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Browse by Category: Main > Physics
Class Information
Number: 257/E21.18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (epo) > Mos-gate structure (epo) > Gate structure with charge-trapping insulator (epo)
Description: This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2E.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8669606 Semiconductor device and method for manufacturing thereof Mar. 11, 2014
8669609 Non-volatile memory (NVM) cell for endurance and method of making Mar. 11, 2014
8624316 Nonvolatile semiconductor memory device and method of fabricating the same Jan. 7, 2014
8603878 Vertical-type semiconductor devices and methods of manufacturing the same Dec. 10, 2013
8599616 Three-dimensional NAND memory with stacked mono-crystalline channels Dec. 3, 2013
8552537 Semiconductor device and method for fabricating the same Oct. 8, 2013
8541829 Nonvolatile semiconductor memory and fabrication method for the same Sep. 24, 2013
8525252 Nonvolatile semiconductor memory device and method of fabricating the same Sep. 3, 2013
8501609 Method for generating a three-dimensional NAND memory with mono-crystalline channels using sacrificial material Aug. 6, 2013
8476126 Gate stack for high-K/metal gate last process Jul. 2, 2013
8329535 Multi-level-cell trapping DRAM Dec. 11, 2012
8318566 Method to seperate storage regions in the mirror bit device Nov. 27, 2012
8304352 Method of manufacturing a semiconductor device Nov. 6, 2012
8300448 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device Oct. 30, 2012
8268692 Non-volatile memory cell devices and methods Sep. 18, 2012
8263458 Process margin engineering in charge trapping field effect transistors Sep. 11, 2012
8258574 Semiconductor decoupling capacitor device Sep. 4, 2012
8183623 Dual charge storage node memory device and methods for fabricating such device May. 22, 2012
8183110 Memory cells, methods of forming dielectric materials, and methods of forming memory cells May. 22, 2012
8119477 Memory system with protection layer to cover the memory gate stack and methods for forming same Feb. 21, 2012
8093126 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device Jan. 10, 2012
8084810 Fabrication method and structure of semiconductor non-volatile memory device Dec. 27, 2011
8084324 Nonvolatile semiconductor memory and fabrication method for the same Dec. 27, 2011
8030166 Lateral pocket implant charge trapping devices Oct. 4, 2011
8017485 Methods of fabricating a semiconductor device Sep. 13, 2011
8003468 Separation methods for semiconductor charge accumulation layers and structures thereof Aug. 23, 2011
8003469 Method of manufacturing non-volatile semiconductor devices Aug. 23, 2011
7999305 Semiconductor device Aug. 16, 2011
7985649 Method of making a semiconductor structure useful in making a split gate non-volatile memory cell Jul. 26, 2011
7972951 Memory device etch methods Jul. 5, 2011
7968406 Memory cells, methods of forming dielectric materials, and methods of forming memory cells Jun. 28, 2011
7955935 Non-volatile memory cell devices and methods Jun. 7, 2011
7955933 Method of manufacturing nonvolatile semiconductor memory device Jun. 7, 2011
7943998 Nonvolatile memory devices having stacked structures and methods of fabricating the same May. 17, 2011
7932125 Self-aligned charge storage region formation for semiconductor device Apr. 26, 2011
7928503 Memory cells Apr. 19, 2011
7915123 Dual charge storage node memory device and methods for fabricating such device Mar. 29, 2011
7910407 Quad memory cell and method of making same Mar. 22, 2011
7897470 Non-volatile memory cell device and methods Mar. 1, 2011
7888218 Using thick spacer for bitline implant then remove Feb. 15, 2011
7888219 Methods of forming charge-trap type non-volatile memory devices Feb. 15, 2011
7883967 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device Feb. 8, 2011
7880219 Nonvolatile charge trap memory device having <100> crystal plane channel orientation Feb. 1, 2011
7872296 Semiconductor memory device Jan. 18, 2011
7863134 Nonvolatile semiconductor storage device and manufacturing method thereof Jan. 4, 2011
7863672 Non-volatile memory device and method of fabricating the same Jan. 4, 2011
7859066 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 28, 2010
7838923 Lateral pocket implant charge trapping devices Nov. 23, 2010
7829445 Method of manufacturing a flash memory device Nov. 9, 2010
7754553 Charge trapping memory device with two separated non-conductive charge trapping inserts and method for making the same Jul. 13, 2010

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