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Class Information
Number: 257/E21.185
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (epo) > Pn-homojunction gate structure (epo) > For charge-coupled device (epo)
Description: This subclass is indented under subclass E21.184. This subclass is substantially the same in scope as ECLA classification H01L21/28B3K.










Patents under this class:

Patent Number Title Of Patent Date Issued
8574941 Method for manufacturing solid-state imaging device Nov. 5, 2013
8497536 Dual-facing camera assembly Jul. 30, 2013
8354699 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors Jan. 15, 2013
8278131 Method and apparatus for dark current and blooming supression in 4T CMOS imager pixel Oct. 2, 2012
8247847 Solid-state imaging device and manufacturing method therefor Aug. 21, 2012
8114696 CMOS image sensor with asymmetric well structure of source follower Feb. 14, 2012
8021908 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel Sep. 20, 2011
7910963 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors Mar. 22, 2011
7879642 Solid-state sensor and manufacturing method thereof Feb. 1, 2011
7851798 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel Dec. 14, 2010
7816169 Colors only process to reduce package yield loss Oct. 19, 2010
7791114 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors Sep. 7, 2010
7704775 CCD type solid-state imaging apparatus and manufacturing method for the same Apr. 27, 2010
7557390 Solid image capturing element for power saving at output section and manufacturing method for the same Jul. 7, 2009
7485906 Colors only process to reduce package yield loss Feb. 3, 2009
7397075 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors Jul. 8, 2008
7393728 Method of manufacturing an array substrate of a transflective liquid crystal display Jul. 1, 2008
7326598 Method of fabricating polycrystalline silicon Feb. 5, 2008
7253092 Tungsten plug corrosion prevention method using water Aug. 7, 2007
7195989 Electrochemical fabrication methods using transfer plating of masks Mar. 27, 2007
7125740 Solid-state image pickup device and fabrication method thereof Oct. 24, 2006











 
 
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