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Class Information
Number: 257/E21.178
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (epo) > Mos-gate structure (epo) > Joint-gate structure (epo)
Description: This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2C.










Patents under this class:

Patent Number Title Of Patent Date Issued
7727902 Composition for forming nitride coating film for hard mask Jun. 1, 2010
7405110 Methods of forming implant regions relative to transistor gates Jul. 29, 2008
7223641 Semiconductor device, method for manufacturing the same, liquid crystal television and EL television May. 29, 2007
7160780 Method of manufacturing a fin field effect transistor Jan. 9, 2007
7144779 Method of forming epitaxial silicon-comprising material Dec. 5, 2006











 
 
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