 2010
7682852 Method of manufacturing semiconductor laser device including light shield plate Mar. 23, 2010
7556970 Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium Jul. 7, 2009
7538001 Transistor gate forming methods and integrated circuits May. 26, 2009
7514376 Manufacture of semiconductor device having nitridized insulating film Apr. 7, 2009
7476600 FET gate structure and fabrication process Jan. 13, 2009
7476627 Surface preparation prior to deposition Jan. 13, 2009
7446055 Aerosol misted deposition of low dielectric organosilicate films Nov. 4, 2008
7410910 Lanthanum aluminum oxynitride dielectric films Aug. 12, 2008
7323729 Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor Jan. 29, 2008
7160786 Silicon on insulator device and layout method of the same Jan. 9, 2007
7056835 Surface preparation prior to deposition Jun. 6, 2006
7042055 Semiconductor device and manufacturing thereof May. 9, 2006
7015121 Semiconductor device and method of manufacturing the same Mar. 21, 2006
6960537 Incorporation of nitrogen into high k dielectric film Nov. 1, 2005
6958277 Surface preparation prior to deposition Oct. 25, 2005
6953696 Method for fabricating semiconductor integrated circuit device Oct. 11, 2005
6806102 Method of fabricating semiconductor integrated circuit device Oct. 19, 2004
6787433 Semiconductor device and method of manufacturing the same Sep. 7, 2004
6749687 In situ growth of oxide and silicon layers Jun. 15, 2004
6674135 Semiconductor structure having elevated salicided source/drain regions and metal gate electrode on nitride/oxide dielectric Jan. 6, 2004
6630710 Elevated channel MOSFET Oct. 7, 2003
6624488 Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices Sep. 23, 2003
6613695 Surface preparation prior to deposition Sep. 2, 2003
6544900 In situ dielectric stacks Apr. 8, 2003
6475892 Simplified method of patterning polysilicon gate in a semiconductor device Nov. 5, 2002
6448136 Method of manufacturing flash memory Sep. 10, 2002
6410428 Nitride deposition on tungsten-polycide gate to prevent abnormal tungsten silicide oxidation Jun. 25, 2002
6391661 Semiconductor and method of fabricating May. 21, 2002
6348420 Situ dielectric stacks Feb. 19, 2002
6297114 Semiconductor device and process and apparatus of fabricating the same Oct. 2, 2001
6229155 Semiconductor and method of fabricating May. 8, 2001
6143593 Elevated channel MOSFET Nov. 7, 2000
6087249 Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation Jul. 11, 2000
6060403 Method of manufacturing semiconductor device May. 9, 2000
5998270 Formation of oxynitride and polysilicon layers in a single reaction chamber Dec. 7, 1999
5891793 Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation Apr. 6, 1999
5880500 Semiconductor device and process and apparatus of fabricating the same Mar. 9, 1999
5600165 Semiconductor device with antireflection film Feb. 4, 1997
5512500 Method of fabricating semiconductor device Apr. 30, 1996











 
 
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