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Class Information
Number: 257/E21.187
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (epo) > Schottky gate structure (epo) > For charge-coupled device (epo)
Description: This subclass is indented under subclass E21.186. This subclass is substantially the same in scope as ECLA classification H01L21/28B4K.










Patents under this class:

Patent Number Title Of Patent Date Issued
8574941 Method for manufacturing solid-state imaging device Nov. 5, 2013
8546805 Two-beam laser annealing with improved temperature performance Oct. 1, 2013
7557390 Solid image capturing element for power saving at output section and manufacturing method for the same Jul. 7, 2009
7253092 Tungsten plug corrosion prevention method using water Aug. 7, 2007











 
 
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