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Class Information
Number: 257/E21.179
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (epo) > Mos-gate structure (epo) > Floating or plural gate structure (epo)
Description: This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2D.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8679918 Multiple-gate device with floating back gate Mar. 25, 2014
8673716 Memory manufacturing process with bitline isolation Mar. 18, 2014
8664059 Non-volatile memory device formed by dual floating gate deposit Mar. 4, 2014
8647940 Semiconductor memory device including multi-layer gate structure Feb. 11, 2014
8614473 Flash memory with recessed floating gate Dec. 24, 2013
8587036 Non-volatile memory and fabricating method thereof Nov. 19, 2013
8580662 Manufacture method of a split gate nonvolatile memory cell Nov. 12, 2013
8546217 Flash memory and method for forming the same Oct. 1, 2013
8541273 Dielectric stack Sep. 24, 2013
8507340 Method of fabricating a nonvolatile memory Aug. 13, 2013
8492210 Transistor, semiconductor device comprising the transistor and method for manufacturing the same Jul. 23, 2013
8482050 Flash memory with recessed floating gate Jul. 9, 2013
8466507 Semiconductor device and a method of manufacturing the same Jun. 18, 2013
8450174 Non-volatile storage having a connected source and well May. 28, 2013
8450783 Semiconductor device May. 28, 2013
8426263 Patterning a gate stack of a non-volatile memory (NVM) with formation of a metal-oxide-semiconductor field effect transistor (MOSFET) Apr. 23, 2013
8426270 Memory device with a textured lowered electrode Apr. 23, 2013
8426272 Non-volatile memory devices including shared bit lines and methods of fabricating the same Apr. 23, 2013
RE44156 Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage Apr. 16, 2013
8420482 Nonvolatile memory device and method of forming the same Apr. 16, 2013
8409951 Metal control gate formation in non-volatile storage Apr. 2, 2013
8404535 Metal gate transistor and method for fabricating the same Mar. 26, 2013
8405138 Densely-packed films of lanthanide oxide nanoparticles via electrophoretic deposition Mar. 26, 2013
8395201 Nonvolatile semiconductor memory device Mar. 12, 2013
8395203 Semiconductor device and a manufacturing method thereof Mar. 12, 2013
8390050 Semiconductor device and method of manufacturing the same Mar. 5, 2013
8390051 Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines Mar. 5, 2013
8383476 EEPROM cell Feb. 26, 2013
8383475 EEPROM cell Feb. 26, 2013
8372707 Methods of forming non-volatile memory Feb. 12, 2013
8357605 Methods of fabricating semiconductor memory devices Jan. 22, 2013
8338244 Methods of fabricating three-dimensional nonvolatile memory devices using expansions Dec. 25, 2012
8329530 Method and system for providing contact to a first polysilicon layer in a flash memory device Dec. 11, 2012
8330204 Non-volatile NAND memory semiconductor integrated circuit Dec. 11, 2012
8304307 Method of fabricating different gate oxides for different transistors in an integrated circuit Nov. 6, 2012
8298890 Charge blocking layers for nonvolatile memories Oct. 30, 2012
8288228 Semiconductor devices and methods of fabricating the same Oct. 16, 2012
8283703 Solid state Klystron Oct. 9, 2012
8283224 Ammonia pre-treatment in the fabrication of a memory cell Oct. 9, 2012
8278203 Metal control gate formation in non-volatile storage Oct. 2, 2012
8241974 Nonvolatile memory device with multiple blocking layers and method of fabricating the same Aug. 14, 2012
8217442 Semiconductor device and method of manufacturing the same Jul. 10, 2012
8211777 Method of manufacturing nonvolatile semiconductor device Jul. 3, 2012
8212305 Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance Jul. 3, 2012
8202774 Semiconductor memory device including multi-layer gate structure Jun. 19, 2012
8198666 Semiconductor device including a nonvolatile memory element having first, second and third insulating films Jun. 12, 2012
8193056 Method of manufacturing semiconductor device Jun. 5, 2012
8193052 Flash memory device and method of manufacturing the same Jun. 5, 2012
8187935 Method of forming active region structure May. 29, 2012
8188532 Semiconductor device having a gate contact structure capable of reducing interfacial resistance May. 29, 2012

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