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Class Information
Number: 257/E21.186
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (epo) > Schottky gate structure (epo)
Description: This subclass is indented under subclass E21.176. This subclass is substantially the same in scope as ECLA classification H01L21/28B4.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.187 For charge-coupled device (epo) 4


Patents under this class:

Patent Number Title Of Patent Date Issued
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8183558 Compound semiconductor device with T-shaped gate electrode May. 22, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
7943994 Integrated PMOS transistor and Schottky diode May. 17, 2011
7928480 Semiconductor device Apr. 19, 2011
7915713 Field effect transistors with channels oriented to different crystal planes Mar. 29, 2011
7906417 Compound semiconductor device with T-shaped gate electrode and its manufacture Mar. 15, 2011
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same Sep. 8, 2009
7544593 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof Jun. 9, 2009











 
 
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